Exploiting Two‐Dimensional Bi 2 O 2 Se for Trace Oxygen Detection

Multielement 2D layered material photodetectors

The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi₂O₂X (X = S, Se, Te), EuMTe₃(M = Bi, Sb), Nb₂XTe₄(X = Si, Ge), Ta₂NiX₅(X = S, Se), M₂PdX₆(M = Ta, Nb; X = S, Se), PbSnS₂), moderate-bandgap ME2DLMs (including CuIn₇Se₁₁, CuTaS₃, GaGeTe, TlMX₂(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX₃(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP₂X₆(A = Cu, Ag; B = In, Bi; X = S, Se), Ga₂In₄S₉), as well as topological ME2DLMs (MIrTe₄(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.

Controlled Growth of Large-Sized and Phase-Selectivity 2D GaTe Crystals

GaTe has recently attracted significant interest due to its direct bandgap and unique phase structure, which makes it a good candidate for optoelectronics. However, the controllable growth of large-sized monolayer and few-layer GaTe with tunable phase structures remains a great challenge. Here the controlled growth of large-sized GaTe with high quality, chemical uniformity, and good reproducibility is achieved through liquid-metal-assisted chemical vapor deposition method. By using liquid Ga, the rapid growth of 2D GaTe flakes with high phase-selectivity can be obtained due to its reduced reaction temperature. In addition, the method is used to synthesize many Ga-based 2D materials and their alloys, showing good universality. Raman spectra suggest that the as-grown GaTe own a relatively weak van der Waals interaction, where monoclinic GaTe displays highly-anisotropic optical properties. Furthermore, a p-n junction photodetector is fabricated using GaTe as a p-type semiconductor and 2D MoSe₂ as a typical n-type semiconductor. The GaTe/MoSe₂ heterostructure photodetector exhibits large photoresponsivity of 671.52 A W^-1 and high photo-detectivity of 1.48 × 10¹⁰ Jones under illumination, owing to the enhanced light absorption and good quality of as-grown GaTe. These results indicate that 2D GaTe is a promising candidate for electronic and photoelectronic devices.

Surface Functionalized Sensors for Humidity-Independent Gas Detection

Semiconducting metal oxides (SMOXs) are used widely for gas sensors. However, the effect of ambient humidity on the baseline and sensitivity of the chemiresistors is still a largely unsolved problem, reducing sensor accuracy and causing complications for sensor calibrations. Presented here is a general strategy to overcome water-sensitivity issues by coating SMOXs with a hydrophobic polymer separated by a metal-organic framework (MOF) layer that preserves the SMOX surface and serves a gas-selective function. Sensor devices using these nanoparticles display near-constant responses even when humidity is varied across a wide range [0-90 % relative humidity (RH)]. Furthermore, the sensor delivers notable performance below 20 % RH whereas other water-resistance strategies typically fail. Selectivity enhancement and humidity-independent sensitivity are concomitantly achieved using this approach. The reported tandem coating strategy is expected to be relevant for a wide range of SMOXs, leading to a new generation of gas sensors with excellent humidity-resistant performance.