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Lanzetta L, Webb T, Marin-Beloqui JM, Macdonald TJ, Haque SA. Halide Chemistry in Tin Perovskite Optoelectronics: Bottlenecks and Opportunities. Angew Chem Int Ed Engl 2023; 62:e202213966. [PMID: 36369761 PMCID: PMC10107305 DOI: 10.1002/anie.202213966] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 11/07/2022] [Accepted: 11/07/2022] [Indexed: 11/13/2022]
Abstract
Tin halide perovskites (Sn HaPs) are the top lead-free choice for perovskite optoelectronics, but the oxidation of perovskite Sn2+ to Sn4+ remains a key challenge. However, the role of inconspicuous chemical processes remains underexplored. Specifically, the halide component in Sn HaPs (typically iodide) has been shown to play a key role in dictating device performance and stability due to its high reactivity. Here we describe the impact of native halide chemistry on Sn HaPs. Specifically, molecular halogen formation in Sn HaPs and its influence on degradation is reviewed, emphasising the benefits of iodide substitution for improving stability. Next, the ecological impact of halide products of Sn HaP degradation and its mitigation are considered. The development of visible Sn HaP emitters via halide tuning is also summarised. Lastly, halide defect management and interfacial engineering for Sn HaP devices are discussed. These insights will inspire efficient and robust Sn HaP optoelectronics.
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Affiliation(s)
- Luis Lanzetta
- Physical Science and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Thomas Webb
- Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, W12 0BZ, UK
| | - Jose Manuel Marin-Beloqui
- Department of Physical Chemistry, University of Málaga, Andalucia-Tech Campus de Teatinos s/n, 29071, Málaga, Spain
| | - Thomas J Macdonald
- Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, W12 0BZ, UK.,School of Engineering and Materials Science, Queen Mary University of London, London, E1 4NS, UK
| | - Saif A Haque
- Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, W12 0BZ, UK
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Yu D, Wei Q, Li H, Xie J, Jiang X, Pan T, Wang H, Pan M, Zhou W, Liu W, Chow PCY, Ning Z. Quasi-2D Bilayer Surface Passivation for High Efficiency Narrow Bandgap Perovskite Solar Cells. Angew Chem Int Ed Engl 2022; 61:e202202346. [PMID: 35233881 DOI: 10.1002/anie.202202346] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Indexed: 11/10/2022]
Abstract
The combination of comprehensive surface passivation and effective interface carriers transfer plays a critical role in high-performance perovskite solar cells. A 2D structure is an important approach for surface passivation of perovskite film, however, its large band gap could compromise carrier transfer. Herein, we synthesize a new molecule 2-thiopheneethylamine thiocyanate (TEASCN) for the construction of bilayer quasi-2D structure precisely on a tin-lead mixed perovskite surface. This bilayer structure can passivate the perovskite surface and ensure effective carriers transfer simultaneously. As a result, the open-circuit voltage (Voc ) of the device is increased without sacrificing short-circuit current density (Jsc ), giving rise to a high certified efficiency from a credible third-party certification of narrow band gap perovskite solar cells. Furthermore, theoretical simulation indicates that the inclusion of TEASCN makes the bilayer structure thermodynamically more stable, which provides a strategy to tailor the number of layers of quasi-2D perovskite structures.
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Affiliation(s)
- Danni Yu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Qi Wei
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Hansheng Li
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Junhan Xie
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Xianyuan Jiang
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Ting Pan
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Hao Wang
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Mengling Pan
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Wenjia Zhou
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Weimin Liu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
| | - Philip C Y Chow
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, 999077, China
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai, 201210, China
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Yu D, Wei Q, Li H, Xie J, Jiang X, Pan T, Wang H, Pan M, Zhou W, Liu W, Chow PCY, Ning Z. Quasi‐2D Bilayer Surface Passivation for High Efficiency Narrow Bandgap Perovskite Solar Cells. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202202346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Danni Yu
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Qi Wei
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Hansheng Li
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Junhan Xie
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Xianyuan Jiang
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Ting Pan
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Hao Wang
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Mengling Pan
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Wenjia Zhou
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Weimin Liu
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
| | - Philip C. Y. Chow
- Department of Mechanical Engineering The University of Hong Kong Pokfulam, Hong Kong 999077 China
| | - Zhijun Ning
- School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
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