Synergic Electron and Defect Compensation Minimizes Voltage Loss in Lead-Free Perovskite Solar Cells

Ternary Passivation for Enhanced Carrier Transport and Recombination Suppression in Highly Efficient Sn-Based Perovskite Solar Cells

The exploration of nontoxic Sn-based perovskites as a viable alternative to their toxic Pb-based counterparts has garnered increased attention. However, the power conversion efficiency of Sn-based perovskite solar cells lags significantly behind their Pb-based counterparts. This study presents a ternary passivation strategy aimed at enhancing device performance, employing [6,6]-phenyl-C61-butyric-acid-methyl-ester (PCBM), poly(3-hexylthiophene) (P3HT), and indene C60 bisadduct (ICBA). These components play crucial roles in managing energy levels and enhancing carrier transportation, respectively. The results reveal that the introduction of the ternary system leads to improvements in carrier collection and transportation, accompanied by a suppression of the recombination process. Ultimately, the champion device achieves a remarkable performance with an efficiency of 14.64%. Notably, the device also exhibits robust operational and long-term stored stability.

Additive engineering via multiple-anchoring enhances 2D perovskite solar cells' performance

Passivation defects and reducing charge recombination are of great importance in enhancing 2D perovskite solar cells' (PSCs) performance. Herein, a novel additive (TEMPIC) is introduced into 2D PSCs to improve photovoltaic properties of the device, which are mainly attributed to passivated trap-states and reduced charge recombination in device.

Open-circuit voltage deficits in Tin-based perovskite solar cells

The power conversion efficiency of Pb-based single-junction perovskite solar cells (PSCs) has surpassed 26%; however, the biocompatibility concerns associated with Pb pose threats to both the environment and living organisms. Consequently, the development of Pb-free PSCs is imperative. Among the various alternatives to Pb-based PSCs, Sn-based PSCs have exhibited outstanding optoelectronic properties, showing great potential for large-scale manufacturing and commercialization. Nevertheless, there remains a significant efficiency gap between Sn-based and Pb-based PSCs. The disparity primarily stems from substantial open-circuit voltage (VOC) deficits in Sn-based PSCs, typically ranging from 0.4 to 0.6 V. The main reason ofVOCdeficits is severe non-radiative recombination losses, which are caused by the uncontrolled crystallization kinetics of Sn halide perovskites and the spontaneous oxidation of Sn2+. This review summarizes the reasons forVOCdeficits in Sn-based PSCs, and the corresponding strategies to mitigate these issues. Additionally, it outlines the persistent challenges and future prospects for Sn-based PSCs, providing guidance to assist researchers in developing more efficient and stable Sn-based perovskites.

Counter-Doping Effect by Trivalent Cations in Tin-Based Perovskite Solar Cells

Tin (Sn) -based perovskite solar cells (PSCs) normally show low open circuit voltage due to serious carrier recombination in the devices, which can be attributed to the oxidation and the resultant high p-type doping of the perovskite active layers. Considering the grand challenge to completely prohibit the oxidation of Sn-based perovskites, a feasible way to improve the device performance is to counter-dope the oxidized Sn-based perovskites by replacing Sn2+ with trivalent cations in the crystal lattice, which however is rarely reported. Here, the introduction of Sb3+, which can effectively counter-dope the oxidized perovskite layer and improve the carrier lifetime, is presented. Meanwhile, Sb3+ can passivate deep-level defects and improve carrier mobility of the perovskite layer, which are all favorable for the photovoltaic performance of the devices. Consequently, the target devices yield a relative enhancement of the power conversion efficiency (PCE) of 31.4% as well as excellent shelf-storage stability. This work provides a novel strategy to improve the performance of Sn-based PSCs, which can be developed as a universal way to compensate for the oxidation of Sn-based perovskites in optoelectronic devices.

Managing Pb-Related Imperfections via Rationally Designed Aniline Derivative with Bilateral Cyano and Acetyl Groups as Lewis Base for High-Efficiency Perovskite Solar Cells Exceeding 24

Pb-related imperfections (surface or halide vacancy induced uncoordinated Pb2+, Pb-I antisite, and Pb2+ vacancy defects) of the ionic crystal perovskite film seriously restrict the photovoltaic performance of perovskite solar cells (PSCs). Here, an aniline derivative N-(4-cyanophenyl)acetamide (CAL) is rationally designed, incorporating bilateral functional sites of cyano and acetyl groups, acting as Lewis base molecule for managing the Pb-related imperfections in perovskite surface through post-treatment. Theoretical calculation and experimental verification together proved the reduced defect density, improved crystallinity, and inhibited ion migration in the CAL-modified perovskite. Precisely, cyano as a side group and acetyl as another side group can both coordinate with Pb2+ for its low electrostatic potential energy. Further, the aniline core and the π-π conjugate structure in the benzene ring of the ligand tend to form a dimer to improve the mobility for carrier transportation and collection. The strategy demonstrates a champion PCE of 24.35% for the air-processed PSCs with over 1200 hours of maximum power point tracking (MPPT) stability. This study presents a comprehensive approach to overcoming the current Pb-related imperfections induced limitations in PSCs, paving the way for their integration into mainstream solar technologies.

Cross-Linkable Fullerene Enables Elastic and Conductive Grain Boundaries for Efficient and Wearable Tin-Based Perovskite Solar Cells

Tin-based perovskite solar cells (TPSCs) have received increasing attention due to their low toxicity, high theoretical efficiency, and potential applications as wearable devices. However, the inherent fast and uncontrollable crystallization process of tin-based perovskites results in high defect density in the film. Meanwhile, when fabricated into flexible devices, the prepared perovskite film exhibits inevitable brittleness and high Young's modulus, seriously weakening the mechanical stability. In this work, we design and synthesize a cross-linkable fullerene, thioctic acid functionalized C60 fulleropyrrolidinium iodide (FTAI), which has multiple interactions with perovskite components and can finely regulate the crystallization quality of perovskite film. The obtained perovskite film shows an increased grain size and a more matched energy level with the electron transport material, effectively improving the carrier extraction efficiency. The FTAI-based rigid device achieves a champion efficiency of 14.91 % with enhanced stability. More importantly, the FTAI located at the perovskite grain boundaries could spontaneously cross-link during the perovskite annealing process, which effectively improves the conductivity and elasticity of grain boundaries, thereby giving the film excellent bending resistance. Finally, the FTAI-based wearable device yields a record efficiency of 12.35 % and displays robust bending durability, retaining about 90 % of the initial efficiency after 10,000 bending times.

Strain engineering improves the photovoltaic performance of carbon-based hole-transport-material free CsPbIBr2 perovskite solar cells

Alkylamines with different chain lengths including n-butylamine, n-hexylamine, and n-octylamine, are applied to regulate the CsPbIBr2 perovskite film quality by strain engineering. The status of residual strains is controllably modulated, resulting in improved efficiency and stability of carbon-based hole-transport-material free CsPbIBr2 perovskite solar cells.

Mitigating Surface Defects in Tin-Based Perovskite Films with α-Tocopherol for Enhanced Photovoltaic Performance

Surface defects in tin-based perovskite films disrupt the periodic arrangement of atoms in crystals, making surface atoms more susceptible to interactions with water and oxygen molecules in the surrounding environment. The diffusion of oxygen ions into the perovskite interior leads to the formation of severe bulk defects, which compromises the performance of tin-based perovskite solar cells (PSCs). As a result, surface defects are recognized as the primary source of degradation and require special attention. In this study, α-Tocopherol (also known as vitamin E) into tin-based perovskite films is introduced. Experimental results show that because of its larger volume, α-Tocopherol does not enter the perovskite lattice. Instead, it forms van der Waals and hydrogen bond interactions with the formamidine ion (FA+) and the [SnI6]4- octahedron at the perovskite terminals. Through α-Tocopherol passivation, both surface and interior oxidation of the perovskite are significantly suppressed as α-Tocopherol firmly embeds itself on the perovskite surface. Density functional theory analysis confirms the inhibition of I─Sn antisite defects (ISn) and Sn interstitial defects (Sni), which possess deep trap states within the bandgap. Ultimately, it is demonstrated that α-Tocopherol enhances the power conversion efficiency (PCE) from 9.19% to 13.14% and prolongs the lifetime of tin-based PSCs to over 50 days.

Building (001) oriented FAPbI3 films for high-performing perovskite solar cells

The solution processed FAPbI3 perovskite usually suffers from chaotic orientations. Herein, a template structure of oriented 2D perovskite is used to obtain a high-quality FAPbI3 film with (001) preferred orientation by cation exchange. The highly oriented BA2PbI4 serves as a growth template and promotes the (001) orientation of the 3D perovskite. The dominantly (001) orientated FAPbI3 perovskite exhibits uniform surface morphology and suppressed film defects.

Interfacial engineering eliminates energy loss at perovskite/HTL junction

Realizing efficient FAPbI3-based devices with high open-circuit voltage (VOC) is still challenging, due to severe energy loss between the n-type perovskite and p-type hole-transporting layer (HTL). Here, we developed a strategy involving controlling the formation of iodine vacancies in order to induce formation of p-type perovskite and hence mitigate such energy loss. Post-deposition of n-butylamine iodide was discovered to induce an n-to-p-type transition in the FAPbI3 perovskite and hence form the p-type perovskite/p-type HTL junction. The resultant device realized a VOC of as high as 1.12 V, a value ∼14.3% higher than that of the corresponding n-type FAPbI3 device (0.98 V).

Breaking the bottleneck of lead-free perovskite solar cells through dimensionality modulation

The emerging perovskite solar cell (PSC) technology has attracted significant attention due to its superior power conversion efficiency (PCE) among the thin-film photovoltaic technologies. However, the toxicity of lead and poor stability of lead halide materials hinder their commercialization. In this case, after a decade of effort, various categories of lead-free perovskites and perovskite-like materials have been developed, including tin halide perovskites, double perovskites, defect-structured perovskites, and rudorffites. However, the performance of the corresponding devices still falls short of expectations, especially their PCE. The limitations mainly originate from either the unstable lattice structure of these materials, which causes the distortion of their octahedra, or their low dimensionality (e.g., structural and electronic dimensionality)-correlated poor carrier transport and self-trapping effect, accelerating nonradiative recombination. Therefore, understanding the relationship between the structures and performance in these emerging candidates and leveraging these insights to design or modify new lead-free perovskites is of great significance. Herein, we review the variety of dimensionalities in different categories of lead-free perovskites and perovskite-like materials and conclude that dimensionality is an important aspect among the crucial indexes that determine the performance of lead-free PSCs. In addition, we summarize the modulation of both structural and electronic dimensionality, and the corresponding enhanced optoelectronic properties in different categories. Finally, perspectives on the future development of lead-free perovskites and perovskite-like materials for photovoltaic applications are provided. We hope that this review will provide researchers with a concise overview of these emerging materials and help them leverage dimensionality to break the bottleneck in photovoltaic applications.

Defect Compensation and Lattice Stabilization Enables High Voltage Output in Tin Halide Perovskite Solar Cells

Tin halide perovskite solar cells (PSCs) are regarded as the most promising lead-free alternatives for photovoltaic applications. However, they still suffer from uncompetitive photovoltaic performance because of the facile Sn2+ oxidation and Sn-related defects. Herein, a defect and carrier management strategy by using diaminopyridine (DP) and 4-bromo-2,6-diaminopyridine (4BrDP) as multifunctional additives for tin halide perovskites is reported. Both DP and 4BrDP induced strong interaction with tin perovskites by coordinate bonding and N─H···I hydrogen bonding, which greatly suppresses the micro-strain and Urbach energy of tin halide perovskite films. The strong hydrogen bonding inhibits the formation of I3 - and related defect density. Meanwhile, the electron-donor species of halogen bond in 4BrDP provides higher reactivity of 2 and 6 sites, which indicates stronger passivation ability with tin halide perovskites. These advances enable a champion power conversion efficiency (PCE) of 13.40% in 4BrDP-processed devices with remarkable improvement in both open-circuit voltage (Voc ) of 881 mV and fill factor (FF) of 71.26%. The 4BrDP devices retain 91% and 82% of the pristine PCE after 2000 h storage in N2 atmosphere and 1000 h under 85 °C, respectively. Therefore, this work provides new insight into molecular design for high-performance and stable lead-free optoelectronics.