Electrochemical Potential-Driven High-Throughput Molecular Electronic and Spintronic Devices: From Molecules to Applications

Metal-free platforms for molecular thin films as high-performance supercapacitors

Controlling chemical functionalization and achieving stable electrode-molecule interfaces for high-performance electrochemical energy storage applications remain challenging tasks. Herein, we present a simple, controllable, scalable, and versatile electrochemical modification approach of graphite rods (GRs) extracted from low-cost Eveready cells that were covalently modified with anthracene oligomers. The anthracene oligomers with a total layer thickness of ∼24 nm on the GR electrode yield a remarkable specific capacitance of ∼670 F g-1 with good galvanostatic charge-discharge cycling stability (10 000) recorded in 1 M H2SO4 electrolyte. Such a boost in capacitance is attributed mainly to two contributions: (i) an electrical double-layer at the anthracene oligomer/GR/electrolyte interfaces, and (ii) the proton-coupled electron transfer (PCET) reaction, which ensures a substantial faradaic contribution to the total capacitance. Due to the higher conductivity of the anthracene films, it possesses more azo groups (-N[double bond, length as m-dash]N-) during the electrochemical growth of the oligomer films compared to pyrene and naphthalene oligomers, which is key to PCET reactions. AC-based electrical studies unravel the in-depth charge interfacial electrical behavior of anthracene-grafted electrodes. Asymmetrical solid-state supercapacitor devices were made using anthracene-modified biomass-derived porous carbon, which showed improved performance with a specific capacitance of ∼155 F g-1 at 2 A g-1 with an energy density of 5.8 W h kg-1 at a high-power density of 2010 W kg-1 and powered LED lighting for a longer period. The present work provides a promising metal-free approach in developing organic thin-film hybrid capacitors.

Metal-organic Frameworks in Semiconductor Devices

Metal-organic frameworks (MOFs) are a specific class of hybrid, crystalline, nano-porous materials made of metal-ion-based 'nodes' and organic linkers. Most of the studies on MOFs largely focused on porosity, chemical and structural diversity, gas sorption, sensing, drug delivery, catalysis, and separation applications. In contrast, much less reports paid attention to understanding and tuning the electrical properties of MOFs. Poor electrical conductivity of MOFs (~10-7-10-10 S cm-1), reported in earlier studies, impeded their applications in electronics, optoelectronics, and renewable energy storage. To overcome this drawback, the MOF community has adopted several intriguing strategies for electronic applications. The present review focuses on creatively designed bulk MOFs and surface-anchored MOFs (SURMOFs) with different metal nodes (from transition metals to lanthanides), ligand functionalities, and doping entities, allowing tuning and enhancement of electrical conductivity. Diverse platforms for MOFs-based electronic device fabrications, conductivity measurements, and underlying charge transport mechanisms are also addressed. Overall, the review highlights the pros and cons of MOFs-based electronics (MOFtronics), followed by an analysis of the future directions of research, including optimization of the MOF compositions, heterostructures, electrical contacts, device stacking, and further relevant options which can be of interest for MOF researchers and result in improved devices performance.

Coexistence of Electrochromism and Bipolar Nonvolatile Memory in a Single Viologen

Viologens are fascinating redox-active organic compounds that have been widely explored in electrochromic devices (ECDs). However, the combination of electrochromic and resistive random-access memory in a single viologen remains unexplored. We report the coexistence of bistate electrochromic and single-resistor (1R) memory functions in a novel viologen. A high-performance electrochromic function is achieved by combining viologen (BzV2+2PF6) with polythiophene (P3HT), enabling a "push-pull" electronic effect due to the efficient intermolecular charge transfer in response to an applied bias. The ECDs show high coloration efficiency (ca. 1150 ± 10 cm2 C-1), subsecond switching time, good cycle stability (>103 switching cycles), and low-bias operation (±1.5 V). The ECDs require low power for switching the color states (55 μW cm-2 for magenta and 141 μW cm-2 for blue color). The random-access memory devices (p+2-Si/BzV2+2PF6/Al) exhibit distinct low and high resistive states with an ON/OFF ratio of ∼103, bipolar and nonvolatile characteristics that manifest good performances, and "Write"-"Read"-"Erase" (WRE) functions. The charge conduction mechanism of the RRAM device is elucidated by the Poole-Frenkel model where SET and RESET states arise at a low transition voltage (VT = ±1.7 V). Device statistics and performance parameters for both electrochromic and memory devices are compared with the literature data. Our findings on electrochromism and nonvolatile memory originated in the same viologen could boost the development of multifunctional, smart, wearable, flexible, and low-cost optoelectronic devices.

Chemical Approach Towards Broadband Spintronics on Nanoscale Pyrene Films

The injection of pure spin current into the non-magnetic layer plays a crucial role in transmitting, processing, and storing data information in the realm of spintronics. To understand broadband molecular spintronics, pyrene oligomer film (≈20 nm thickness) was prepared using an electrochemical method forming indium tin oxide (ITO) electrode/pyrene covalent interfaces. Permalloy (Ni80 Fe20 ) films with different nanoscale thicknesses were used as top contact over ITO/pyrene layers to estimate the spin pumping efficiency across the interfaces using broadband ferromagnetic resonance spectra. The spintronic devices are composed of permalloy/pyrene/ITO orthogonal configuration, showing remarkable spin pumping from permalloy to pyrene film. The large spin pumping is evident from the linewidth broadening of 5.4 mT at 9 GHz, which is direct proof of spin angular momentum transfer across the interface. A striking observation is made with the high spin-mixing conductance of ≈1.02×1018  m-2 , a value comparable to the conventional heavy metals. Large spin angular moment transfer was observed at the permalloy-pyrene interfaces, especially at the lower thickness of permalloy, indicating a strong spinterface effect. Pure spin current injection from ferromagnetic into electrochemically grown pyrene films ensures efficient broadband spin transport, which opens a new area in molecular broadband spintronics.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Optical properties of plasmonic tunneling junctions

Over the last century, quantum theories have revolutionized our understanding of material properties. One of the most striking quantum phenomena occurring in heterogeneous media is the quantum tunneling effect, where carriers can tunnel through potential barriers even if the barrier height exceeds the carrier energy. Interestingly, the tunneling process can be accompanied by the absorption or emission of light. In most tunneling junctions made of noble metal electrodes, these optical phenomena are governed by plasmonic modes, i.e., light-driven collective oscillations of surface electrons. In the emission process, plasmon excitation via inelastic tunneling electrons can improve the efficiency of photon generation, resulting in bright nanoscale optical sources. On the other hand, the incident light can affect the tunneling behavior of plasmonic junctions as well, leading to phenomena such as optical rectification and induced photocurrent. Thus, plasmonic tunneling junctions provide a rich platform for investigating light-matter interactions, paving the way for various applications, including nanoscale light sources, sensors, and chemical reactors. In this paper, we will introduce recent research progress and promising applications based on plasmonic tunneling junctions.

Nanoscale molecular rectifiers

The use of molecules bridged between two electrodes as a stable rectifier is an important goal in molecular electronics. Until recently, however, and despite extensive experimental and theoretical work, many aspects of our fundamental understanding and practical challenges have remained unresolved and prevented the realization of such devices. Recent advances in custom-designed molecular systems with rectification ratios exceeding 10⁵ have now made these systems potentially competitive with existing silicon-based devices. Here, we provide an overview and critical analysis of recent progress in molecular rectification within single molecules, self-assembled monolayers, molecular multilayers, heterostructures, and metal-organic frameworks and coordination polymers. Examples of conceptually important and best-performing systems are discussed, alongside their rectification mechanisms. We present an outlook for the field, as well as prospects for the commercialization of molecular rectifiers.

Bias-Voltage Dependence of Tunneling Decay Coefficient and Barrier Height in Arylalkane Molecular Junctions with Graphene Contacts as a Protecting Interlayer

We studied a molecular junction with arylalkane self-assembled monolayers sandwiched between two graphene contacts. The arrangement of graphene-based molecular junctions provides a stable device structure with a high yield and allows for extensive transport measurements at 78 K. We observed a temperature-independent current density–voltage (J–V) characteristic and the exponential dependency of the current density on the molecular length, proving that the charge transport occurs by non-resonant tunneling through the molecular barrier. Based on the Simmons model, the bias-voltage dependence of the decay coefficient and barrier height was extracted from variable-length transport characterizations. The J–V data measured were simulated by the Simmons model, which was modified with the barrier lowering induced by the bias voltage. Indeed, there isno need for adjustable fitting parameters. The resulting simulation was in remarkable consistency with experimental measurements over a full bias range up to |V| ≤ 1.5 V for the case of graphene/arylalkane/graphene heterojunctions. Our findings clearly showed the demonstration of stable and reliable molecular junctions with graphene contacts and their intrinsic charge transport characteristics, as well as justifying the application of the voltage-induced barrier lowering approximation to the graphene-based molecular junction.

Electrochemically Deposited Molecular Thin Films on Transparent Conductive Oxide substrate: Combined DC and AC Approaches for Characterization

Transparent conductive oxides such as indium tin oxide (ITO) substrates are commonly employed as prime materials for optoelectronic applications. Enhancement in functions of such devices often compels stable and robust modification of the ITO substrate to improve its interfacial charge transfer characteristics. Thereby, in this work, naphthyl modifier multilayer films are fabricated on ITO substrate using conventional electrochemical reduction of 1-naphthyl diazonium salts (NAPH-D) via altering its concentration ranging from 2 mM to 12 mM with a step size of 2. Surface coverage was significantly tuned by varying NAPH-D concentration, keeping other parameters such as the number of scans and scan rate constant. For lower concentration (2 mM), the molecular thickness ~ 6 nm was obtained, whereas, with higher concentration (12 mM) produced around 15-18 nm thickness. Atomic force microscopy (AFM), cyclic voltammetry and electrochemical impedance spectroscopy (EIS) in the presence of a ferrocene redox probe also supports the formation of well packed molecular film grown on the ITO surface. Further, the wettability property of the grafted naphthyl film was investigated at different surface coverages and correlated with charge transfer resistance (Rct) obtained from EIS studies.