The nature of non-FRET photoluminescence quenching in nanoassemblies from semiconductor quantum dots and dye molecules

Nanoassemblies formed via self-assembly based on colloidal CdSe quantum dots (QDs) and porphyrin (H2P) dye molecules show Fluorescence Resonant Energy Transfer (FRET) and non-FRET quenching of QD photoluminescence (PL). We present a procedure to unravel and quantify these two relaxation pathways via dynamic and static PL quenching experiments. Accordingly, FRET amounts at maximum to 10% of the total quenching efficiency. Since the degree of ligand coverage is inhomogeneously distributed across the QD ensemble PL quantum yields vary broadly. The attachment of H2P molecules occurs preferentially to those QDs with low ligand coverage. Along with that, nanoassembly formation deviates strongly from Poisson statistics. Like FRET, non-FRET depends on the QD size. We assign non-FRET quenching to the formation of specific new Cd2+ trap states following depletion of several ligands by the spacious dye molecules. While FRET follows quantitatively the Förster model, non-FRET appears on time scales of 1-3 ns in new and enhanced non-radiative near-band-edge QD PL decay channels caused by a trapping of the electrons in long-lived intra-gap states which then manifests itself in a subsequent weak PL emission. We assign the related intra-band emission to a recombination of deep-trap electrons and shallow-trap holes.

Size-Dependent Non-FRET Photoluminescence Quenching in Nanocomposites Based on Semiconductor Quantum Dots CdSe/ZnS and Functionalized Porphyrin Ligands

We review recent experimental work to utilize the size dependence of the luminescence quenching of colloidal semiconductor quantum dots induced by functionalized porphyrin molecules attached to the surface to describe a photoluminescence (PL) quenching process which is different from usual models of charge transfer (CT) or Foerster resonant energy transfer (FRET). Steady-state and picosecond time-resolved measurements were carried out for nanocomposites based on colloidal CdSe/ZnS and CdSe quantum dots (QDs) of various sizes and surfacely attached tetra-mesopyridyl-substituted porphyrin molecules (“Quantum Dot-Porphyrin” nanocomposites), in toluene at 295 K. It was found that the major part of the observed strong quenching of QD PL in “QD-Porphyrin” nanocomposites can neither be assigned to FRET nor to photoinduced charge transfer between the QD and the chromophore. This PL quenching depends on QD size and shell and is stronger for smaller quantum dots: QD PL quenching rate constants scale inversely with the QD diameter. Based on the comparison of experimental data and quantum mechanical calculations, it has been concluded that QD PL quenching in “QD-Porphyrin” nanocomposites can be understood in terms of a tunneling of the electron (of the excited electron-hole pair) followed by a (self-) localization of the electron or formation of trap states. The major contribution to PL quenching is found to be proportional to the calculated quantum-confined exciton wave function at the QD surface. Our findings highlight that single functionalized molecules can be considered as one of the probes for the complex interface physics and dynamics of colloidal semiconductor QD.

FRET and ligand related NON-FRET processes in single quantum dot-perylene bisimide assemblies

Nanoassemblies are formed via self-assembly of ZnS capped CdSe quantum dots (QD) and perylene bisimide dyes (PBI). Upon assembly formation with functionalized dye molecules the QD photoluminescence (PL) is quenched. Quenching has been assigned partly to FRET (fluorescence resonance energy transfer) and NON-FRET processes. By means of time resolved single particle spectroscopy of immobilized QD-dye assemblies, it is demonstrated that NON-FRET processes are due to new non-radiative decay channels caused by the assembly formation process itself. Immobilized (single) assemblies exhibit the same processes as ensembles of assemblies in toluene solution. Only one dye molecule on a QD quenches the PL up to 50%, which is much stronger than is expected when replacing a volume related number of ligands. NON-FRET processes are distinct from photoinduced charge and/or energy transfer. A combination of a Stern-Volmer and FRET analysis of ensemble experiments supports the investigation of the dynamics of assembly formation at extremely low concentration ratios of PBI to QD. This allows us to distinguish between the effects of PBI and ligands on PL quenching on a single molecule level which is not possible in conventional ligand dynamic experiments.

Identification of different donor-acceptor structures via Förster Resonance Energy Transfer (FRET) in quantum-dot-perylene bisimide assemblies

Nanoassemblies are formed via self-assembly of ZnS capped CdSe quantum dots (QD) and perylene bisimide (PBI) dyes. Upon assembly formation the QD photoluminescence is quenched, as can be detected both via single particle detection and ensemble experiments in solution. Quenching has been assigned to FRET and NON-FRET processes. Analysis of FRET allows for a distinction between different geometries of the QD dye assemblies. Time-resolved single molecule spectroscopy reveals intrinsic fluctuations of the PBI fluorescence lifetime and spectrum, caused by rearrangement of the phenoxy side groups. The distribution of such molecular conformations and their changed dynamics upon assembly formation are discussed in the scope of FRET efficiency and surface ligand density.