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Serghiou G, Odling N, Reichmann HJ, Ji G, Koch-Müller M, Frost DJ, Wright JP, Boehler R, Morgenroth W. Hexagonal Si-Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature. Chemistry 2021; 27:14217-14224. [PMID: 34459046 DOI: 10.1002/chem.202102595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2021] [Indexed: 11/06/2022]
Abstract
Multi-anvil and laser-heated diamond anvil methods have been used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500-1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63 /mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of interest for optoelectronic applications.
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Affiliation(s)
- George Serghiou
- University of Edinburgh, School of Engineering, Kings Buildings, Robert Stevenson Road, Edinburgh, EH9 3FB, UK
| | - Nicholas Odling
- University of Edinburgh, School of Geosciences, The Grant Institute, Kings Buildings, West Mains Road, Edinburgh, EH9 3JW, UK
| | - Hans Josef Reichmann
- Helmholtz Centre Potsdam, German Research Centre for Geosciences, Telegrafenberg, 14473, Potsdam, Germany
| | - Gang Ji
- Univ. Lille, CNRS, INRA, ENSCL, UMR CNRS 8207, UMET, Unité Matériaux et Transformations, 59000, Lille, France
| | - Monika Koch-Müller
- Helmholtz Centre Potsdam, German Research Centre for Geosciences, Telegrafenberg, 14473, Potsdam, Germany
| | - Daniel J Frost
- Bayerisches Geoinstitut, University of Bayreuth, 95540, Bayreuth, Germany
| | | | - Reinhard Boehler
- Oak Ridge National Laboratory, Bethel Valley Rd, Oak Ridge, TN 37830, USA
| | - Wolfgang Morgenroth
- Institute of Geosciences, Goethe University Frankfurt, 60438, Frankfurt am Main, Germany.,Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany.,University of Potsdam, Institute of Geosciences, 14476, Potsdam, Germany
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Serghiou G, Odling N, Reichmann HJ, Spektor K, Crichton WA, Garbarino G, Mezouar M, Pakhomova A. Unconventional Route to High-Pressure and -Temperature Synthesis of GeSn Solid Solutions. J Am Chem Soc 2021; 143:7920-7924. [PMID: 34008965 DOI: 10.1021/jacs.1c03765] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
Ge and Sn are unreactive at ambient conditions. Their significant promise for optoelectronic applications is thus largely confined to thin film investigations. We sought to remove barriers to reactivity here by accessing a unique pressure, 10 GPa, where the two elements can adopt the same crystal structure (tetragonal, I41/amd) and exhibit compatible atomic radii. The route to GeSn solid solution, however, even under these directed conditions, is different. Reaction upon heating at 10 GPa occurs between unlike crystal structures (Ge, Fd3m and Sn, I4/mmm), which also have highly incompatible atomic radii. They should not react, but they do. A reconstructive transformation of I4/mmm into the I41/amd solid solution then follows. The new tetragonal GeSn solid solution (I41/amd a = 5.280(1) Å, c = 2.915(1) Å, Z = 4 at 9.9 GPa and 298 K) also constitutes the structural and electronic bridge between 4-fold and newly prepared 8-fold coordinated alloy cubic symmetries. Furthermore, using this high-pressure route, bulk cubic diamond-structured GeSn alloys can now be obtained at ambient pressure. The findings here remove confining conventional criteria on routes to synthesis. This opens innovative avenues to advanced materials development.
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Affiliation(s)
- George Serghiou
- School of Engineering, University of Edinburgh, Sanderson Building, Kings Buildings, Robert Stevenson Road, EH9 3FB, Scotland, United Kingdom
| | - Nicholas Odling
- School of Geosciences, The Grant Institute, University of Edinburgh, Kings Buildings, West Mains Road, Edinburgh, EH9 3JW, U.K
| | | | - Kristina Spektor
- ESRF The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Wilson A Crichton
- ESRF The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Gaston Garbarino
- ESRF The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Mohamed Mezouar
- ESRF The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Anna Pakhomova
- Deutsches Elektronen-Synchrotron (DESY), 22607 Hamburg, Germany
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Serghiou G, Reichmann HJ, Odling N, Spektor K, Pakhomova A, Crichton WA, Konôpková Z. An Unexpected Cubic Symmetry in Group IV Alloys Prepared Using Pressure and Temperature. Angew Chem Int Ed Engl 2021; 60:9009-9014. [PMID: 33527580 PMCID: PMC8049010 DOI: 10.1002/anie.202016179] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2020] [Indexed: 11/28/2022]
Abstract
The cubic diamond (Fd3‾m) group IVA element Si has been the material driver of the electronics industry since its inception. We report synthesis of a new cubic (Im3‾m) group IVA material, a GeSn solid solution, upon heating Ge and Sn at pressures from 13 to 28 GPa using double‐sided diamond anvil laser‐heating and large volume press methods. Both methods were coupled with in situ angle dispersive X‐ray diffraction characterization. The new material substantially enriches the seminal group IVA alloy materials landscape by introducing an eightfold coordinated cubic symmetry, which markedly expands on the conventional tetrahedrally coordinated cubic one. This cubic solid solution is formed, despite Ge never adopting the Im3‾m symmetry, melting inhibiting subsequent Im3‾m formation and reactant Ge and Sn having unlike crystal structures and atomic radii at all these pressures. This is hence achieved without adherence to conventional formation criteria and routes to synthesis. This advance creates fertile avenues for new materials development.
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Affiliation(s)
- George Serghiou
- School of Engineering, University of Edinburgh, Kings Buildings, Robert Stevenson Road, Edinburgh, EH9 3FB, Scotland, UK
| | | | - Nicholas Odling
- School of Geosciences, University of Edinburgh, Kings Buildings, West Mains Road, Edinburgh, EH9 3JW, Scotland, UK
| | - Kristina Spektor
- The European Synchrotron, ESRF, 71 avenue des Martyrs, 38000, Grenoble, France
| | - Anna Pakhomova
- Deutsches Elektronen-Synchrotron, DESY, 22607, Hamburg, Germany
| | - Wilson A Crichton
- The European Synchrotron, ESRF, 71 avenue des Martyrs, 38000, Grenoble, France
| | - Zuzana Konôpková
- Deutsches Elektronen-Synchrotron, DESY, 22607, Hamburg, Germany.,European XFEL GmbH, Holzkoppel 4, 22869, Schenefeld, Germany
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