Exploiting Two-Dimensional Bi2 O2 Se for Trace Oxygen Detection

Molecularly specific detection towards trace nitrogen dioxide by utilizing Schottky-junction-based Gas Sensor

Trace NO2 detection is essential for the production and life, where the sensing strategy is appropriate for rapid detection but lacks molecular specificity. This investigation proposes a sensing mechanism dominated by surface-scattering to achieve the molecularly-specific detection. Two-dimensional Bi2O2Se is firstly fabricated into a Schottky-junction-based gas-sensor. Applied with an alternating excitation, the sensor simultaneously outputs multiple response signals (i.e., resistance, reactance, and the impedance angle). Their response times are shorter than 200 s at room temperature. In NO2 sensing, these responses present the detection limit in ppt range and the sensitivity is up to 16.8 %·ppb-1. This NO2 sensitivity presents orders of magnitude higher than those of the common gases within the exhaled breath. The impedance angle is involved in the principle component analysis together with the other two sensing signals. Twelve kinds of typical gases containing NO2 are acquired with molecular characteristics. The change in dipole moment of the target molecule adsorbed is demonstrated to correlate with the impedance angle via surface scattering. The proposed mechanism is confirmed to output ultra-sensitive sensing responses with the molecular characteristic.

Recent advances in bismuth oxychalcogenide nanosheets for sensing applications

This review offers insights into the fundamental properties of bismuth oxychalcogenides Bi2O2X (X = S, Se, Te) (BOXs), concentrating on recent advancements primarily from studies published over the past five years. It examines the physical characteristics of these materials, synthesis methods, and their potential as critical components for gas sensing, biosensing, and optical sensing applications. Moreover, it underscores the implications of these advancements for the development of military, environmental, and health monitoring devices.

Charge Transfer Modulation in Vanadium-Doped WS2 /Bi2 O2 Se Heterostructures

The field of photovoltaics is revolutionized in recent years by the development of two-dimensional (2D) type-II heterostructures. These heterostructures are made up of two different materials with different electronic properties, which allows for the capture of a broader spectrum of solar energy than traditional photovoltaic devices. In this study, the potential of vanadium (V)-doped WS2 is investigated, hereafter labeled V-WS2 , in combination with air-stable Bi2 O2 Se for use in high-performance photovoltaic devices. Various techniques are used to confirm the charge transfer of these heterostructures, including photoluminescence (PL) and Raman spectroscopy, along with Kelvin probe force microscopy (KPFM). The results show that the PL is quenched by 40%, 95%, and 97% for WS2 /Bi2 O2 Se, 0.4 at.% V-WS2 /Bi2 O2 Se, and 2 at.% V-WS2 /Bi2 O2 Se, respectively, indicating a superior charge transfer in V-WS2 /Bi2 O2 Se compared to pristine WS2 /Bi2 O2 Se. The exciton binding energies for WS2 /Bi2 O2 Se, 0.4 at.% V-WS2 /Bi2 O2 Se and 2 at.% V-WS2 /Bi2 O2 Se heterostructures are estimated to be ≈130, 100, and 80 meV, respectively, which is much lower than that for monolayer WS2 . These findings confirm that by incorporating V-doped WS2 , charge transfer in WS2 /Bi2 O2 Se heterostructures can be tuned, providing a novel light-harvesting technique for the development of the next generation of photovoltaic devices based on V-doped transition metal dichalcogenides (TMDCs)/Bi2 O2 Se.

Ultrafast and Low-Power 2D Bi2O2Se Memristors for Neuromorphic Computing Applications

Memristors that emulate synaptic plasticity are building blocks for opening a new era of energy-efficient neuromorphic computing architecture, which will overcome the limitation of the von Neumann bottleneck. Layered two-dimensional (2D) Bi₂O₂Se, as an emerging material for next-generation electronics, is of great significance in improving the efficiency and performance of memristive devices. Herein, high-quality Bi₂O₂Se nanosheets are grown by configuring mica substrates face-down on the Bi₂O₂Se powder. Then, bipolar Bi₂O₂Se memristors are fabricated with excellent performance including ultrafast switching speed (<5 ns) and low-power consumption (<3.02 pJ). Moreover, synaptic plasticity, such as long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP), are demonstrated in the Bi₂O₂Se memristor. Furthermore, MNIST recognition with simulated artificial neural networks (ANN) based on conductance modification could reach a high accuracy of 91%. Notably, the 2D Bi₂O₂Se enables the memristor to possess ultrafast and low-power attributes, showing great potential in neuromorphic computing applications.

Salt-Assisted Low-Temperature Growth of 2D Bi2 O2 Se with Controlled Thickness for Electronics

Bi₂ O₂ Se is the most promising 2D material due to its semiconducting feature and high mobility, making it propitious channel material for high-performance electronics that demands highly crystalline Bi₂ O₂ Se at low-growth temperature. Here, a low-temperature salt-assisted chemical vapor deposition approach for growing single-domain Bi₂ O₂ Se on a millimeter scale with thicknesses of multilayer to monolayer is presented. Because of the advantage of thickness-dependent growth, systematical scrutiny of layer-dependent Raman spectroscopy of Bi₂ O₂ Se from monolayer to bulk is investigated, revealing a redshift of the A_1g mode at 162.4 cm^-1 . Moreover, the long-term environmental stability of ≈2.4 nm thick Bi₂ O₂ Se is confirmed after exposing the sample for 1.5 years to air. The backgated field effect transistor (FET) based on a few-layered Bi₂ O₂ Se flake represents decent carrier mobility (≈287 cm²  V^-1 s^-1 ) and an ON/OFF ratio of up to 10⁷ . This report indicates a technique to grow large-domain thickness controlled Bi₂ O₂ Se single crystals for electronics.

Self-Powered and Broadband Bismuth Oxyselenide/p-Silicon Heterojunction Photodetectors with Low Dark Current and Fast Response

Inorganic nanomaterials such as graphene, black phosphorus, and transition metal dichalcogenides have attracted great interest in developing optoelectronic devices due to their efficient conversion between light and electric signals. However, the zero band gap nature, the unstable chemical properties, and the low electron mobility constrained their wide applications. Bismuth oxyselenide (Bi₂O₂Se) is gradually showing great research significance in the optoelectronic field. Here, we develop a bismuth oxyselenide/p-silicon (Bi₂O₂Se/p-Si) heterojunction and design a self-powered and broadband Bi₂O₂Se/p-Si heterojunction photodetector with an ultrafast response (2.6 μs) and low dark current (10^-10 A without gate voltage regulation). It possesses a remarkable detectivity of 4.43 × 10¹² cm Hz^1/2 W^-1 and a self-powered photoresponse characteristic at 365-1550 nm (ultraviolet-near-infrared). Meanwhile, the Bi₂O₂Se/p-Si heterojunction photodetector also shows high stability and repeatability. It is expected that the proposed Bi₂O₂Se/p-Si heterojunction photodetector will expand the applications of Bi₂O₂Se in practical integrated circuits in the field of material science, energy development, optical imaging, biomedicine, and other applications.

Exploitation of Schottky-Junction-based Sensors for Specifically Detecting ppt-Concentration Gases

Gas species and concentrations of human-exhaled breath correlate with health, wherein disease markers contain volatile organic compounds (VOCs) of concentrations in parts per billion. It is expected that a gas-sensing strategy possesses a gas specificity and detection limit in the parts per trillion (ppt) range; however, it is still a challenge. This investigation has exploited the Schottky junction of gas sensors for detecting the reactance signal of ppt VOC, aiming for a specific and rapid detection toward disease marker acetone. In this new sensing paradigm, formed by the engineered energy band between metal-semiconductor contact, the Schottky junction is accessed to specific modulation of different adsorbate dopings and the corresponding reactance signal is measured. Regarding the detection toward ppt concentration of acetone, this sensing paradigm possesses rapid (∼100 s) and room-temperature response, molecular specificity, and 34 ppt of detection limit. The proposed detection paradigm is demonstrated to show a high feasibility toward detection of disease marker acetone.

Step-Climbing Epitaxy of Layered Materials with Giant Out-of-Plane Lattice Mismatch

Heteroepitaxy with large lattice mismatch remains a great challenge for high-quality epifilm growth. Although great efforts have been devoted to epifilm growth with an in-plane lattice mismatch, the epitaxy of 2D layered crystals on stepped substrates with a giant out-of-plane lattice mismatch is seldom reported. Here, taking the molecular-beam epitaxy of 2D semiconducting Bi₂ O₂ Se on 3D SrTiO₃ substrates as an example, a step-climbing epitaxy growth strategy is proposed, in which the n-th (n = 1, 2, 3…) epilayer climbs the step with height difference from out-of-plane lattice mismatch and continues to grow the n+1-th epilayer. Step-climbing epitaxy can spontaneously relax and release the strain from the out-of-plane lattice mismatch, which ensures the high quality of large-area epitaxial films. Wafer-scale uniform 2D Bi₂ O₂ Se single-crystal films with controllable thickness can be obtained via step-climbing epitaxy. Most notably, one-unit-cell Bi₂ O₂ Se films (1.2 nm thick) exhibit a high Hall mobility of 180 cm² V^-1 s^-1 at room temperature, which exceeds that of silicon and other 2D semiconductors with comparable thickness. As an out-of-plane lattice mismatch is generally present in the epitaxy of layered materials, the step-climbing epitaxy strategy expands the existing epitaxial growth theory and provides guidance toward the high-quality synthesis of layered materials.

Defect Engineering in Thickness-Controlled Bi2O2Se-Based Transistors by Argon Plasma Treatment

We present a simple, effective, and controllable method to uniformly thin down the thickness of as-exfoliated two-dimensional Bi₂O₂Se nanoflakes using Ar⁺ plasma treatment. Atomic force microscopy (AFM) images and Raman spectra indicate that the surface morphology and crystalline quality of etched Bi₂O₂Se nanoflakes remain almost unaffected. X-ray photoelectron spectra (XPS) indicate that the O and Se vacancies created during Ar⁺ plasma etching on the top surface of Bi₂O₂Se nanoflakes are passivated by forming an ultrathin oxide layer with UV O₃ treatment. Moreover, a bottom-gate Bi₂O₂Se-based field-effect transistor (FET) was constructed to research the effect of thicknesses and defects on electronic properties. The on-current/off-current (I_on/I_off) ratio of the Bi₂O₂Se FET increases with decreasing Bi₂O₂Se thickness and is further improved by UV O₃ treatment. Eventually, the thickness-controlled Bi₂O₂Se FET achieves a high I_on/I_off ratio of 6.0 × 10⁴ and a high field-effect mobility of 5.7 cm² V^-1 s^-1. Specifically, the variation trend of the I_on/I_off ratio and the electronic transport properties for the bottom-gate Bi₂O₂Se-based FET are well described by a parallel resistor model (including bulk, channel, and defect resistance). Furthermore, the I_ds-V_gs hysteresis and its inversion with UV irradiation were observed. The pulsed gate and drain voltage measurements were used to extract trap time constants and analyze the formation mechanism of different hysteresis. Before UV irradiation, the origin of clockwise hysteresis is attributed to the charge trapping/detrapping of defects at the Bi₂O₂Se/SiO₂ interface and in the Bi₂O₂Se bulk. After UV irradiation, the large anticlockwise hysteresis is mainly due to the tunneling between deep-level oxygen defects in SiO₂ and p⁺⁺-Si gate, which implies the potential in nonvolatile memory.

Charge Transfer Properties of Heterostructures Formed by Bi2 O2 Se and Transition Metal Dichalcogenide Monolayers

Atomically thin bismuth oxyselenide (Bi₂ O₂ Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi₂ O₂ Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi₂ O₂ Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi₂ O₂ Se and representative transition metal dichalcogenides (namely, WS₂ /Bi₂ O₂ Se and MoS₂ /Bi₂ O₂ Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi₂ O₂ Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

Self-Healing, Self-Adhesive and Stable Organohydrogel-Based Stretchable Oxygen Sensor with High Performance at Room Temperature

With the advent of the 5G era and the rise of the Internet of Things, various sensors have received unprecedented attention, especially wearable and stretchable sensors in the healthcare field. Here, a stretchable, self-healable, self-adhesive, and room-temperature oxygen sensor with excellent repeatability, a full concentration detection range (0-100%), low theoretical limit of detection (5.7 ppm), high sensitivity (0.2%/ppm), good linearity, excellent temperature, and humidity tolerances is fabricated by using polyacrylamide-chitosan (PAM-CS) double network (DN) organohydrogel as a novel transducing material. The PAM-CS DN organohydrogel is transformed from the PAM-CS composite hydrogel using a facile soaking and solvent replacement strategy. Compared with the pristine hydrogel, the DN organohydrogel displays greatly enhanced mechanical strength, moisture retention, freezing resistance, and sensitivity to oxygen. Notably, applying the tensile strain improves both the sensitivity and response speed of the organohydrogel-based oxygen sensor. Furthermore, the response to the same concentration of oxygen before and after self-healing is basically the same. Importantly, we propose an electrochemical reaction mechanism to explain the positive current shift of the oxygen sensor and corroborate this sensing mechanism through rationally designed experiments. The organohydrogel oxygen sensor is used to monitor human respiration in real-time, verifying the feasibility of its practical application. This work provides ideas for fabricating more stretchable, self-healable, self-adhesive, and high-performance gas sensors using ion-conducting organohydrogels.

Recent Development of Gas Sensing Platforms Based on 2D Atomic Crystals

Sensors, capable of detecting trace amounts of gas molecules or volatile organic compounds (VOCs), are in great demand for environmental monitoring, food safety, health diagnostics, and national defense. In the era of the Internet of Things (IoT) and big data, the requirements on gas sensors, in addition to sensitivity and selectivity, have been increasingly placed on sensor simplicity, room temperature operation, ease for integration, and flexibility. The key to meet these requirements is the development of high-performance gas sensing materials. Two-dimensional (2D) atomic crystals, emerged after graphene, have demonstrated a number of attractive properties that are beneficial to gas sensing, such as the versatile and tunable electronic/optoelectronic properties of metal chalcogenides (MCs), the rich surface chemistry and good conductivity of MXenes, and the anisotropic structural and electronic properties of black phosphorus (BP). While most gas sensors based on 2D atomic crystals have been incorporated in the setup of a chemiresistor, field-effect transistor (FET), quartz crystal microbalance (QCM), or optical fiber, their working principles that involve gas adsorption, charge transfer, surface reaction, mass loading, and/or change of the refractive index vary from material to material. Understanding the gas-solid interaction and the subsequent signal transduction pathways is essential not only for improving the performance of existing sensing materials but also for searching new and advanced ones. In this review, we aim to provide an overview of the recent development of gas sensors based on various 2D atomic crystals from both the experimental and theoretical investigations. We will particularly focus on the sensing mechanisms and working principles of the related sensors, as well as approaches to enhance their sensing performances. Finally, we summarize the whole article and provide future perspectives for the development of gas sensors with 2D materials.

Surface Functionalized Sensors for Humidity-Independent Gas Detection

Semiconducting metal oxides (SMOXs) are used widely for gas sensors. However, the effect of ambient humidity on the baseline and sensitivity of the chemiresistors is still a largely unsolved problem, reducing sensor accuracy and causing complications for sensor calibrations. Presented here is a general strategy to overcome water-sensitivity issues by coating SMOXs with a hydrophobic polymer separated by a metal-organic framework (MOF) layer that preserves the SMOX surface and serves a gas-selective function. Sensor devices using these nanoparticles display near-constant responses even when humidity is varied across a wide range [0-90 % relative humidity (RH)]. Furthermore, the sensor delivers notable performance below 20 % RH whereas other water-resistance strategies typically fail. Selectivity enhancement and humidity-independent sensitivity are concomitantly achieved using this approach. The reported tandem coating strategy is expected to be relevant for a wide range of SMOXs, leading to a new generation of gas sensors with excellent humidity-resistant performance.