Application of Perovskite Quantum Dots as an Absorber in Perovskite Solar Cells

Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications

Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.

Kinetic analysis of the growth behavior of perovskite CsPbBr3 nanocrystals in a microfluidic system

Understanding the growth behavior of nanoparticles and semiconductor nanocrystals under dynamic environments is of profound importance in controlling the sizes and uniformity of the prepared nanoparticles and semiconductor nanocrystals. In this work, we develop a relation between the bandgap (the photoluminescence peak wavelength) of semiconductor nanocrystals and the total flow rate for the synthesis of semiconductor nanocrystals in microfluidic systems under the framework of the quantum confinement effect without the contribution of Coulomb interaction. Using this relation, we analyze the growth behavior of CsPbBr₃ nanocrystals synthesized in a microfluidic system by an antisolvent method in the temperature range of 303 to 363 K. The results demonstrate that the square of the average size of the CsPbBr₃ nanocrystals is inversely proportional to the total flow rate and support the developed relation. The activation energy for the rate process controlling the growth of the CsPbBr₃ nanocrystals in the microfluidic system is 2.05 kJ mol^-1. Increasing the synthesis temperature widens the size distribution of the CsPbBr₃ NCs prepared in the microfluidic system. The method developed in this work provides a simple approach to use photoluminescent characteristics to in situ monitor and analyze the growth of semiconductor nanocrystals under dynamic environments.

A Real-Time In Situ Demonstration of Direct and Indirect Transformation Pathways in CdTe Magic-Size Clusters at Room Temperature

The transformations of colloidal semiconductor magic-size clusters (MSCs) are expected to occur with only discrete, step-wise redshifts in optical absorption. Here, we challenge this assumption presenting a novel, conceptually different transformation, for which the redshift is continuous. In the room-temperature transformation from CdTe MSC-448 to MSC-488 (designated by the peak wavelengths in nanometer), the redshift of absorption monitored in situ displays distinctly continuous and/or step-wise behavior. Based on conclusive evidence provided by real-time experiments, the former transformation is apparently direct and intra-cluster with a relatively large energy barrier. The latter transformation is indirect and assisted by MSC precursor compounds (PCs). The former transformation follows the latter often, being predominant at a relatively high temperature. The present findings encourage a reconsideration of the absorption redshift reported previously for transformations of binary II-VI MSCs, together with the pathway associated without the increase of cluster mass.