Synthesis of Anisotropic ZnSe Nanorods with Zinc Blende Crystal Structure

Probing Twist-Induced Endocytotic Membrane Fission using Anisotropic Gold Homodimers

Membrane fission involves a crucial step of lipid remodeling, in which the dynamin collar constricts and severs the tubulated lipid membrane at the neck of budding vesicles. Nevertheless, the difficulty in accurately determining the rotational dynamics of live endocytotic vesicles poses a limit on the elucidation of dynamin-induced membrane remodeling for endocytotic vesicle scission. Herein, we designed a DNA-modified gold homodimer (AuHD)-based anisotropic plasmonic probe with uniform surface chemistry, minimizing orientational fluctuation within vesicle encapsulation. Using AuHDs as cargos to image the dynamics of cargo-containing vesicles during endocytosis, we showed that, prior to detachment from plasma membrane, the cargo-containing vesicles underwent multiple intermittent twists of ~4° angular orientation relative to plasma membrane with a ~0.2 s dwell time. These findings suggest that the membrane torques resulting from dynamin actions in vivo constitute the pathway to membrane fission, potentially shedding light on how dynamin-mediated lipid remodeling orchestrates membrane fission.

Plausible Colloidal Methods to Synthesize Semiconductor Nanowires: Deep Study From ZnSe Nanorods

When the diameter of semiconductor nanowires is below the Bohr radius, confined excitons in the radial direction can freely move along the elongated axis direction, highlighting their potential for applications in quantum information and optoelectronic devices. Controlled anisotropic growth and oriented attachment are viable strategies for producing ultra-long semiconductor nanowires with precisely controlled lengths and diameters. Anisotropic ZnSe nanorods are used as the initial seeds for the controlled anisotropic growth and oriented attachment methods. ZnSe nanorods/nanowires with limiting lengths of tens to hundreds of nanometers are produced. The advantages and limitations of semiconductor nanowires via controlled anisotropic growth and oriented attachment are summarized. The perspective for the promotion of controlled anisotropic growth and oriented attachment is discussed, which allows to promotion of the precise synthesis of semiconductor ultra-long nanowires to develop the fundamental research and applications of ultra-long semiconductor nanowires.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Anisotropic Heavy-Metal-Free Semiconductor Nanocrystals: Synthesis, Properties, and Applications

Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been explored widely due to their unique optical and electrical properties. However, the toxicity risks of heavy metals can be a drawback of heavy-metal-containing NCs in some applications. Anisotropic heavy-metal-free semiconductor NCs are desirable replacements and can be realized following the establishment of anisotropic growth mechanisms. These anisotropic heavy-metal-free semiconductor NCs can possess lower toxicity risks, while still exhibiting unique optical and electrical properties originating from both the morphological and compositional anisotropy. As a result, they are promising light-emitting materials in use various applications. In this review, we provide an overview on the syntheses, properties, and applications of anisotropic heavy-metal-free semiconductor NCs. In the first section, we discuss hazards of heavy metals and introduce the typical heavy-metal-containing and heavy-metal-free NCs. In the next section, we discuss anisotropic growth mechanisms, including solution-liquid-solid (SLS), oriented attachment, ripening, templated-assisted growth, and others. We discuss mechanisms leading both to morphological anisotropy and to compositional anisotropy. Examples of morphological anisotropy include growth of nanorods (NRs)/nanowires (NWs), nanotubes, nanoplatelets (NPLs)/nanosheets, nanocubes, and branched structures. Examples of compositional anisotropy, including heterostructures and core/shell structures, are summarized. Third, we provide insights into the properties of anisotropic heavy-metal-free NCs including optical polarization, fast electron transfer, localized surface plasmon resonances (LSPR), and so on, which originate from the NCs' anisotropic morphologies and compositions. Finally, we summarize some applications of anisotropic heavy-metal-free NCs including catalysis, solar cells, photodetectors, lighting-emitting diodes (LEDs), and biological applications. Despite the huge progress on the syntheses and applications of anisotropic heavy-metal-free NCs, some issues still exist in the novel anisotropic heavy-metal-free NCs and the corresponding energy conversion applications. Therefore, we also discuss the challenges of this field and provide possible solutions to tackle these challenges in the future.

Cation-exchange synthesis of PbSe/ZnSe hetero-nanobelts with enhanced near-infrared photoelectronic performance

To develop excellent photoelectronic and photovoltaic devices, a semiconductor with high photoelectron production efficiency and broad band absorption is urgently required. In this article, novel II-type PbSe/ZnSe hetero-nanobelts with enhanced near-infrared absorption have been synthesized via a facile strategy of a partial cation-exchange reaction and thermal treatment. Derived from ZnSe·0.5N₂H₄nanobelts as templates, the belt-like morphology was preserved. Due to the mismatch of the crystal type and parameters between PbSe and ZnSe, the formed PbSe in the form of nanoparticles were separated out and decorated on the nanobelts. Furthermore, the composition ratio of Pb/Zn can be tuned through manipulating the adding amount of Pb²⁺cations, the reaction temperature and time. The ultraviolet-visible-infrared diffuse spectra measurements suggest that the as-prepared PbSe/ZnSe hetero-nanobelts exhibited a broad band absorption from 300 to 1000 nm. In addition, they demonstrated excellent photoresponsivity in the same wavelength region and displayed a peak at approximately 840 nm. Finally, the enhanced photoelectronic sensing mechanism was discussed.

Photoelectrochemical Performance Enhancement of ZnSe Nanorods versus Dots: Combined Experimental and Computational Insights

Size- and shape-tunable colloidal semiconductor nanocrystals are among the most promising materials for photoelectrochemical water splitting. However, in-depth insights into dimension-dependent charge carrier separation and transport for colloidal semiconductor NCs are still lacking in the contemporary literature. Herein, we experimentally compared photoelectrochemical performance of heavy-metal-free ZnSe nanodots and nanorods with the same cubic structure (zinc blende), similar volumes, and similar absorption edge positions and performed density functional theory (DFT) calculations to study the correlation between the dimension and the electronic structures of ZnSe dots and rods. To eliminate the influence of the different deposition amount of NRs and NDs on each phtoanode, we quantified an average photocurrent density contribution of each single ZnSe dot and rod to be 5 × 10^-12 and 9 × 10^-12 μA·cm^-2, respectively, which highlights a significant PEC performance enhancement of 80% for rods versus dots. DFT calculations have shown that the one-dimensional morphology and crystal plane orientation (⟨111⟩) are both major factors for extremely high transition dipole moment density, which facilitate the charge carrier separation and mobility for ZnSe nanocrystals of different dimensions. This work provides useful insights into the mechanism of photoelectrochemical performance enhancement of colloidal nanocrystals and is beneficial for the design of semiconductor materials for optimal photoelectrochemical cells.

Atomic Sulfur Passivation Improves the Photoelectrochemical Performance of ZnSe Nanorods

We introduced atomic sulfur passivation to tune the surface sites of heavy metal-free ZnSe nanorods, with a Zn²⁺-rich termination surface, which are initially capped with organic ligands and under-coordinated with Se. The S²⁻ ions from a sodium sulfide solution were used to partially substitute a 3-mercaptopropionic acid ligand, and to combine with under-coordinated Zn termination atoms to form a ZnS monolayer on the ZnSe surface. This treatment removed the surface traps from the ZnSe nanorods, and passivated defects formed during the previous ligand exchange process, without sacrificing the efficient hole transfer. As a result, without using any co-catalysts, the atomic sulfur passivation increased the photocurrent density of TiO₂/ZnSe photoanodes from 273 to 325 μA/cm². Notably, without using any sacrificial agents, the photocurrent density for sulfur-passivated TiO₂/ZnSe nanorod-based photoanodes remained at almost 100% of its initial value after 300 s of continuous operation, while for the post-deposited ZnS passivation layer, or those based on ZnSe/ZnS core–shell nanorods, it declined by 28% and 25%, respectively. This work highlights the advantages of the proper passivation of II-VI semiconductor nanocrystals as an efficient approach to tackle the efficient charge transfer and stability of photoelectrochemical cells based thereon.