Unwrapping Core-Shell Nanowires into Nanoribbon-Based Superstructures

Diversely Doped Uniform Silicon Nanotube Axial Heterostructures Enabled by "Dopant Reflection"

Here, we propose a novel method for the synthesis of extremely uniform, diversely doped silicon nanotube heterostructures. The method, comprising a simple two-step synthesis, exploits the use of a Ge nanowire sacrificial core upon which a multidoping axial pattern can be easily obtained, that is enclosed in an intrinsic Si shell. The Ge-Si core-shell structure is then heated to 750 °C, allowing the migration of dopant elements from the Ge core directly into the Si shell. Removal of the Ge core, via either wet or dry etch, does not impair the crystallinity of the Si shell nor its electrical characteristics, allowing for the formation of a multidoped axially patterned, conformal, and uniform Si nanotube. The precise dopant patterning allows for the extension of Si nanotube applications, which were unattainable because of the inability to precisely control the parameters and uniformity of the nanotubes while doping the structure simultaneously.

Multicolor Spectral-Specific Silicon Nanodetectors based on Molecularly Embedded Nanowires

Silicon-based photodetectors cannot distinguish between different wavelengths. Therefore, these detectors relay on color-specific filters to achieve color separation. Color filters add complexity to color sensitive device fabrication, and hinder miniaturization of such devices. Here, we report an ultrasmall (as small as ∼20 nm by 300 nm), red-green-blue-violet (RGBV) filter-free spectrally gated field effect transistor (SGFET) detectors. These photodetectors are based on organic-silicon nanowire hybrid FET devices, capable of detecting specific visible wavelength spectrum with full width at half-maxima (fwhm) under 100 nm. Each SGFET is controlled by a distinctive RGBV spectral range, according to its specific organic fluorophore functionalization. The spectral-specific RGBV detection is accomplished via covalent attachment of different fluorophores. The fluorophore molecules inject electrons into the nanowire structure as a result of light absorption at the appropriate RGBV spectral range. These photoinduced electrons modify the occupancies of the oxide's surface states, shifting the device threshold voltage, thus changing its conductivity, and functioning as a negative stress bias in a p-type SiNW FETs. A positive biasing can be achieved via UV light-induced ionization, which leads to detrapping and translocation of electrons at the oxide layer. Furthermore, a novel theoretical model on the mechanism of action of these devices was developed. Also, we show that suspended SGFETs can function as nonvolatile memory elements, which unlike fast-relaxing on-surface SGFETs, can store discrete "on" (RGBV illumination) and "off" (UV illumination) states for several days at ambient conditions. We also demonstrate a unique single-nanowire multicolor photodetector, enabling in principle a broad spectral detection over a single silicon nanowire element. These highly compact, spectral-controlled nanodevices have the potential to serve in various future novel optoelectric applications.

Stepwise Formation of Photoconductive Nanotubes through a New Top-Down Method

In contrast to the widely used bottom-up strategy for preparing various complex nanostructures, the top-down strategy is rarely applied to generate complex nanostructures. This study reports the use of a unique combination of bottom-up and top-down processes for the time-resolved stepwise fabrication of novel photoconductive nanotubes from elaborately designed asymmetric perylene diimide molecules.