1
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Cui J, Xie C, Hu W, Luo H, Mei Q, Li S, Xu W, Gao Z, Wu J, Zhang Q, Tang X, Tan G. Two-Dimensional-Like Phonons in Three-Dimensional-Structured Rhombohedral GeSe-Based Compounds with Excellent Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2024; 16:39656-39663. [PMID: 39031122 DOI: 10.1021/acsami.4c08186] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/22/2024]
Abstract
The coupling of charge and phonon transport in solids is a long-standing issue for thermoelectric performance enhancement. Herein, two new narrow-gap semiconductors with the same chemical formula of GeSe0.65Te0.35 (GST) are rationally designed and synthesized: one with a layered hexagonal structure (H-GST) and the other with a non-layered rhombohedral structure (R-GST). Thanks to the three-dimensional (3D) network structure, R-GST possesses a significantly larger weighted mobility than H-GST. Surprisingly, 3D-structured R-GST displays an extremely low lattice thermal conductivity of ∼0.5 W m-1 K-1 at 523 K, which is comparable to that of layered H-GST. The two-dimensional (2D)-like phonon transport in R-GST stems from the unique off-centering Ge atoms that induce ferroelectric instability, yielding soft polar phonons, as demonstrated by the Boson peak detected by the low-temperature specific heat and calculated phonon spectra. Furthermore, 1 mol % doping of Sb is utilized to successfully suppress the undesired phase transition of R-GST toward H-GST at elevated temperatures. Consequently, a peak ZT of 1.1 at 623 K is attained in the rhombohedral Ge0.99Sb0.01Se0.65Te0.35 sample, which is 1 order of magnitude larger than that of GeSe. This work demonstrates the feasibility of exploring high-performance thermoelectric materials with decoupled charge and phonon transport in off-centering compounds.
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Affiliation(s)
- Jingjing Cui
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Chenghao Xie
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Weiwei Hu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Hao Luo
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Qicai Mei
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Songlin Li
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Weibin Xu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Zhibin Gao
- State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
| | - Gangjian Tan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China
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2
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Dong J, Liu Y, Li Z, Xie H, Jiang Y, Wang H, Tan XY, Suwardi A, Zhou X, Li JF, Wolverton C, Dravid VP, Yan Q, Kanatzidis MG. High Thermoelectric Performance in Rhombohedral GeSe-LiBiTe 2. J Am Chem Soc 2024; 146:17355-17364. [PMID: 38870542 DOI: 10.1021/jacs.4c04453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
GeSe, an analogue of SnSe, shows promise in exhibiting exceptional thermoelectric performance in the Pnma phase. The constraints on its dopability, however, pose challenges in attaining optimal carrier concentrations and improving ZT values. This study demonstrates a crystal structure evolution strategy for achieving highly doped samples and promising ZTs in GeSe via LiBiTe2 alloying. A rhombohedral phase (R3m) can be stabilized in the GeSe-LiBiTe2 system, further evolving into a cubic (Fm3̅m) phase with a rising temperature. The band structures of GeSe-LiBiTe2 in the rhombohedral and cubic phases feature a similar multiple-valley energy-converged valence band of L and Σ bands. The observed high carrier concentration (∼1020 cm-3) reflects the effective convergence of these bands, enabling a high density-of-states effective mass and an enhanced power factor. Moreover, a very low lattice thermal conductivity of 0.6-0.5 W m-1 K-1 from 300 to 723 K is achieved in 0.9GeSe-0.1LiBiTe2, approaching the amorphous limit value. This remarkably low lattice thermal conductivity is related to phonon scattering from point defects, planar vacancies, and ferroelectric instability-induced low-energy Einstein oscillators. Finally, a maximum ZT value of 1.1 to 1.3 at 723 K is obtained, with a high average ZT value of over 0.8 (400-723 K) in 0.9GeSe-0.1LiBiTe2 samples. This study establishes a viable route for tailoring crystal structures to significantly improve the performance of GeSe-related compounds.
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Affiliation(s)
- Jinfeng Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yukun Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Zhi Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Hongyao Xie
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yilin Jiang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Honghui Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing 401331, China
| | - Xian Yi Tan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Ady Suwardi
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong SAR, China
| | - Xiaoyuan Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing 401331, China
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Christopher Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Qingyu Yan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
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3
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Yao W, Zhang Y, Lyu T, Huang W, Huang N, Li X, Zhang C, Liu F, Wuttig M, Yu Y, Hong M, Hu L. Two-step phase manipulation by tailoring chemical bonds results in high-performance GeSe thermoelectrics. Innovation (N Y) 2023; 4:100522. [PMID: 37915362 PMCID: PMC10616397 DOI: 10.1016/j.xinn.2023.100522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Accepted: 10/03/2023] [Indexed: 11/03/2023] Open
Abstract
In thermoelectrics, phase engineering serves a crucial function in determining the power factor by affecting the band degeneracy. However, for low-symmetry compounds, the mainstream one-step phase manipulation strategy, depending solely on the valley or orbital degeneracy, is inadequate to attain a high density-of-states effective mass and exceptional zT. Here, we employ a distinctive two-step phase manipulation strategy through stepwise tailoring chemical bonds in GeSe. Initially, we amplify the valley degeneracy via CdTe alloying, which elevates the crystal symmetry from a covalently bonded orthorhombic to a metavalently bonded rhombohedral phase by significantly suppressing the Peierls distortion. Subsequently, we incorporate Pb to trigger the convergence of multivalence bands and further enhance the density-of-states effective mass by moderately restraining the Peierls distortion. Additionally, the atypical metavalent bonding in rhombohedral GeSe enables a high Ge vacancy concentration and a small band effective mass, leading to increased carrier concentration and mobility. This weak chemical bond along with strong lattice anharmonicity also reduces lattice thermal conductivity. Consequently, this unique property ensemble contributes to an outstanding zT of 0.9 at 773 K for Ge0.80Pb0.20Se(CdTe)0.25. This work underscores the pivotal role of the two-step phase manipulation by stepwise tailoring of chemical bonds in improving the thermoelectric performance of p-bonded chalcogenides.
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Affiliation(s)
- Wenqing Yao
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yihua Zhang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tu Lyu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Weibo Huang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Nuoxian Huang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Xiang Li
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Chaohua Zhang
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Fusheng Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Matthias Wuttig
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
- PGI 10 (Green IT), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Yuan Yu
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Min Hong
- Center for Future Materials and School of Engineering, University of Southern Queensland, Springfield Central, QLD 4300, Australia
| | - Lipeng Hu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
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4
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Yu Y, Zhou C, Ghosh T, Schön CF, Zhou Y, Wahl S, Raghuwanshi M, Kerres P, Bellin C, Shukla A, Cojocaru-Mirédin O, Wuttig M. Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300893. [PMID: 36920476 DOI: 10.1002/adma.202300893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2023] [Revised: 02/25/2023] [Indexed: 05/12/2023]
Abstract
Doping is usually the first step to tailor thermoelectrics. It enables precise control of the charge-carrier concentration and concomitant transport properties. Doping should also turn GeSe, which features an intrinsically a low carrier concentration, into a competitive thermoelectric. Yet, elemental doping fails to improve the carrier concentration. In contrast, alloying with Ag-V-VI2 compounds causes a remarkable enhancement of thermoelectric performance. This advance is closely related to a transition in the bonding mechanism, as evidenced by sudden changes in the optical dielectric constant ε∞ , the Born effective charge, the maximum of the optical absorption ε2 (ω), and the bond-breaking behavior. These property changes are indicative of the formation of metavalent bonding (MVB), leading to an octahedral-like atomic arrangement. MVB is accompanied by a thermoelectric-favorable band structure featuring anisotropic bands with small effective masses and a large degeneracy. A quantum-mechanical map, which distinguishes different types of chemical bonding, reveals that orthorhombic GeSe employs covalent bonding, while rhombohedral and cubic GeSe utilize MVB. The transition from covalent to MVB goes along with a pronounced improvement in thermoelectric performance. The failure or success of different dopants can be explained by this concept, which redefines doping rules and provides a "treasure map" to tailor p-bonded chalcogenides.
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Affiliation(s)
- Yuan Yu
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Chongjian Zhou
- State Key Laboratory of Solidification Processing, and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Tanmoy Ghosh
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Carl-Friedrich Schön
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Yiming Zhou
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Sophia Wahl
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Mohit Raghuwanshi
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Peter Kerres
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
- PGI 10 (Green IT), Forschungszentrum Jülich GmbH, 52428, Jülich, Germany
| | - Christophe Bellin
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Université, UMR CNRS 7590, MNHN, 4 Place Jussieu, Paris, F-75005, France
| | - Abhay Shukla
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Université, UMR CNRS 7590, MNHN, 4 Place Jussieu, Paris, F-75005, France
| | - Oana Cojocaru-Mirédin
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
| | - Matthias Wuttig
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074, Aachen, Germany
- PGI 10 (Green IT), Forschungszentrum Jülich GmbH, 52428, Jülich, Germany
- Jülich - Aachen Research Alliance (JARA-FIT and JARA-HPC), RWTH Aachen University, 52056, Aachen, Germany
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5
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Huang Y, Zhi S, Zhang S, Yao W, Ao W, Zhang C, Liu F, Li J, Hu L. Regulating the Configurational Entropy to Improve the Thermoelectric Properties of (GeTe) 1-x(MnZnCdTe 3) x Alloys. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6798. [PMID: 36234135 PMCID: PMC9572701 DOI: 10.3390/ma15196798] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/11/2022] [Revised: 09/11/2022] [Accepted: 09/27/2022] [Indexed: 06/16/2023]
Abstract
In thermoelectrics, entropy engineering as an emerging paradigm-shifting strategy can simultaneously enhance the crystal symmetry, increase the solubility limit of specific elements, and reduce the lattice thermal conductivity. However, the severe lattice distortion in high-entropy materials blocks the carrier transport and hence results in an extremely low carrier mobility. Herein, the design principle for selecting alloying species is introduced as an effective strategy to compensate for the deterioration of carrier mobility in GeTe-based alloys. It demonstrates that high configurational entropy via progressive MnZnCdTe3 and Sb co-alloying can promote the rhombohedral-cubic phase transition temperature toward room temperature, which thus contributes to the enhanced density-of-states effective mass. Combined with the reduced carrier concentration via the suppressed Ge vacancies by high-entropy effect and Sb donor doping, a large Seebeck coefficient is attained. Meanwhile, the severe lattice distortions and micron-sized Zn0.6Cd0.4Te precipitations restrain the lattice thermal conductivity approaching to the theoretical minimum value. Finally, the maximum zT of Ge0.82Sb0.08Te0.90(MnZnCdTe3)0.10 reaches 1.24 at 723 K via the trade-off between the degraded carrier mobility and the improved Seebeck coefficient, as well as the depressed lattice thermal conductivity. These results provide a reference for the implementation of entropy engineering in GeTe and other thermoelectric materials.
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Affiliation(s)
- Yilun Huang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Shizhen Zhi
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Shengnan Zhang
- Superconducting Materials Research Center, Northwest Institute for Nonferrous Metal Research, Xi’an 710016, China
| | - Wenqing Yao
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Weiqin Ao
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Chaohua Zhang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Fusheng Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Junqin Li
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Lipeng Hu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
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6
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Jang H, Toriyama MY, Abbey S, Frimpong B, Male JP, Snyder GJ, Jung YS, Oh MW. Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe 2 -SnSe Thermoelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204132. [PMID: 35944565 DOI: 10.1002/adma.202204132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Revised: 07/02/2022] [Indexed: 06/15/2023]
Abstract
Cation disordering is commonly found in multinary cubic compounds, but its effect on electronic properties has been neglected because of difficulties in determining the ordered structure and defect energetics. An absence of rational understanding of the point defects present has led to poor reproducibility and uncontrolled conduction type. AgBiSe2 is a representative compound that suffers from poor reproducibility of thermoelectric properties, while the origins of its intrinsic n-type conductivity remain speculative. Here, it is demonstrated that cation disordering is facilitated by BiAg charged antisite defects in cubic AgBiSe2 which also act as a principal donor defect that greatly controls the electronic properties. Using density functional theory calculations and in situ Raman spectroscopy, how saturation annealing with selenium vapor can stabilize p-type conductivity in cubic AgBiSe2 alloyed with SnSe at high temperatures is elucidated. With stable and controlled hole concentration, a peak is observed in the weighted mobility and the density-of-states effective mass in AgBiSnSe3 , implying an increased valley degeneracy in this system. These findings corroborate the importance of considering the defect energetics for exploring the dopability of ternary thermoelectric chalcogenides and engineering electronic bands by controlling self-doping.
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Affiliation(s)
- Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Michael Y Toriyama
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Stanley Abbey
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
| | - Brakowaa Frimpong
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
| | - James P Male
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - G Jeffrey Snyder
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
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7
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Wu Y, Liang Q, Zhao X, Wu H, Zi P, Tao Q, Yu L, Su X, Wu J, Chen Z, Zhang Q, Tang X. Enhancing Thermoelectric Performance of AgSbTe 2-Based Compounds via Microstructure Modulation Combining with Entropy Engineering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3057-3065. [PMID: 34985852 DOI: 10.1021/acsami.1c21252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Modulation of the microstructure and configurational entropy tuning are the core stratagem for improving thermoelectric performance. However, the correlation of evolution among the preparation methods, chemical composition, structural defects, configurational entropy, and thermoelectric properties is still unclear. Herein, two series of AgSbTe2-based compounds were synthesized by an equilibrium melting-slow-cooling method and a nonequilibrium melting-quenching-spark plasma sintering (SPS) method, respectively. The equilibrium method results in coarse grains with a size of >300 μm in the samples and a lower defect concentration, leading to higher carrier mobility of 10.66 cm2 V-1 s-1 for (Ag2Te)0.41(Sb2Te3)0.59 compared to the sample synthesized by nonequilibrium preparation of 1.83 cm2 V-1 s-1. Moreover, tuning the chemical composition of nonstoichiometric AgSbTe2 effectively improves the configurational entropy and creates a large number of cation vacancies, which evolve into dense dislocations in the samples. Owing to all of these in conjunction with the strong inharmonic vibration of lattice, an ultralow thermal conductivity of 0.51 W m-1 K-1 at room temperature is achieved for the (Ag2Te)0.42(Sb2Te3)0.58 sample synthesized by the equilibrium preparation method. Due to the enhanced carrier mobility, optimized carrier concentration, and low thermal conductivity, the (Ag2Te)0.42(Sb2Te3)0.58 sample synthesized by the equilibrium preparation method possesses the highest ZT of 1.04 at 500 K, more than 60% higher than 0.64 at 500 K of the same composition synthesized by nonequilibrium preparation.
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Affiliation(s)
- Yutian Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Qi Liang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China
| | - Xiaodie Zhao
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Huijuan Wu
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Peng Zi
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Qirui Tao
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Lingxiao Yu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
| | - Xianli Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China
| | - Zhiquan Chen
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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8
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Yang C, Luo Y, Xia Y, Xu L, Du Z, Han Z, Li X, Cui J. Synergistic Optimization of the Electronic and Phonon Transports of N-Type Argyrodite Ag 8Sn 1-xGa xSe 6 ( x = 0-0.6) through Entropy Engineering. ACS APPLIED MATERIALS & INTERFACES 2021; 13:56329-56336. [PMID: 34784168 DOI: 10.1021/acsami.1c17548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The argyrodite compound, Ag8SnSe6 (ATS), which is one of the promising thermoelectric (TE) candidates, is receiving growing attention in thermoelectrics recently. However, its TE performance is still low and phases are unstable as the temperature varies. In this work, inspired by entropy engineering, we eliminate the β/γ phase transformation at ∼355 K via alloying Ga, thus extending its high-temperature cubic phase from 320 to 730 K. In the meantime, the power factor (PF) enhances by 10% and lattice thermal conductivity (κL) reduces by 40% at 723 K. As a result, the ZT value is boosted to ∼1.15 for Ag8Sn0.5Ga0.5Se6, which stands high among the ATS systems. This proves that the entropy engineering is an effective approach to extend the high-temperature range for the cubic γ-phase and improve its TE performance simultaneously.
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Affiliation(s)
- Chao Yang
- School of Material and Chemical Engineering, Ningbo University of Technology, Ningbo 315016, China
- School of Materials Science and Physics, School of Chemical Engineering&Technology, China University of Mining and Technology, Xuzhou 221116, China
| | - Yong Luo
- School of Materials Science and Physics, School of Chemical Engineering&Technology, China University of Mining and Technology, Xuzhou 221116, China
| | - Yafen Xia
- Commercial School, Zhejiang Fashion Institute of Technology, Ningbo 315211, China
| | - Liangliang Xu
- Multidisciplinary Computational Laboratory, Department of Electrical and Biomedical Engineering, Hanyang University, Seoul 04763, South Korea
| | - Zhengliang Du
- School of Material and Chemical Engineering, Ningbo University of Technology, Ningbo 315016, China
| | - Zhongkang Han
- Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, Moscow 413026, Russia
| | - Xie Li
- School of Material and Chemical Engineering, Ningbo University of Technology, Ningbo 315016, China
| | - Jiaolin Cui
- School of Material and Chemical Engineering, Ningbo University of Technology, Ningbo 315016, China
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9
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Li Z, Yan HJ, Liu X, Liu S, Feng M, Wang X, Yan B, Xue DJ. Surface-Defect States in Photovoltaic Absorber GeSe. J Phys Chem Lett 2021; 12:10249-10254. [PMID: 34648285 DOI: 10.1021/acs.jpclett.1c02813] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
GeSe is an emerging promising light-harvesting material for photovoltaics due to its excellent optoelectronic properties, nontoxic and earth-abundant constituents, and high stability. In particular, perovskite-like antibonding states at the valence band maximum arising from Ge-4s and Se-4p coupling enable the bulk-defect-tolerant properties in GeSe. However, a fundamental understanding of surface-defect states in GeSe, another important factor for high-performance photovoltaics, is still lacking. Here, we investigate the surface-defect properties of GeSe through first-principle calculations. We find that different from common semiconductors possessing numerous surface dangling bonds, some GeSe surfaces are prone to reconstruction, thus eliminating the dangling bonds. The rearranged armchair edges exhibit unexpected benign defect properties, similar to those of bulk GeSe, arising from the formation of bulk-like [GeSe3] tetrahedrons. We further show that the stable exposed (111) surfaces are hard to reconstruct due to the stiff structure but are effectively passivated by the addition of H.
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Affiliation(s)
- Zongbao Li
- School of Material and Chemical Engineering, Institute of Cultural and Technological Industry Innovation of Tongren, Tongren University, Tongren 554300, China
| | - Hui-Juan Yan
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Xinsheng Liu
- Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China
| | - Shunchang Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Mingjie Feng
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450002, China
| | - Xia Wang
- School of Material and Chemical Engineering, Institute of Cultural and Technological Industry Innovation of Tongren, Tongren University, Tongren 554300, China
| | - Bin Yan
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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10
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Sarkar D, Roychowdhury S, Arora R, Ghosh T, Vasdev A, Joseph B, Sheet G, Waghmare UV, Biswas K. Metavalent Bonding in GeSe Leads to High Thermoelectric Performance. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202101283] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Debattam Sarkar
- New Chemistry Unit Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Subhajit Roychowdhury
- New Chemistry Unit Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Raagya Arora
- Theoretical Sciences Unit Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Tanmoy Ghosh
- New Chemistry Unit Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Aastha Vasdev
- Department of Physical Sciences Indian Institute of Science Education and Research Mohali Sector 81, S. A. S. Nagar Manauli, P.O. 140306 India
| | - Boby Joseph
- Elettra Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park Basovizza 34149 Trieste Italy
| | - Goutam Sheet
- Department of Physical Sciences Indian Institute of Science Education and Research Mohali Sector 81, S. A. S. Nagar Manauli, P.O. 140306 India
| | - Umesh V. Waghmare
- Theoretical Sciences Unit Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
- International Centre for Materials Science and School of Advanced Materials Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Kanishka Biswas
- New Chemistry Unit Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
- International Centre for Materials Science and School of Advanced Materials Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
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11
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Sarkar D, Roychowdhury S, Arora R, Ghosh T, Vasdev A, Joseph B, Sheet G, Waghmare UV, Biswas K. Metavalent Bonding in GeSe Leads to High Thermoelectric Performance. Angew Chem Int Ed Engl 2021; 60:10350-10358. [PMID: 33619797 DOI: 10.1002/anie.202101283] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2021] [Indexed: 11/11/2022]
Abstract
Orthorhombic GeSe is a promising thermoelectric material. However, large band gap and strong covalent bonding result in a low thermoelectric figure of merit, zT≈0.2. Here, we demonstrate a maximum zT≈1.35 at 627 K in p-type polycrystalline rhombohedral (GeSe)0.9 (AgBiTe2 )0.1 , which is the highest value reported among GeSe based materials. The rhombohedral phase is stable in ambient conditions for x=0.8-0.29 in (GeSe)1-x (AgBiTe2 )x . The structural transformation accompanies change from covalent bonding in orthorhombic GeSe to metavalent bonding in rhombohedral (GeSe)1-x (AgBiTe2 )x . (GeSe)0.9 (AgBiTe2 )0.1 has closely lying primary and secondary valence bands (within 0.25-0.30 eV), which results in high power factor 12.8 μW cm-1 K-2 at 627 K. It also exhibits intrinsically low lattice thermal conductivity (0.38 Wm-1 K-1 at 578 K). Theoretical phonon dispersion calculations reveal vicinity of a ferroelectric instability, with large anomalous Born effective charges and high optical dielectric constant, which, in concurrence with high effective coordination number, low band gap and moderate electrical conductivity, corroborate metavalent bonding in (GeSe)0.9 (AgBiTe2 )0.1 . We confirmed the presence of low energy phonon modes and local ferroelectric domains using heat capacity measurement (3-30 K) and switching spectroscopy in piezoresponse force microscopy, respectively.
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Affiliation(s)
- Debattam Sarkar
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Subhajit Roychowdhury
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Raagya Arora
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Tanmoy Ghosh
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Aastha Vasdev
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, P.O., 140306, India
| | - Boby Joseph
- Elettra Sincrotrone, Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, Basovizza, 34149 Trieste, Italy
| | - Goutam Sheet
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, P.O., 140306, India
| | - Umesh V Waghmare
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India.,International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India.,International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
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12
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Wu Y, Su X, Yang D, Zhang Q, Tang X. Boosting Thermoelectric Properties of AgBi 3(Se yS 1-y) 5 Solid Solution via Entropy Engineering. ACS APPLIED MATERIALS & INTERFACES 2021; 13:4185-4191. [PMID: 33433997 DOI: 10.1021/acsami.0c19387] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
AgBi3S5 is an environmentally friendly n-type thermoelectric material composed of earth-abundant and nontoxic elements. It has a complex monoclinic structure with distorted NaCl-type fragments, which provide its intrinsically low thermal conductivity. However, poor electrical properties limit its overall performance. Configurational entropy engineering is an effective method to enhance thermoelectric properties. With the increase of configurational entropy, phonon point defect scattering is amplified, yielding lower lattice thermal conductivity, while the structure symmetry can also be improved, which leads to the enhanced electrical transport property. In this study, we combine carrier modulation and entropy engineering, utilizing melting-annealing and spark plasma sintering, to synthesize a series of AgBi3(SeyS1-y)5.08 bulks. Se substitution effectively increases the configurational entropy and thus dramatically decreases the thermal conductivity. Moreover, anion deficiency modulation effectively optimizes the carrier concentration and the electrical transport properties. Due to a power factor of 2.7 μW/(cm·K2) and a low thermal conductivity of 0.45 W/(m·K) at 723 K, the AgBi3(Se0.9S0.1)5.08 sample possesses the highest ZT of 0.42 at 723 K, nearly double the value of AgBi3S5.08 or pristine AgBi3S5. Our work demonstrates that apart from carrier optimization, entropy engineering opens a new avenue for enhancing the thermoelectric properties of a given material.
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Affiliation(s)
- Yutian Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xianli Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Dongwang Yang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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13
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Wang Z, Wu H, Xi M, Zhu H, Dai L, Xiong Q, Wang G, Han G, Lu X, Zhou X, Wang G. Structure-Dependent Thermoelectric Properties of GeSe 1-xTe x (0 ≤ x ≤ 0.5). ACS APPLIED MATERIALS & INTERFACES 2020; 12:41381-41389. [PMID: 32812735 DOI: 10.1021/acsami.0c10850] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
GeSe was theoretically predicted to have thermoelectric (TE) performance as high as SnSe. However, the relatively high TE performance was not achieved experimentally in doped GeSe samples with an original orthorhombic structure but observed in Ag(Sb,Bi)(Se,Te)2 alloyed samples that crystalize in either a rhombohedral or cubic structure. Herein, to clarify the crystal structure-dependent properties, the electrical and thermal transport properties of GeSe1-xTex (0 ≤ x ≤ 0.5), where orthorhombic, hexagonal, and rhombohedral phases are stable at room temperature for different Te content, have been studied, without any intentional manipulation on carrier concentration. It is found that the three phases show intrinsically different hole concentrations: ∼1016 cm-3 for the orthorhombic phase but as high as 1021 cm-3 for the hexagonal and rhombohedral phases. Ge-rich status in the orthorhombic phase and Ge-poor status in hexagonal and rhombohedral phases may be responsible for the huge difference in hole concentrations. The rhombohedral phase shows a much higher Seebeck coefficient than the hexagonal phase with similar hole concentration, indicating that the profile of valance band maximum for the rhombohedral structure is more favorable for high TE performance than the hexagonal phase in GeSe1-xTex. The highest zT of 0.69 has been obtained in GeSe0.55Te0.45 at 778 K, at which temperature the rhombohedral phase has already transformed to a cubic phase; however, a zT value of 1.74 at 628 K is predicted by the quality factor analysis for rhombohedral GeSe0.55Te0.45 if optimum hole concentration can be achieved.
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Affiliation(s)
- Zhiran Wang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, P. R. China
- University of Chinese Academy of Sciences, Beijing 100044, P. R. China
| | - Hong Wu
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Ming Xi
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Huaxing Zhu
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Lu Dai
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, P. R. China
- University of Chinese Academy of Sciences, Beijing 100044, P. R. China
| | - Qihong Xiong
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Guiwen Wang
- Analytical and Testing Center, Chongqing University, Chongqing 401331, P. R. China
| | - Guang Han
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, P. R. China
| | - Xu Lu
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Xiaoyuan Zhou
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
- Analytical and Testing Center, Chongqing University, Chongqing 401331, P. R. China
| | - Guoyu Wang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, P. R. China
- University of Chinese Academy of Sciences, Beijing 100044, P. R. China
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14
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Sarkar D, Ghosh T, Roychowdhury S, Arora R, Sajan S, Sheet G, Waghmare UV, Biswas K. Ferroelectric Instability Induced Ultralow Thermal Conductivity and High Thermoelectric Performance in Rhombohedral p-Type GeSe Crystal. J Am Chem Soc 2020; 142:12237-12244. [DOI: 10.1021/jacs.0c03696] [Citation(s) in RCA: 45] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Affiliation(s)
| | | | | | | | - Sandra Sajan
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli 140306, India
| | - Goutam Sheet
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli 140306, India
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15
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Yuan K, Sun Z, Zhang X, Gong X, Tang D. A first-principles study of the thermoelectric properties of rhombohedral GeSe. Phys Chem Chem Phys 2020; 22:1911-1922. [PMID: 31912827 DOI: 10.1039/c9cp05153h] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Manipulation of crystal symmetry is an important strategy to tune the thermoelectric performance. High-symmetry thermoelectric materials benefit from high band degeneracy. With first-principles calculations and Boltzmann transport theory, we systematically investigate the electronic and phononic transport properties of rhombohedral GeSe with higher symmetry. At optimized carrier concentrations, the maximum power factors are found to be 5.86 mW m-1 K-2 for the p-type and 4.45 mW m-1 K-2 for the n-type, respectively. The high p-type power factor originates from the highly degenerated L and Σ bands and small energy offset between them, while the n-type one results from the weak electron-phonon coupling. More importantly, rhombohedral GeSe possesses anisotropic and low lattice thermal conductivities of 3.58 W m-1 K-1 and 1.96 W m-1 K-1 at room temperature in the intralayer and interlayer directions, respectively, which is associated with the giant phonon anharmonicity driven by the resonant bonding. Combining the high power factor and low thermal conductivity, the predicted ZT values for p-type and n-type doping can reach 2.02 and 2.37 at 800 K. This study offers insights into the thermal and charge transport properties in rhombohedral GeSe, and demonstrates that both p-type and n-type GeSe are potential high-performance thermoelectric materials.
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Affiliation(s)
- Kunpeng Yuan
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China.
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16
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Chandra S, Biswas K. Realization of High Thermoelectric Figure of Merit in Solution Synthesized 2D SnSe Nanoplates via Ge Alloying. J Am Chem Soc 2019; 141:6141-6145. [PMID: 30946576 DOI: 10.1021/jacs.9b01396] [Citation(s) in RCA: 53] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Recently single crystals of layered SnSe have created a paramount importance in thermoelectrics owing to their ultralow lattice thermal conductivity and high thermoelectric figure of merit ( zT). However, nanocrystalline or polycrystalline SnSe offers a wide range of thermoelectric applications for the ease of its synthesis and machinability. Here, we demonstrate high zT of ∼2.1 at 873 K in two-dimensional nanoplates of Ge-doped SnSe synthesized by a simple hydrothermal route followed by spark plasma sintering (SPS). Anisotropic measurements also show a high zT of ∼1.75 at 873 K parallel to the SPS pressing direction. Ge doping (3 mol %) in SnSe nanoplates significantly enhances the p-type carrier concentration, which results in high electrical conductivity and power factor of ∼5.10 μW/cm K2 at 873 K. High lattice anharmonicity, nanoscale grain boundaries, and Ge precipitates in the SnSe matrix synergistically give rise to the ultralow lattice thermal conductivity of ∼0.18 W/mK at 873 K.
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Affiliation(s)
- Sushmita Chandra
- New Chemistry Unit, School of Advanced Materials and International Centre of Materials Science , Jawaharlal Nehru Centre for Advanced Scientific Research , Jakkur P.O., Bangalore 560064 , India
| | - Kanishka Biswas
- New Chemistry Unit, School of Advanced Materials and International Centre of Materials Science , Jawaharlal Nehru Centre for Advanced Scientific Research , Jakkur P.O., Bangalore 560064 , India
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17
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Roychowdhury S, Ghosh T, Arora R, Waghmare UV, Biswas K. Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe
2
: Ultralow Thermal Conductivity and Promising Thermoelectric Performance. Angew Chem Int Ed Engl 2018. [DOI: 10.1002/ange.201809841] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Subhajit Roychowdhury
- New Chemistry Unit and School of Advanced MaterialsJawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore India
| | - Tanmoy Ghosh
- New Chemistry Unit and School of Advanced MaterialsJawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore India
| | - Raagya Arora
- Theoretical Science Unit and School of Advanced MaterialsJawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore India
| | - Umesh V. Waghmare
- Theoretical Science Unit and School of Advanced MaterialsJawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore India
| | - Kanishka Biswas
- New Chemistry Unit and School of Advanced MaterialsJawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore India
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18
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Roychowdhury S, Ghosh T, Arora R, Waghmare UV, Biswas K. Stabilizing n-Type Cubic GeSe by Entropy-Driven Alloying of AgBiSe 2 : Ultralow Thermal Conductivity and Promising Thermoelectric Performance. Angew Chem Int Ed Engl 2018; 57:15167-15171. [PMID: 30225858 DOI: 10.1002/anie.201809841] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2018] [Indexed: 11/09/2022]
Abstract
The realization of n-type Ge chalcogenides is elusive owing to intrinsic Ge vacancies that make them p-type semiconductors. GeSe crystallizes into a layered orthorhombic structure similar to SnSe at ambient conditions. The high-symmetry cubic phase of GeSe is predicted to be stabilized by applying 7 GPa external pressure or by enhancing the entropy by increasing to temperature to 920 K. Stabilization of the n-type cubic phase of GeSe at ambient conditions was achieved by alloying with AgBiSe2 (30-50 mol %), enhancing the entropy through solid solution mixing. The interplay of positive and negative chemical pressure anomalously changes the band gap of GeSe with increasing the AgBiSe2 concentration. The band gap of n-type cubic (GeSe)1-x (AgBiSe2 )x (0.30≤x≤0.50) has a value in the 0.3-0.4 eV range, which is significantly lower than orthorhombic GeSe (1.1 eV). Cubic (GeSe)1-x (AgBiSe2 )x exhibits an ultralow lattice thermal conductivity (κL ≈0.43 W m-1 K-1 ) in the 300-723 K range. The low κL is attributed to significant phonon scattering by entropy-driven enhanced solid-solution point defects.
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Affiliation(s)
- Subhajit Roychowdhury
- New Chemistry Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Tanmoy Ghosh
- New Chemistry Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Raagya Arora
- Theoretical Science Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Umesh V Waghmare
- Theoretical Science Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Kanishka Biswas
- New Chemistry Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
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19
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Roychowdhury S, Jana MK, Pan J, Guin SN, Sanyal D, Waghmare UV, Biswas K. Soft Phonon Modes Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe. Angew Chem Int Ed Engl 2018; 57:4043-4047. [PMID: 29488301 DOI: 10.1002/anie.201801491] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2018] [Indexed: 11/10/2022]
Abstract
Crystalline solids with intrinsically low lattice thermal conductivity (κL ) are crucial to realizing high-performance thermoelectric (TE) materials. Herein, we show an ultralow κL of 0.35 Wm-1 K-1 in AgCuTe, which has a remarkable TE figure-of-merit, zT of 1.6 at 670 K when alloyed with 10 mol % Se. First-principles DFT calculation reveals several soft phonon modes in its room-temperature hexagonal phase, which are also evident from low-temperature heat-capacity measurement. These phonon modes, dominated by Ag vibrations, soften further with temperature giving a dynamic cation disorder and driving the superionic transition. Intrinsic factors cause an ultralow κL in the room-temperature hexagonal phase, while the dynamic disorder of Ag/Cu cations leads to reduced phonon frequencies and mean free paths in the high-temperature rocksalt phase. Despite the cation disorder at elevated temperatures, the crystalline conduits of the rigid anion sublattice give a high power factor.
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Affiliation(s)
- Subhajit Roychowdhury
- New Chemistry Unit and Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Manoj K Jana
- New Chemistry Unit and Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Jaysree Pan
- New Chemistry Unit and Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Satya N Guin
- New Chemistry Unit and Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Dirtha Sanyal
- Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata, 700064, India
| | - Umesh V Waghmare
- New Chemistry Unit and Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
| | - Kanishka Biswas
- New Chemistry Unit and Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, India
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20
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Roychowdhury S, Jana MK, Pan J, Guin SN, Sanyal D, Waghmare UV, Biswas K. Soft Phonon Modes Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe. Angew Chem Int Ed Engl 2018. [DOI: 10.1002/ange.201801491] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Subhajit Roychowdhury
- New Chemistry Unit and Theoretical Science Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Jakkur P.O. Bangalore India
| | - Manoj K. Jana
- New Chemistry Unit and Theoretical Science Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Jakkur P.O. Bangalore India
| | - Jaysree Pan
- New Chemistry Unit and Theoretical Science Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Jakkur P.O. Bangalore India
| | - Satya N. Guin
- New Chemistry Unit and Theoretical Science Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Jakkur P.O. Bangalore India
| | - Dirtha Sanyal
- Variable Energy Cyclotron Centre; 1/AF Bidhannagar Kolkata 700064 India
| | - Umesh V. Waghmare
- New Chemistry Unit and Theoretical Science Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Jakkur P.O. Bangalore India
| | - Kanishka Biswas
- New Chemistry Unit and Theoretical Science Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Jakkur P.O. Bangalore India
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