Low noise ultraviolet photodetector with over 100% enhanced lifetime based on polyfluorene copolymer and ZnO nanoparticles

Recent advances in solution-processed photodetectors based on inorganic and hybrid photo-active materials

Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.

Structure design and performance of photomultiplication-type organic photodetectors based on an aggregation-induced emission material

Aggregation-induced emission (AIE) materials have shown attractive prospects in the fields of biological probes, chemical sensing, optoelectronic systems and stimuli responses. Here, we have successfully fabricated photomultiplication-type organic photodetectors based on an AIE material by designing a device structure. The high photoconductive gain was attributed to the interfacial trap-assisted hole-tunneling injection caused by MoO₃ as the trap for electrons. The fabricated AIE-based photomultiplication-type organic photodetectors exhibited the figures of merits of high external quantum efficiency in excess of 60 000%, responsivity of 172 A W^-1, detectivity of 3.08 × 10¹² Jones, and photoresponse with a rise time of 1.69 ms. Moreover, the devices also showed good stability with a half-life of 700 hours at continuous testing under ambient conditions, which makes them one of the most stable OPDs reported so far. The results demonstrate that AIE molecules are an excellent kind of photodetective material.

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p-n Vertical Heterojunction

Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p–n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm⁻² light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 10¹² Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.