Chemical Approach Towards Broadband Spintronics on Nanoscale Pyrene Films

Programmed Heterostructures for Enhanced Electrical Conductivity

Interfacial electron transport in multicomponent systems plays a crucial role in controlling electrical conductivity. Organic-inorganic heterostructures electronic devices where all the entities are covalently bonded to each other can reduce interfacial electrical resistance, thus suitable for low-power consumption electronic operations. Programmed heterostructures of covalently bonded interfaces between ITO-ethynylbenzene (EB) and EB-zinc ferrite (ZF) nanoparticles, a programmed structure showing 67 978-fold enhancement of electrical current as compared to pristine NPs-based two terminal devices are created. An electrochemical approach is adopted to prepare nearly π-conjugated EB oligomer films of thickness ≈26 nm on ITO-electrode on which ZF NPs are chemically attached. A "flip-chip" method is employed to combine two EB-ZnFe2O4 NPs-ITO to probe electrical conductivity and charge conduction mechanism. The EB-ZnFe2O4 NPs exhibit strong electronic coupling at ITO-EB and EB-NPs with an energy barrier of 0.13 eV between the ITO Fermi level and the LUMO of EB-ZF NPs for efficient charge transport. Both the DC and AC-based electrical measurements manifest a low resistance at ITO-EB and EB-ZF NPs, revealing enhanced electrical current at ± 1.5 V. The programmed heterostructure devices can meet a strategy to create well-controlled molecular layers for electronic applications toward miniaturized components that shorten charge carrier distance, and interfacial resistance.

Metal-free platforms for molecular thin films as high-performance supercapacitors

Controlling chemical functionalization and achieving stable electrode-molecule interfaces for high-performance electrochemical energy storage applications remain challenging tasks. Herein, we present a simple, controllable, scalable, and versatile electrochemical modification approach of graphite rods (GRs) extracted from low-cost Eveready cells that were covalently modified with anthracene oligomers. The anthracene oligomers with a total layer thickness of ∼24 nm on the GR electrode yield a remarkable specific capacitance of ∼670 F g-1 with good galvanostatic charge-discharge cycling stability (10 000) recorded in 1 M H2SO4 electrolyte. Such a boost in capacitance is attributed mainly to two contributions: (i) an electrical double-layer at the anthracene oligomer/GR/electrolyte interfaces, and (ii) the proton-coupled electron transfer (PCET) reaction, which ensures a substantial faradaic contribution to the total capacitance. Due to the higher conductivity of the anthracene films, it possesses more azo groups (-N[double bond, length as m-dash]N-) during the electrochemical growth of the oligomer films compared to pyrene and naphthalene oligomers, which is key to PCET reactions. AC-based electrical studies unravel the in-depth charge interfacial electrical behavior of anthracene-grafted electrodes. Asymmetrical solid-state supercapacitor devices were made using anthracene-modified biomass-derived porous carbon, which showed improved performance with a specific capacitance of ∼155 F g-1 at 2 A g-1 with an energy density of 5.8 W h kg-1 at a high-power density of 2010 W kg-1 and powered LED lighting for a longer period. The present work provides a promising metal-free approach in developing organic thin-film hybrid capacitors.

Metal-organic Frameworks in Semiconductor Devices

Metal-organic frameworks (MOFs) are a specific class of hybrid, crystalline, nano-porous materials made of metal-ion-based 'nodes' and organic linkers. Most of the studies on MOFs largely focused on porosity, chemical and structural diversity, gas sorption, sensing, drug delivery, catalysis, and separation applications. In contrast, much less reports paid attention to understanding and tuning the electrical properties of MOFs. Poor electrical conductivity of MOFs (~10-7-10-10 S cm-1), reported in earlier studies, impeded their applications in electronics, optoelectronics, and renewable energy storage. To overcome this drawback, the MOF community has adopted several intriguing strategies for electronic applications. The present review focuses on creatively designed bulk MOFs and surface-anchored MOFs (SURMOFs) with different metal nodes (from transition metals to lanthanides), ligand functionalities, and doping entities, allowing tuning and enhancement of electrical conductivity. Diverse platforms for MOFs-based electronic device fabrications, conductivity measurements, and underlying charge transport mechanisms are also addressed. Overall, the review highlights the pros and cons of MOFs-based electronics (MOFtronics), followed by an analysis of the future directions of research, including optimization of the MOF compositions, heterostructures, electrical contacts, device stacking, and further relevant options which can be of interest for MOF researchers and result in improved devices performance.

Thickness-Dependent Charge Transport in Three Dimensional Ru(II)- Tris(phenanthroline)-Based Molecular Assemblies

We describe here the fabrication of large-area molecular junctions with a configuration of ITO/[Ru(Phen)3]/Al to understand temperature- and thickness-dependent charge transport phenomena. Thanks to the electrochemical technique, thin layers of electroactive ruthenium(II)-tris(phenanthroline) [Ru(Phen)3] with thicknesses of 4-16 nm are covalently grown on sputtering-deposited patterned ITO electrodes. The bias-induced molecular junctions exhibit symmetric current-voltage (j-V) curves, demonstrating highly efficient long-range charge transport and weak attenuation with increased molecular film thickness (β = 0.70 to 0.79 nm-1). Such a lower β value is attributed to the accessibility of Ru(Phen)3 molecular conduction channels to Fermi levels of both the electrodes and a strong electronic coupling at ITO-molecules interfaces. The thinner junctions (d = 3.9 nm) follow charge transport via resonant tunneling, while the thicker junctions (d = 10-16 nm) follow thermally activated (activation energy, Ea ∼ 43 meV) Poole-Frenkel charge conduction, showing a clear "molecular signature" in the nanometric junctions.

Chemically Controlled Reversible Magnetic Phase Transition in Two-Dimensional Organometallic Lattices

Developing an efficient method to reversibly control materials' spin order is urgently needed but challenging in spintronics. Though various physical field control methods have been advancing, the chemical control of spin is little exploited. Here, we propose a chemical means for such spin manipulation, i.e., utilizing the well-known lactim-lactam tautomerization to reversibly modulate the magnetic phase transition in two-dimensional (2D) organometallic lattices. The proposal is verified by theoretically designing several 2D organometallic frameworks with antiferromagnetic to ferrimagnetic spin order transformation modulated by lactim-lactam tautomerization on organic linkers. The transition originates from the change in spin states of organic linkers (from singlet to doublet) via tautomerization. Such a transition further switches materials' electronic structures from normal semiconductors with zero spin polarization to bipolar magnetic semiconductors with valence and conduction band edges 100% spin polarized in opposite spin channels. Moreover, the magnitude of magnetic anisotropy energy also enhances by 5- to 9-fold.