Thermoelectric Silver-Based Chalcogenides

A low-temperature thermoelectric transport study of non-stoichiometric AgSbTe2

In recent times, considerable attention has been given to examining the impact of micro/nanostructure on the thermoelectric characteristics of nonstoichiometric AgSbTe2. The present investigation employed direct melting of elements that produced p-type AgSbTe2 with spontaneous nanostructuring due to cation ordering. The product predominantly features an Ag-deficient Ag0.927Sb1.07Te2.005 phase with monoclinic Ag2Te nanoprecipitates and exhibits a degenerate semiconductor-like behavior with an energy band gap of 0.15 eV. A Seebeck coefficient of 251 μV K-1 and a power factor of 741 μW m-1 K-2 at near ambient temperature are attained with this composition. The variable range hopping (VRH) and linear magnetoresistance (LMR) confirmed that the low-temperature transport followed a VRH between the localized states. The composition also exhibited glass like thermal conductivity of 0.2 W m-1 K-1 arising from phonon scattering at all-scale hierarchical structures that led to a high ZT of 1.1 at room temperature. The direct melted ingots show a high relative density of ∼97%, Vickers hardness Hv of ∼108.5 kgf mm-2, and excellent thermal stability, making them an attractive choice for TEGs.

Observation of giant room-temperature anisotropic magnetoresistance in the topological insulator β-Ag2Te

Achieving room-temperature high anisotropic magnetoresistance ratios is highly desirable for magnetic sensors with scaled supply voltages and high sensitivities. However, the ratios in heterojunction-free thin films are currently limited to only a few percent at room temperature. Here, we observe a high anisotropic magnetoresistance ratio of -39% and a giant planar Hall effect (520 μΩ⋅cm) at room temperature under 9 T in β-Ag2Te crystals grown by chemical vapor deposition. We propose a theoretical model of anisotropic scattering - induced by a Dirac cone tilt and modulated by intrinsic properties of effective mass and sound velocity - as a possible origin. Moreover, small-size angle sensors with a Wheatstone bridge configuration were fabricated using the synthesized β-Ag2Te crystals. The sensors exhibited high output response (240 mV/V), high angle sensitivity (4.2 mV/V/°) and small angle error (<1°). Our work translates the developments in topological insulators to a broader impact on practical applications such as high-field magnetic and angle sensors.

Cation-Disorder Engineering Promotes Efficient Charge-Carrier Transport in AgBiS2 Nanocrystal Films

Efficient charge-carrier transport is critical to the success of emergent semiconductors in photovoltaic applications. So far, disorder has been considered detrimental for charge-carrier transport, lowering mobilities, and causing fast recombination. This work demonstrates that, when properly engineered, cation disorder in a multinary chalcogenide semiconductor can considerably enhance the charge-carrier mobility and extend the charge-carrier lifetime. Here, the properties of AgBiS2 nanocrystals (NCs) are explored as a function of Ag and Bi cation-ordering, which can be modified via thermal-annealing. Local Ag-rich and Bi-rich domains formed during hot-injection synthesis are transformed to induce homogeneous disorder (random Ag-Bi distribution). Such cation-disorder engineering results in a sixfold increase in the charge-carrier mobility, reaching ≈2.7 cm2 V-1 s-1 in AgBiS2 NC thin films. It is further demonstrated that homogeneous cation disorder reduces charge-carrier localization, a hallmark of charge-carrier transport recently observed in silver-bismuth semiconductors. This work proposes that cation-disorder engineering flattens the disordered electronic landscape, removing tail states that would otherwise exacerbate Anderson localization of small polaronic states. Together, these findings unravel how cation-disorder engineering in multinary semiconductors can enhance the efficiency of renewable energy applications.

Flexible Ag-S-Te System with Promising Room-Temperature Thermoelectric Performance

Silver chalcogenides demonstrate great potential as flexible thermoelectric materials due to their excellent ductility and tunable electrical and thermal transport properties. In this work, we report that the amorphous/crystalline phase ratio and thermoelectric properties of the Ag₂S_xTe_1-x (x = 0.55-0.75) samples can be modified by altering the S content. The room-temperature power factor of the Ag₂S_0.55Te_0.45 sample is 4.9 μW cm^-1 K^-2, and a higher power factor can be achieved by decreasing the carrier concentration as predicted by the single parabolic band model. The addition of a small amount of excessive Te into Ag₂S_0.55Te_0.45 (Ag₂S_0.55Te_0.45+y) not only enhances the power factor by decreasing the carrier concentration but also reduces the total thermal conductivity due to decreased electronic thermal conductivity. Owing to the effectively optimized carrier concentration, the thermoelectric power factor and dimensionless figure of merit zT of the sample with y = 0.007 reaches, respectively, 6.2 μW cm^-1 K^-2 and 0.39, while the excellent plastic deformability is well maintained, demonstrating its promising potential as a flexible thermoelectric material at room temperature.

Advances in Cellulose-Based Composites for Energy Applications

The various forms of cellulose-based materials possess high mechanical and thermal stabilities, as well as three-dimensional open network structures with high aspect ratios capable of incorporating other materials to produce composites for a wide range of applications. Being the most prevalent natural biopolymer on the Earth, cellulose has been used as a renewable replacement for many plastic and metal substrates, in order to diminish pollutant residues in the environment. As a result, the design and development of green technological applications of cellulose and its derivatives has become a key principle of ecological sustainability. Recently, cellulose-based mesoporous structures, flexible thin films, fibers, and three-dimensional networks have been developed for use as substrates in which conductive materials can be loaded for a wide range of energy conversion and energy conservation applications. The present article provides an overview of the recent advancements in the preparation of cellulose-based composites synthesized by combining metal/semiconductor nanoparticles, organic polymers, and metal-organic frameworks with cellulose. To begin, a brief review of cellulosic materials is given, with emphasis on their properties and processing methods. Further sections focus on the integration of cellulose-based flexible substrates or three-dimensional structures into energy conversion devices, such as photovoltaic solar cells, triboelectric generators, piezoelectric generators, thermoelectric generators, as well as sensors. The review also highlights the uses of cellulose-based composites in the separators, electrolytes, binders, and electrodes of energy conservation devices such as lithium-ion batteries. Moreover, the use of cellulose-based electrodes in water splitting for hydrogen generation is discussed. In the final section, we propose the underlying challenges and outlook for the field of cellulose-based composite materials.

Copper-Based Diamond-like Thermoelectric Compounds: Looking Back and Stepping Forward

The research on thermoelectric (TE) materials has a long history. Holding the advantages of high elemental abundance, lead-free and easily tunable transport properties, copper-based diamond-like (CBDL) thermoelectric compounds have attracted extensive attention from the thermoelectric community. The CBDL compounds contain a large number of representative candidates for thermoelectric applications, such as CuInGa₂, Cu₂GeSe₃, Cu₃SbSe₄, Cu₁₂SbSe₁₃, etc. In this study, the structure characteristics and TE performances of typical CBDLs were briefly summarized. Several common synthesis technologies and effective strategies to improve the thermoelectric performances of CBDL compounds were introduced. In addition, the latest developments in thermoelectric devices based on CBDL compounds were discussed. Further developments and prospects for exploring high-performance copper-based diamond-like thermoelectric materials and devices were also presented at the end.