Disorder–Order Conversion‐Induced Enhancement of Thermal Stability of Pyroxene Near‐Infrared Phosphors for Light‐Emitting Diodes

Achieving broadband near-infrared emission with superior anti-thermal quenching by optimizing the excited-state population of Cr3+ in Gd3ScGa4O12 garnet phosphors

Cr3+-activated garnet phosphors with broadband near-infrared (NIR) emission have attracted considerable interest due to their high quantum efficiency (QE) and thermal stability for widespread advanced applications. Nevertheless, how to achieve energy-saving broadband NIR phosphors that possess anti-thermal quenching (anti-TQ) without compromising the high QE has yet to be fully addressed. Herein, we report on site reconstruction within the garnet lattice by strategically positioning Sc and Ga atoms into octahedral B sites with a mole ratio of 1 : 1 to produce Gd3ScGa4O12. A reduction in crystal field strength (CFS) is thus induced, leading to a redshift of Cr3+ broadband NIR emission. The inherent rigidity of the structure and the weak electron-phonon coupling (EPC) effect lay the groundwork for a thermally robust broadband NIR phosphor. The combination of bandgap engineering, finely optimizing the 4T2 excited state population, and precise control over the doping concentration contributes a high-performance broadband NIR emission (IQE = 82.75%) with unprecedented anti-TQ such that the NIR emission of Cr3+ even increases to 198% of its room-temperature intensity at 543 K. A prototype broadband NIR pc-LED is encapsulated to deliver an NIR output power of 125.20 mW@900 mA and a wall-plug efficiency (WPE) of 6.88%@30 mA, enabling night vision, noninvasive imaging, and non-destructive detection applications.

Hydrofluoric Acid-Free Broadband Near-Infrared Phosphors K2LiMF6:Cr3+ with Zero-Thermal Quenching: Structure, Luminescence, and Application

Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are considered promising light sources for night vision, food analysis, biomedicine, and plant growth. Yet, the application potential of this technology is vulnerable to the function degradation of the phosphors used, such as thermal quenching, which needs to be addressed urgently. Herein, the NIR phosphors K2LiMF6:Cr3+ (M = Al, Ga, In) with a cubic double-perovskite structure synthesized by a green hydrofluoric acid-free hydrothermal method exhibit outstanding thermal stability. Under 450 nm excitation, the as-synthesized K2LiMF6:Cr3+ phosphors all exhibited broadband NIR emission covering 650-1000 nm peaking at 755-780 nm. The prepared K2LiAlF6:Cr3+ phosphor shows a unique zero-thermal quenching performance (I423 K/I298 K = 102%). The comprehensive effects of a wide band gap, large thermal energy barrier, weak electron-phonon coupling effect, and high structural rigidity are responsible for the suppression of thermal quenching in this material. The output power of the NIR pc-LED device reached 285 mW at 100 mA. This series of phosphors has promise in night vision and bioimaging applications.

Achieving a Balance of Good Quantum Efficiency and Thermal Stability in the Y2CaScAl3GeO12:Cr3+ Broadband Phosphor for Multiple NIR Spectroscopy Applications

Near-infrared phosphor-converted light emitting diodes (NIR pc-LEDs) are considered as desirable NIR light sources to satisfy current needs owing to their numerous remarkable features. Nevertheless, as an essential component, previously reported NIR phosphors with broadband emission often suffer from inferior efficiency or thermal stability, therefore restricting their use and promotion. Herein, a novel Cr3+-doped garnet phosphor Y2CaScAl3GeO12:Cr3+ (YCSAG:Cr3+) is developed via regulating the near-neighbor coordination polyhedron. Under the excitation of blue light, it exhibits a broadband NIR emission peaking near 800 nm with a full width at half-maximum (fwhm) exceeding 150 nm, owing to the increased structural distortion of the octahedron. Particularly, due to the enhanced local structural rigidity induced by lattice shrinkage, the optimal sample achieves a balance of high internal quantum efficiency (IQE) of approximately 83% and thermal stability of approximately 90% at 393 K, facilitating its practical application as an NIR light source. Eventually, using the typical YCSAG:0.04Cr3+ phosphor and 450 nm blue LED chip, a high-performance NIR pc-LED device has been manufactured, demonstrating potential applications in anticounterfeiting and night vision.

Low thermal quenching of metal halide-based metal-organic framework phosphor for light-emitting diodes

Phosphor-converted white light-emitting diodes (PC-WLEDs) have attracted considerable attention in solid-state lighting and display. However, urgent issues of thermal quenching and high cost remain formidable challenges. Herein, a novel metal-organic framework (MOF) phosphor [CdCl2(AD)] was facilely prepared using a mixture of CdCl2 and acridine (AD) under solvothermal conditions. It shows intensive green emission with a long lifetime of 31.88 ns and quantum yield of 65% while maintaining 95% and 84% of its initial emission intensity after remaining immersed in water for 60 days and being heated to 150 °C, respectively. The low thermal quenching of this MOF material is comparable to or can even exceed that of commercial inorganic phosphors. The combination of experiments and theoretical calculations reveals that the alternating arrangement of delocalized AD π-conjugated systems and CdCl2 inorganic chains through strong coordination bonds and π⋯π stacking interactions imparts the MOF phosphor with high thermal stability and optoelectronic performance. The successful fabrication of green and white LED devices by coating [CdCl2(AD)] and/or N630 red phosphor on a 365/460 nm commercial diode chip suggests a promising and potential alternative to commercial phosphors.

Unlocking Cr3+-Cr3+ Coupling in Spinel: Ultrabroadband Near-Infrared Emission beyond 900 nm with High Efficiency and Thermal Stability

Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) hold promising potential as next-generation compact, portable, and intelligent NIR light sources. Nonetheless, the lack of high-performance broadband NIR phosphors with an emission peak beyond 900 nm has severely hindered the development and widespread application of NIR pc-LEDs. This study presents a strategy for precise control of energy-state coupling in spinel solid solutions composed of MgxZn1-xGa2O4 to tune the NIR emissions of Cr3+ activators. By combining crystal field engineering and heavy doping, the Cr3+-Cr3+ ion pair emission from the 4T2 state is unlocked, giving rise to unusual broadband NIR emission spanning 650 and 1400 nm with an emission maximum of 913 nm and a full width at half-maximum (fwhm) of 213 nm. Under an optimal Mg/Zn ratio of 4:1, the sample achieves record-breaking performance, including high internal and external quantum efficiency (IQE = 83.9% and EQE = 35.7%) and excellent thermal stability (I423 K/I298 K = 75.8%). Encapsulating the as-obtained phosphors into prototype pc-LEDs yields an overwhelming NIR output power of 124.2 mW at a driving current of 840 mA and a photoelectric conversion efficiency (PCE) of 10.5% at 30 mA, rendering high performance in NIR imaging applications.

Designing high thermally stable deep red phosphors based on low thermal expansion coefficients for optical applications

Mn4+-activated oxide phosphors with low cost and unique luminescent properties have been considered as a promising candidate for various optical applications, while the search for high thermal stable red-emitting phosphors is still a huge challenge. In our work, we find and unveil the relationship between luminescence thermal quenching behavior and thermal expansion coefficients (α/10-6 K-1) based on double-perovskite niobate phosphors Ca2LnNbO6:Mn4+ (Ln3+ = Y3+, Gd3+, La3+, or Lu3+). It can be concluded that the phosphors with low thermal expansion coefficients contribute to high thermal stability. Subsequently, Ca2LuNbO6:Mn4+ accomplishes accurate temperature testing and high-CRI white light-emitting diodes. Thus, a thermal expansion coefficient strategy is a new guide to select the appropriate substrate with high thermal stability for an Mn4+-activated emitter.

Thermal stability and quantum efficiency improvement of Cr3+-activated garnet phosphors via regulating A/B sites for near-infrared LED applications

The discovery of phosphors with highly efficient broadband near-infrared emission is urgent for constructing NIR sources for various applications. Herein, we synthesized a series of near-infrared emitting garnet-type (A3B2C3O12) Lu2-xCaAl3.99Cr0.01SiO12:xGd/La and Lu2CaAl3.99-yCr0.01SiO12:ySc/Ga phosphors and systematically investigated the effect of A/B-site substitution on the crystal structure and luminescence properties. Structural and optical analyses revealed that the A/B-site substitution weakened the crystal field strength, further enhancing the broadband emission of the allowed 4T2 → 4A2transition and diminishing the narrow-peak emission of the forbidden 2E → 4A2 transition. As expected, NIR phosphors, exemplified by Lu1.7CaAl3.99Cr0.01SiO12:0.3Gd and Lu2CaAl3.49Cr0.01SiO12:0.5Sc, showed outstanding thermal stabilities at 423 K (150 °C) registering values of 103.02% and 94.91%, with high quantum efficiencies of 80.48% and 85.01%, respectively. In addition, pc-LEDs with broadband NIR output and good optoelectronic properties have been realized, demonstrating the great potential of broadband NIR pc-LEDs for applications. This work not only provides a series of high-efficiency phosphors for NIR pc-LED applications, but also provides a systematic idea and an efficient method to improve the luminescence performance of garnet-type phosphors.

Host Dependency of Boundary between Strong and Weak Crystal Field Strength of Cr3+ Luminescence

Cr3+ doped near-infrared phosphors hold significant applications and generate considerable research interest. The critical parameter for assessing the strength of the crystal field for Cr3+ in the Tanabe-Sugano diagram is the boundary value of Dq/B, representing the ratio of crystal field splitting to the Racah parameter B. Nevertheless, there are conflicting values for this parameter, as reported in various studies, such as 2.1, 2.2, and 2.3 for C/B = 4.5-4.8. Moreover, some Cr3+ doped phosphors with wide-band emissions exhibit a Dq/B value that falls within the region of a contradictory strong field. In this study, we numerically determine the boundary value of Dq/B, which distinguishes between strong and weak fields. The results then demonstrate a dependence on the host material and are correlated with the values of Racah parameters B and C. This work resolves the inconsistency between the boundary values of Dq/B and the emission profile of Cr3+, providing researchers with a more profound comprehension of Cr3+ luminescence.

High Output Power and High Quantum Efficiency in Novel NIR Phosphor MgAlGa0.7 B0.3 O4 :Cr3+ with Profound FWHM Variation

There is strong demand for ultraefficient near-infrared (NIR) phosphors with adjustable emission properties for next-generation intelligent NIR light sources. Designing phosphors with large full-width at half-maximum (FWHM) variations is challenging. In this study, novel near-ultraviolet light-emitting diode (LED)-excited NIR phosphors, MgAlGa0.7 B0.3 O4 :Cr3+ (MAGBO:Cr3+ ), with three emission centers achieve ultra-narrowband (FWHM = 29 nm) to ultra-broadband (FWHM = 260 nm) emission with increasing Cr3+ concentration. Gaussian fitting and decay time analysis reveal the alteration in the FWHM, which is attributed to the energy transfer occurring between the three emission centers. The distinct thermal quenching behaviors of the three emission centers are revealed through the temperature-dependent decay times. The ultra-broadband NIR phosphor MAGBO:0.05Cr3+ exhibits high thermal stability (85%, 425 K) and exceptional external quantum efficiency of 68.5%. An NIR phosphor-converted LED (pc-LED) is fabricated using MAGBO:0.05Cr3+ phosphor, exhibiting a remarkable NIR output power of 136 mW at 600 mA in ultra-broadband NIR pc-LEDs. This study describes the preparation of highly efficient phosphors and provides a further understanding of the tunable FWHM, which is vital for high-performance NIR phosphors with versatile applications.

Remote Control and Noninvasive Detection Enabled by a High-performance NIR pc-LED

In an increasing manner, near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are considered to be exemplary light sources owing to their notable attributes of elevated output power, economical nature, and exceptional portability. NIR phosphors are critical components of NIR pc-LEDs. Herein, we report a novel blue light excitable NIR phosphor CaLu2ZrScAl3O12:Cr3+ (CLZSA:Cr3+) as a crucial and efficient broadband NIR emitter. The CLZSA:Cr3+ phosphor displays an intense NIR broadband emission peaking at 776 nm and with a full width at half-maximum (fwhm) of 140 nm. The designed material also exhibits superior resistance to thermal quenching, as the intensity of emission at 423 K remains at 80% of that at room temperature. The constructed NIR pc-LED device based on CLZSA:Cr3+ demonstrates a high total output power of 68.4 mW at a drive current of 100 mA, along with a high photoelectric conversion efficiency of 23.0%. Impressively, the high-power NIR pc-LEDs are utilized as light sources for remote control and non-invasive detection, resulting in the excellent performance and remarkable achievement.

Achieving Luminescence of Sr3Ga1.98In0.02Ge4O14:0.03Cr3+ via [In3+] Substitution [Ga3+] and Its Application to NIR pc-LED in Non-Destructive Testing

Cr3+-doped Sr3Ga2Ge4O14:0.03Cr3+ (SGGO:0.03Cr3+) phosphor was synthesized via a high-temperature solid-phase method. Considering the tunable structure of SGGO, Ga3+ ions in the matrix were substituted with In3+ ions at a certain concentration. The tuned phosphor produced a red-shifted emission spectrum, with its luminescence intensity at 423 K maintained at 63% of that at room temperature; moreover, the internal quantum efficiency increased to 65.60%, and the external quantum efficiency correspondingly increased to 21.94%. On this basis, SGIGO:0.03Cr3+ was encapsulated into a pc-LED, which was applied in non-destructive testing (NDT) experiments, successfully realizing the recognition of water and anhydrous ethanol, proving its potential application in the field of NDT.

Realization of Broadband Near-Infrared Emission with High Thermal Stability in YGa3(BO3)4: Cr3+ Borate Phosphor

As a key material for phosphor-converted light-emitting diodes (pc-LEDs) applications, broadband near-infrared (NIR) phosphors currently face poor thermal stability issues. In this work, we synthesized a broadband near-infrared phosphor YGa3(BO3)4: Cr3+ (YGBO: Cr3+) with a high thermal stability. The YGBO: Cr3+ sample exhibits a broadband near-infrared emission centered at 770 nm with a full width at half-maximum (fwhm) of 2130 cm-1 under blue light excitation. Benefiting from the borate host crystal's strong structural rigidity, wide optical band gap, and weak electron-phonon coupling strength, YGBO: Cr3+ demonstrates strong luminescence thermal stability, and the corresponding luminescence intensity can maintain 80% at 150 °C compared to room temperature. Furthermore, we fabricated a pc-LED device using a blue light chip and YGBO: Cr3+ phosphor, and confirmed its application potential as a near-infrared light source in the spectral analysis of fruit freshness.

Quantifying rigidity for thermally stable Cr3+ phosphors

Near-infrared (NIR) phosphors with high thermal stability are significant for NIR light-emitting diodes (LEDs). For a decade, Debye temperature has been a successful indicator of structural rigidity and thermal stability for phosphors, but some exceptions exist due to its dependence on atomic mass. Inspired by the Debye temperature model that relates the elastic properties of solids, our density functional theory calculations revealed that the Vickers hardness of Cr3+-doped NIR phosphors was negatively correlated with Stokes shifts (Pearson's R = -0.81) and positively correlated with thermal stabilities (Pearson's R = 0.85) within a set of 13 distinct material types. Highlighting the predictive power of Vickers hardness, two new NIR phosphors were investigated: KMg(PO3)3:Cr3+ showed low thermal stability, correlating with its lower Vickers hardness, in contrast to the high thermal stability and correspondingly higher Vickers hardness of La2MgSnO6:Cr3+. Vickers hardness can be used to screen potential hosts for Cr3+-doped NIR phosphors with high thermal stabilities, due to the advantages of the predictable feature by density functional theory calculation and low independence on atomic mass.

Influence of framework disordering on the luminescence performance of Cr3+-doped near-infrared phosphors: a case study of A3B6O14-type hosts

The luminescence efficiency and thermal stability are enduring topics in the realm of phosphors. It is acknowledged that the structural transformation from disorder to order results in increased lattice rigidity, consequently inducing heightened efficiency and enhanced thermal stability. In this case study of the structural evolution of Ca3Ga2Ge4O14:Cr3+, NaCa2GaGe5O14:Cr3+ and Na2CaGe6O14:Cr3+ near-infrared (NIR) phosphors, a significant paradox is revealed: the incongruent relationship between the fluctuating degrees of disorder and the simultaneous improvements in efficiency and thermal stability. By drawing on insights gained from structural analysis, optical investigations, and theoretical calculations, a notable revelation surfaces: the primary factor affecting rigidity and optical performance is not the disordering of the entire lattice, but rather the disordering of the framework itself. The findings elucidate the principle of framework-order engineering for crafting high-performance NIR phosphors.

Valence conversion and site reconstruction in near-infrared-emitting chromium-activated garnet for simultaneous enhancement of quantum efficiency and thermal stability

Achievement of high photoluminescence quantum efficiency and thermal stability is challenging for near-infrared (NIR)-emitting phosphors. Here, we designed a "kill two birds with one stone" strategy to simultaneously improve quantum efficiency and thermal stability of the NIR-emitting Ca3Y2-2x(ZnZr)xGe3O12:Cr garnet system by chemical unit cosubstitution, and revealed universal structure-property relationship and the luminescence optimization mechanism. The cosubstitution of [Zn2+-Zr4+] for [Y3+-Y3+] played a critical role as reductant to promote the valence transformation from Cr4+ to Cr3+, resulting from the reconstruction of octahedral sites for Cr3+. The introduction of [Zn2+-Zr4+] unit also contributed to a rigid crystal structure. These two aspects together realized the high internal quantum efficiency of 96% and excellent thermal stability of 89%@423 K. Moreover, information encryption with "burning after reading" was achieved based on different chemical resistance of the phosphors to acid. The developed NIR-emitting phosphor-converted light-emitting diode demonstrated promising applications in bio-tissue imaging and night vision. This work provides a new perspective for developing high-performance NIR-emitting phosphor materials.

Improved Thermal and Chemical Stability of Oxynitride Phosphor from Facile Chemical Synthesis for Vehicle Cornering Lights

Orange Eu2+ -doped phosphors are essential for light-emitting diodes for cornering lights to prevent fatal road accidents at night, but such phosphors require features of high thermal, chemical stability and facile synthesis. This study reports a series of yellow-orange-red emitting SrAl2 Si3 ON6 :Eu2+ oxynitride phosphors, derived from the SrAlSi4 N7 nitride iso-structure by replacing Si4+ -N3- with Al3+ -O2- . The introduction of a certain amount of oxygen enabled the facile synthesis under atmospheric pressure using the air-stable raw materials SrCO3 , Eu2 O3 , AlN and Si3 N4 . SrAl2 Si3 ON6 has a smaller band gap and lower structure rigidity than SrAlSi4 N7 (5.19 eV vs 5.50 eV, Debye temperature 719 K vs 760 K), but exhibits higher thermal stability with 100 % of room temperature intensity remaining at 150 °C compared to 85 % for SrAlSi4 N7 . Electron paramagnetic resonance, thermoluminescence and density functional theory revealed that the oxygen vacancy electron traps compensated the thermal loss. Additionally, no decrease in emission intensity was found after either being heated at 500 °C for 2 hours or being immersed in water for 20 days, implying both of the thermal and chemical stability of SrAl2 Si3 ON6 :Eu2+ phosphors. The strategy of oxynitride-introduction from nitride promotes the development of low-cost thermally and chemically stable luminescent materials.

Study on the mechanism of high energy transfer efficiency of blue light excited Cr3+, Nd3+ co-doped near infrared phosphors

Although Cr3+ as activator for Near infrared (NIR) phosphors has been widely studied, the peaks of Cr3+ emission spectra in most hosts are less than 1000 nm. Nd3+ as an activator in many hosts has a wide distribution of absorption peaks in the Ultraviolet-visible-Near infrared (UV-vis-NIR) band, especially in the 650-900 nm band for effective NIR to NIR Stokes luminescence (4F3/2→4I9/2, 4F3/2→4I11/2 transitions). Therefore, Cr3+, Nd3+ co-doping to achieve the emission in the NIR II region (1000-1700nm) is very meaningful. Here, we report La2CaZrO6(LCZO): Cr3+, Nd3+ NIR phosphors with emission spectra covering an ultra-wide range of 700-1400 nm and reveal their luminescence mechanism. The energy transfer efficiency of Cr3+ for Nd3+ can be as high as 88.4% under 471 nm blue light excitation. In the same case, the integrated intensity of the emission spectra of Cr3+, Nd3+ co-doped can reach 847% of that of Nd3+ alone and 204% of that of Cr3+ alone. Finally, the combination of commercial blue light chips and Cr3+, Nd3+ co-doped NIR phosphors shows great potential for applications in face recognition, night lighting, and angiography.

Near-Infrared Photoluminescence from Ytterbium- and Erbium-Codoped CsPbCl3 Perovskite Quantum Dots with Negative Thermal Quenching

Near-infrared (NIR) luminescent phosphors hold promise for a wide range of applications, from bioimaging to light-emitting diodes (LEDs), but are typically confined to wavelengths <1300 nm and manifest substantial thermal quenching pervasive in luminescent materials. Here we observed the thermally enhanced NIR luminescence of Er³⁺ (1540 nm), a 2.5-fold enhancement with increasing temperature from 298 to 356 K, from Yb³⁺- and Er³⁺-codoped CsPbCl₃ perovskite quantum dots (PQDs) (photoexcited at ∼365 nm). Mechanistic investigations revealed that thermally enhanced phenomena originated from combined effects of thermally stable cascade energy transfer (from a photoexcited exciton to a pair of Yb³⁺ and then to surrounding Er³⁺) and minimized quenching of surface-adsorbed water molecules on the ⁴I_13/2 state of Er³⁺ induced by the temperature increase. Importantly, these PQDs enable producing phosphor-converted LEDs emitting at 1540 nm with inherited thermally enhanced properties, having implications for a wide range of photonic applications.

High-temperature negative thermal quenching phosphors from molecular-based materials

High-temperature negative thermal quenching (NTQ) phosphors are crucial to high-performance light-emitting devices. Herein, we report the high-temperature NTQ effect in deep-red to near-infrared (NIR) emitting copper iodide cluster-based coordination polymers as unconventional phosphors, whose NTQ operating temperature can reach as high as 500 K, the highest temperature reached by NTQ molecular-based materials.

Thermodynamics and Kinetics Accounting for Antithermal Quenching of Luminescence in Sc2(MoO4)3: Yb/Er: Perspective beyond Negative Thermal Expansion

Defects are common in inorganic materials and not static upon annealing of the heat effect. Antithermal quenching of luminescence in phosphors may be ascribed to the migration of defects and/or ions, which has not been well-studied. Herein, we investigate the antithermal quenching mechanism of upconversion luminescence in Sc₂(MoO₄)₃: 9%Yb1%Er with negative thermal expansion via a fresh perspective on thermodynamics and kinetics, concerning the thermally activated movement of defects and/or ions. Our results reveal a second-order phase transition taking place at ∼573 K induced by oxide-ion migration. The resulting variation of the thermodynamics and kinetics of the host lattice owing to the thermally induced oxide-ion movement contributes to a more suppressed nonradiative decay rate. The dynamic defects no longer act as quenching centers with regard to the time scale during which they stay nearby the Yb³⁺/Er³⁺ site in our proposed model. This research opens an avenue for understanding the antithermal quenching mechanism of luminescence via thermodynamics and kinetics.