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Xu H, Yan H, Chen J, Zhang X, Zhang P, Li H, Meng H. Superior Hole Injection Material PEGDT/TPF/PVDF with p-Doping Capability for Highly Efficient Solution-Processed Organic Light-Emitting Diode. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39327980 DOI: 10.1021/acsami.4c11124] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
The ability to charge injection is a key factor in determining the performance of the organic light-emitting diode (OLED) devices. Improving the work function of the anode surface via interface modification, thus lowering the hole injection barrier, stands as a crucial strategy for enhancing the performance of the OLED device. Herein, we propose an innovative p-doping hole injection material, namely, PEGDT/TPF/PVDF that exhibits excellent performance in OLED devices with the value of maximum current efficiency at 56.4 Cd A-1, maximum luminescence at 25,564 Cd m-2, and a high EQE of 19.8%. The results for PEGDT/TPF/PVDF showed good conductivity, excellent film-forming property, and high transmittance over 98% in the spectrum range of 500-700 nm. Changes in the hole-injection energy barriers observed from the surface of the anode suggest a modified anode with PEGDT/TPF/PVDF deepened the work function at a value of 0.2 eV, which dramatically improves the hole-injection properties. This work not only provides novel structural materials with exceptional hole-injection properties but also proposes a promising alternative to PEDOT/PSS.
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Affiliation(s)
- Hong Xu
- School of Advanced Materials and School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
| | - Hao Yan
- School of Advanced Materials and School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
| | - Junmin Chen
- Tsinghua-Berkeley Shenzhen Institute Tsinghua University, Shenzhen 518055, Guangdong, P. R. China
- Institute of Materials Research (iMR), Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, Guangdong, P. R. China
| | - Xiaopeng Zhang
- School of Advanced Materials and School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
| | - Pengli Zhang
- School of Advanced Materials and School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
| | - Hongyang Li
- School of Advanced Materials and School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
| | - Hong Meng
- School of Advanced Materials and School of Chemical Biology and Biotechnology, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
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2
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Zhu X, Luo X, Deng Y, Wei H, Feng Peng, Ying L, Huang F, Hu Y, Jin Y. Doping bilayer hole-transport polymer strategy stabilizing solution-processed green quantum-dot light-emitting diodes. SCIENCE ADVANCES 2024; 10:eado0614. [PMID: 39151002 PMCID: PMC11328901 DOI: 10.1126/sciadv.ado0614] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Accepted: 07/11/2024] [Indexed: 08/18/2024]
Abstract
Quantum-dot light-emitting diodes (QLEDs) are solution-processed electroluminescence devices with great potential as energy-saving, large-area, and low-cost display and lighting technologies. Ideally, the organic hole-transport layers (HTLs) in QLEDs should simultaneously deliver efficient hole injection and transport, effective electron blocking, and robust electrochemical stability. However, it is still challenging for a single HTL to fulfill all these stringent criteria. Here, we demonstrate a general design of doping-bilayer polymer-HTL architecture for stabilizing high-efficiency QLEDs. We show that the bilayer HTLs combining the electrochemical-stable polymer and the electron-blocking polymer unexpectedly increase the hole injection barrier. We mitigated the problem by p-doping of the underlying sublayer of the bilayer HTLs. Consequently, green QLEDs with an unprecedented maximum luminance of 1,340,000 cd m-2 and a record-long operational lifetime (T95 lifetime at an initial luminance of 1000 cd m-2 is 17,700 hours) were achieved. The universality of the strategy is examined in various polymer-HTL systems, providing a general route toward high-performance solution-processed QLEDs.
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Affiliation(s)
- Xitong Zhu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Xiao Luo
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yunzhou Deng
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Huan Wei
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Feng Peng
- Dongguan Volt-Amp Optoelectronics Technology Co. Ltd., Dongguan 523808, China
| | - Lei Ying
- Dongguan Volt-Amp Optoelectronics Technology Co. Ltd., Dongguan 523808, China
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Fei Huang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yizheng Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
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3
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Baustert KN, Bombile JH, Rahman MT, Yusuf AO, Li R, Huckaba AJ, Risko C, Graham KR. Combination of Counterion Size and Doping Concentration Determines the Electronic and Thermoelectric Properties of Semiconducting Polymers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313863. [PMID: 38687901 DOI: 10.1002/adma.202313863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 04/19/2024] [Indexed: 05/02/2024]
Abstract
In both chemical and electrochemical doping of organic semiconductors (OSCs), a counterion, either from the electrolyte or ionized dopant, balances the charge introduced to the OSC. Despite the large influence of this counterion on OSC optical and electronic response, there remains substantial debate on how a fundamental parameter, ion size, impacts these properties. This work resolves much of this debate by accounting for two doping regimes. In the low-doping regime, the Coulomb binding energies between charge carriers on the OSC and the counterions are significant, and larger counterions lead to decreased Coulomb interactions, more delocalized charge carriers, and higher electrical conductivities. In the high-doping regime, the Coulomb binding energies become negligible due to the increased dielectric constant of the films and a smoothing of the energy landscape; thereby, the electrical conductivities depend primarily on the extent of morphological disorder in the OSC. Moreover, in regioregular poly(3-hexylthiophene), rr-P3HT, smaller counterions lead to greater bipolaron concentrations in the low-doping regime due to the increased Coulomb interactions. Emphasizing the impact of the counterion size, it is shown that larger counterions can lead to increased thermoelectric power factors for rr-P3HT.
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Affiliation(s)
- Kyle N Baustert
- Department of Chemistry, University of Kentucky, Lexington, KY, 40506, USA
| | - Joel H Bombile
- Department of Chemistry, and Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Md Tawabur Rahman
- Department of Chemistry, University of Kentucky, Lexington, KY, 40506, USA
| | - Augustine O Yusuf
- Department of Chemistry, University of Kentucky, Lexington, KY, 40506, USA
| | - Ruipeng Li
- Brookhaven National Laboratory, Upton, NY, 11937, USA
| | - Aron J Huckaba
- Department of Chemistry, University of Kentucky, Lexington, KY, 40506, USA
| | - Chad Risko
- Department of Chemistry, and Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Kenneth R Graham
- Department of Chemistry, University of Kentucky, Lexington, KY, 40506, USA
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4
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Wang S, Zhu W, Jacobs IE, Wood WA, Wang Z, Manikandan S, Andreasen JW, Un HI, Ursel S, Peralta S, Guan S, Grivel JC, Longuemart S, Sirringhaus H. Enhancing the Thermoelectric Properties of Conjugated Polymers by Suppressing Dopant-Induced Disorder. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314062. [PMID: 38558210 DOI: 10.1002/adma.202314062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Revised: 03/17/2024] [Indexed: 04/04/2024]
Abstract
Doping is a crucial strategy to enhance the performance of various organic electronic devices. However, in many cases, the random distribution of dopants in conjugated polymers leads to the disruption of the polymer microstructure, severely constraining the achievable performance of electronic devices. Here, it is shown that by ion-exchange doping polythiophene-based P[(3HT)1-x-stat-(T)x] (x = 0 (P1), 0.12 (P2), 0.24 (P3), and 0.36 (P4)), remarkably high electrical conductivity of >400 S cm-1 and power factor of >16 µW m-1 K-2 are achieved for the random copolymer P3, ranking it among highest ever reported for unaligned P3HT-based films, significantly higher than that of P1 (<40 S cm-1, <4 µW m-1 K-2). Although both polymers exhibit comparable field-effect transistor hole mobilities of ≈0.1 cm2 V-1 s-1 in the pristine state, after doping, Hall effect measurements indicate that P3 exhibits a large Hall mobility up to 1.2 cm2 V-1 s-1, significantly outperforming that of P1 (0.06 cm2 V-1 s-1). GIWAXS measurement determines that the in-plane π-π stacking distance of doped P3 is 3.44 Å, distinctly shorter than that of doped P1 (3.68 Å). These findings contribute to resolving the long-standing dopant-induced-disorder issues in P3HT and serve as an example for achieving fast charge transport in highly doped polymers for efficient electronics.
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Affiliation(s)
- Suhao Wang
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France
| | - Wenjin Zhu
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Ian E Jacobs
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - William A Wood
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Zichen Wang
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Suraj Manikandan
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Jens Wenzel Andreasen
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Hio-Ieng Un
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Sarah Ursel
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Sébastien Peralta
- Laboratoire de Physicochimie des Polymères et des Interfaces, CY Cergy Paris Université, 5 Mail Gay Lussac, Neuville-sur-Oise, 95000, France
| | - Shaoliang Guan
- Maxwell Centre, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Jean-Claude Grivel
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Stéphane Longuemart
- Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France
| | - Henning Sirringhaus
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
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5
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Guo J, Chen PA, Yang S, Wei H, Liu Y, Xia J, Chen C, Chen H, Wang S, Li W, Hu Y. Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance. SMALL METHODS 2024:e2400084. [PMID: 38738733 DOI: 10.1002/smtd.202400084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Revised: 04/21/2024] [Indexed: 05/14/2024]
Abstract
Doping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, the critical role of dopants is underscored in shaping the morphology and structure of OSC films, which in turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) and N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA-TPFB), are examined for their doping effects on poly(3-hexylthiophene) (P3HT) and PBBT-2T host OSCs. It is found that although TrTPFB exhibits higher doping efficiency, OSCs doped with DMA-TPFB achieve comparable or even enhanced electrical conductivity. Indeed, the electrical conductivity of DMA-TPFB-doped P3HT reaches over 67 S cm-1, which is a record-high value for mixed-solution-doped P3HT. This can be attributed to DMA-TPFB inducing a higher degree of crystallinity and reduced structural disorder. Moreover, the beneficial impact of DMA-TPFB on the OSC films' morphology and structure results in superior thermoelectric performance in the doped OSCs. These findings highlight the significance of dopant-induced morphological and structural considerations in enhancing the film characteristics of OSCs, opening up a new avenue for optimization of dopant performance.
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Affiliation(s)
- Jing Guo
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan, 031000, China
| | - Ping-An Chen
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Shuzhang Yang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Huan Wei
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yu Liu
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiangnan Xia
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Chen Chen
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Huajie Chen
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan, 411105, China
| | - Suhao Wang
- Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM), Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
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6
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Dong CD, Bauch F, Hu Y, Schumacher S. Charge transfer in superbase n-type doping of PCBM induced by deprotonation. Phys Chem Chem Phys 2024; 26:4194-4199. [PMID: 38230526 DOI: 10.1039/d3cp05105f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
N-type electronic doping of organic semiconductors (OSCs) by using superbase compounds shows high doping efficiency (H. Wei, Z. Cheng, T. Wu, Y. Liu, J. Guo, P.-A. Chen, J. Xia, H. Xie, X. Qiu, T. Liu, B. Zhang, J. Hui, Z. Zeng, Y. Bai and Y. Hu, Adv. Mater. 2023, 35, 2300084). While a deprotonation reaction is believed to trigger the doping process, the detailed mechanism therein is not yet fully understood. In the present work we theoretically study the electronic structure of the deprotonated Phenyl-C61-butyric acid methyl ester (PCBM) molecule, as well as the charge transfer (CT) between PCBM and its deprotonated species. We find that deprotonated PCBM without formation of a new bond between the deprotonated side chain and fullerene induces electronic structure with broken spin symmetry, where an in-gap state is singly occupied by an unpaired electron. A second scenario that we find to be possible is the formation of a new bond between the deprotonated side chain and a fullerene. This leads to a spin symmetric electronic structure with partially localized in-gap state, which is expected to contribute less to the effective doping. These results show that the deprotonated PCBM species without new bond formation predominantly accounts for the effective n-type doping of PCBM, an insight that will be useful for optimization of this recently discovered doping method.
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Affiliation(s)
- Chuan-Ding Dong
- Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University, Warburger Strasse 100, Paderborn 33098, Germany.
| | - Fabian Bauch
- Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University, Warburger Strasse 100, Paderborn 33098, Germany.
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Stefan Schumacher
- Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University, Warburger Strasse 100, Paderborn 33098, Germany.
- Wyant College of Optical Sciences, University of Arizona, Tucson, AZ 85721, USA
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Wei H, Cheng Z, Wu T, Liu Y, Guo J, Chen PA, Xia J, Xie H, Qiu X, Liu T, Zhang B, Hui J, Zeng Z, Bai Y, Hu Y. Novel Organic Superbase Dopants for Ultraefficient N-Doping of Organic Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300084. [PMID: 36929089 DOI: 10.1002/adma.202300084] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/13/2023] [Indexed: 06/02/2023]
Abstract
Doping is a powerful technique for engineering the electrical properties of organic semiconductors (OSCs), yet efficient n-doping of OSCs remains a central challenge. Herein, the discovery of two organic superbase dopants, namely P2-t-Bu and P4-t-Bu as ultra-efficient n-dopants for OSCs is reported. Typical n-type semiconductors such as N2200 and PC61 BM are shown to experience a significant increase of conductivity upon doping by the two dopants. In particular, the optimized electrical conductivity of P2-t-Bu-doped PC61 BM reaches a record-high value of 2.64 S cm-1 . The polaron generation efficiency of P2-t-Bu-doped in PC61 BM is found to be over 35%, which is 2-3 times higher than that of benchmark n-dopant N-DMBI. In addition, a deprotonation-initiated, nucleophilic-attack-based n-doping mechanism is proposed for the organic superbases, which involves the deprotonation of OSC molecules, the nucleophilic attack of the resulting carbanions on the OSC's π-bonds, and the subsequent n-doping through single electron transfer process between the anionized and neutral OSCs. This work highlights organic superbases as promising n-dopants for OSCs and opens up opportunities to explore and develop highly efficient n-dopants.
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Affiliation(s)
- Huan Wei
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Zehong Cheng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Tong Wu
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yu Liu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jing Guo
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Ping-An Chen
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiangnan Xia
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Haihong Xie
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xincan Qiu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Tingting Liu
- College of Energy, Soochow University, 688 Moye Road, Suzhou, Jiangsu, 215123, China
| | - Bohan Zhang
- Key Laboratory of Natural Medicine and Immune Engineering, Henan University, 85 Minglun Street, Kaifeng, Henan, 475004, China
| | - Jingshu Hui
- College of Energy, Soochow University, 688 Moye Road, Suzhou, Jiangsu, 215123, China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yugang Bai
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
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8
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Chen PA, Guo J, Yan X, Liu Y, Wei H, Qiu X, Xia J, Guo J, Ding J, Gong Z, Chen C, Lei T, Chen H, Zeng Z, Hu Y. A Methodology of Fabricating Novel Electrodes for Semiconductor Devices: Doping and Van der Waals Integrating Organic Semiconductor Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2207858. [PMID: 36949014 DOI: 10.1002/smll.202207858] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 03/03/2023] [Indexed: 06/18/2023]
Abstract
Electrodes are indispensable components in semiconductor devices, and now are mainly made from metals, which are convenient for use but not ideal for emerging technologies such as bioelectronics, flexible electronics, or transparent electronics. Here the methodology of fabricating novel electrodes for semiconductor devices using organic semiconductors (OSCs) is proposed and demonstrated. It is shown that polymer semiconductors can be heavily p- or n-doped to achieve sufficiently high conductivity for electrodes. In contrast with metals, the doped OSC films (DOSCFs) are solution-processable, mechanically flexible, and have interesting optoelectronic properties. By integrating the DOSCFs with semiconductors through van der Waals contacts different kinds of semiconductor devices can be constructed. Importantly, these devices exhibit higher performance than their counterparts with metal electrodes, and/or excellent mechanical or optical properties that are unavailable in metal-electrode devices, suggesting the superiority of DOSCF electrodes. Given the existing large amount of OSCs, the established methodology can provide abundant electrode choices to meet the demand of various emerging devices.
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Affiliation(s)
- Ping-An Chen
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China
| | - Junjun Guo
- Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, P. R. China
| | - Xinwen Yan
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yu Liu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China
| | - Huan Wei
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China
| | - Xincan Qiu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China
| | - Jiangnan Xia
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China
| | - Jing Guo
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Jiaqi Ding
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Zhenqi Gong
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Chen Chen
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, P. R. China
| | - Ting Lei
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Huajie Chen
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan, 411105, P. R. China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China
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