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Miah MH, Khandaker MU, Aminul Islam M, Nur-E-Alam M, Osman H, Ullah MH. Perovskite materials in X-ray detection and imaging: recent progress, challenges, and future prospects. RSC Adv 2024; 14:6656-6698. [PMID: 38390503 PMCID: PMC10883145 DOI: 10.1039/d4ra00433g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Accepted: 02/07/2024] [Indexed: 02/24/2024] Open
Abstract
Perovskite materials have attracted significant attention as innovative and efficient X-ray detectors owing to their unique properties compared to traditional X-ray detectors. Herein, chronologically, we present an in-depth analysis of X-ray detection technologies employing organic-inorganic hybrids (OIHs), all-inorganic and lead-free perovskite material-based single crystals (SCs), thin/thick films and wafers. Particularly, this review systematically scrutinizes the advancement of the diverse synthesis methods, structural modifications, and device architectures exploited to enhance the radiation sensing performance. In addition, a critical analysis of the crucial factors affecting the performance of the devices is also provided. Our findings revealed that the improvement from single crystallization techniques dominated the film and wafer growth techniques. The probable reason for this is that SC-based devices display a lower trap density, higher resistivity, large carrier mobility and lifetime compared to film- and wafer-based devices. Ultimately, devices with SCs showed outstanding sensitivity and the lowest detectable dose rate (LDDR). These results are superior to some traditional X-ray detectors such as amorphous selenium and CZT. In addition, the limited performance of film-based devices is attributed to the defect formation in the bulk film, surfaces, and grain boundaries. However, wafer-based devices showed the worst performance because of the formation of voids, which impede the movement of charge carriers. We also observed that by performing structural modification, various research groups achieved high-performance devices together with stability. Finally, by fusing the findings from diverse research works, we provide a valuable resource for researchers in the field of X-ray detection, imaging and materials science. Ultimately, this review will serve as a roadmap for directing the difficulties associated with perovskite materials in X-ray detection and imaging, proposing insights into the recent status, challenges, and promising directions for future research.
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Affiliation(s)
- Md Helal Miah
- Applied Physics and Radiation Technologies Group, CCDCU, School of Engineering and Technology, Sunway University Bandar Sunway 47500 Selangor Malaysia
- Department of Physics, Bangabandhu Sheikh Mujibur Rahman Science and Technology University Gopalganj 8100 Bangladesh
| | - Mayeen Uddin Khandaker
- Applied Physics and Radiation Technologies Group, CCDCU, School of Engineering and Technology, Sunway University Bandar Sunway 47500 Selangor Malaysia
- Faculty of Graduate Studies, Daffodil International University Daffodil Smart City, Birulia, Savar Dhaka 1216 Bangladesh
| | - Mohammad Aminul Islam
- Department of Electrical Engineering, Faculty of Engineering, Universiti Malaya Kuala Lumpur 50603 Selangor Malaysia
| | - Mohammad Nur-E-Alam
- Institute of Sustainable Energy, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN Kajang 43000 Selangor Malaysia
- School of Science, Edith Cowan University 270 Joondalup Drive Joondalup-6027 WA Australia
| | - Hamid Osman
- Department of Radiological Sciences, College of Applied Medical Sciences, Taif University 21944 Taif Saudi Arabia
| | - Md Habib Ullah
- Department of Physics, Faculty of Science and Technology, American International University-Bangladesh 408/1, Kuratoli, Khilkhet Dhaka 1229 Bangladesh
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2
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He X, Deng Y, Ouyang D, Zhang N, Wang J, Murthy AA, Spanopoulos I, Islam SM, Tu Q, Xing G, Li Y, Dravid VP, Zhai T. Recent Development of Halide Perovskite Materials and Devices for Ionizing Radiation Detection. Chem Rev 2023; 123:1207-1261. [PMID: 36728153 DOI: 10.1021/acs.chemrev.2c00404] [Citation(s) in RCA: 25] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
Ionizing radiation such as X-rays and γ-rays has been extensively studied and used in various fields such as medical imaging, radiographic nondestructive testing, nuclear defense, homeland security, and scientific research. Therefore, the detection of such high-energy radiation with high-sensitivity and low-cost-based materials and devices is highly important and desirable. Halide perovskites have emerged as promising candidates for radiation detection due to the large light absorption coefficient, large resistivity, low leakage current, high mobility, and simplicity in synthesis and processing as compared with commercial silicon (Si) and amorphous selenium (a-Se). In this review, we provide an extensive overview of current progress in terms of materials development and corresponding device architectures for radiation detection. We discuss the properties of a plethora of reported compounds involving organic-inorganic hybrid, all-inorganic, all-organic perovskite and antiperovskite structures, as well as the continuous breakthroughs in device architectures, performance, and environmental stability. We focus on the critical advancements of the field in the past few years and we provide valuable insight for the development of next-generation materials and devices for radiation detection and imaging applications.
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Affiliation(s)
- Xiaoyu He
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Yao Deng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Jing Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Akshay A Murthy
- Department of Materials Science and Engineering, Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, International Institute for Nanotechnology (IIN), and Department of Mechanical Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Ioannis Spanopoulos
- Department of Chemistry, University of South Florida, Tampa, Florida33620, United States
| | - Saiful M Islam
- Department of Chemistry, Physics, and Atmospheric Sciences, Jackson State University, Jackson, Mississippi39217, United States
| | - Qing Tu
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas77840, United States
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, SAR999078, People's Republic of China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, International Institute for Nanotechnology (IIN), and Department of Mechanical Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
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3
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Li C, Li J, Li Z, Zhang H, Dang Y, Kong F. High-Performance Photodetectors Based on Nanostructured Perovskites. NANOMATERIALS 2021; 11:nano11041038. [PMID: 33921639 PMCID: PMC8073735 DOI: 10.3390/nano11041038] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2021] [Revised: 04/05/2021] [Accepted: 04/09/2021] [Indexed: 11/16/2022]
Abstract
In recent years, high-performance photodetectors have attracted wide attention because of their important applications including imaging, spectroscopy, fiber-optic communications, remote control, chemical/biological sensing and so on. Nanostructured perovskites are extremely suitable for detective applications with their long carrier lifetime, high carrier mobility, facile synthesis, and beneficial to device miniaturization. Because the structure of the device and the dimension of nanostructured perovskite have a profound impact on the performance of photodetector, we divide nanostructured perovskite into 2D, 1D, and 0D, and review their applications in photodetector (including photoconductor, phototransistor, and photodiode), respectively. The devices exhibit high performance with high photoresponsivity, large external quantum efficiency (EQE), large gain, high detectivity, and fast response time. The intriguing properties suggest that nanostructured perovskites have a great potential in photodetection.
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Affiliation(s)
- Chunlong Li
- Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China; (Z.L.); (H.Z.)
- Correspondence: (C.L.); (Y.D.); (F.K.)
| | - Jie Li
- International College of Optoelectronic Engineering, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250014, China;
| | - Zhengping Li
- Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China; (Z.L.); (H.Z.)
| | - Huayong Zhang
- Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China; (Z.L.); (H.Z.)
| | - Yangyang Dang
- Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, School of Physics and Physical Engineering, Qufu Normal University, Qufu 273100, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin 300072, China
- Correspondence: (C.L.); (Y.D.); (F.K.)
| | - Fangong Kong
- Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education, Qilu University of Technology, Shandong Academy of Sciences, Jinan 250353, China; (Z.L.); (H.Z.)
- Correspondence: (C.L.); (Y.D.); (F.K.)
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4
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Xu Y, Wang X, Pan Y, Li Y, Emeka Elemike E, Li Q, Zhang X, Chen J, Zhao Z, Lei W. Perovskite Photodetectors Based on p-i-n Junction With Epitaxial Electron-Blocking Layers. Front Chem 2020; 8:811. [PMID: 33102436 PMCID: PMC7522216 DOI: 10.3389/fchem.2020.00811] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2020] [Accepted: 08/03/2020] [Indexed: 11/13/2022] Open
Abstract
Organic-inorganic hybrid perovskite single crystals (PSCs) have been emerged as remarkable materials for some optoelectronic applications such as solid-state photodetectors, solar cells and light emitting diodes due to their excellent optoelectronic properties. To decrease the dark current, function layers based on spin-coating method are frequently requested for intrinsic PSCs to block the injected current by forming energy barrier. However, the amorphous function layers suffer from small carrier mobility and high traps density, which limit the speed of the photoelectric response of perovskite devices. This work supposes to grow thick MAPbBr3 and MAPbI3 mono-crystalline thin films on the surface of intrinsic MAPbBr2.5Cl0.5 PSCs substrate by a heteroepitaxial growth technique to act as electron-blocking layers. Meanwhile, C60 and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) layers are deposited on the opposite surface of substrate PSCs by spin-coating method to block injected holes. This Au-MAPbI3-MAPbBr3-MAPbBr2.5Cl0.5PSCs-C60-PCBM-Ag heterostructure can be used as excellent X-ray photodetector (XPD) due to its low dark current density of 6.97 × 10-11 A cm-2 at -0.5 V bias, high responsivity of 870 mA/W at -100 V bias and X-ray sensitivity as high as 59.7 μC mGy-1 cm-2 at -50 V bias.
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Affiliation(s)
- Yubing Xu
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Xin Wang
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Yuzhu Pan
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Yuwei Li
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | | | - Qing Li
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Xiaobing Zhang
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Jing Chen
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Zhiwei Zhao
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Wei Lei
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
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5
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Li C, Huang W, Gao L, Wang H, Hu L, Chen T, Zhang H. Recent advances in solution-processed photodetectors based on inorganic and hybrid photo-active materials. NANOSCALE 2020; 12:2201-2227. [PMID: 31942887 DOI: 10.1039/c9nr07799e] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.
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Affiliation(s)
- Chao Li
- Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Weichun Huang
- College of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, P. R. China
| | - Lingfeng Gao
- Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Huide Wang
- Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Lanping Hu
- College of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, P. R. China
| | - Tingting Chen
- College of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, Jiangsu, P. R. China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
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6
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Li J, Li H, Liu L, Yao H, Tian B, Su C, Zhong H, Wang Y, Zhang L, Shi Y. Post-Treatment of CH 3 NH 3 PbI 3 /PbI 2 Composite Films with Methylamine to Realize High-Performance Photoconductor Devices. Chem Asian J 2019; 14:2861-2868. [PMID: 31298787 DOI: 10.1002/asia.201900644] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2019] [Revised: 07/04/2019] [Indexed: 11/07/2022]
Abstract
Organometallic halide perovskites have attracted great research interest as light-active materials for use in optoelectronics. Here, we report a high-performance photoconductor based on a methylammonium lead iodide (MAPbI3 ) film that was prepared from a methylamine-treated MAPbI3 /PbI2 perovskite film. An ultrahigh responsivity of 3.6 A W-1 and detectivity of 5.4×1012 Jones were obtained for the film under 0.5 mW cm-2 white-light illumination. In addition, under 420 nm light irradiation, the film exhibited its highest responsivity and detectivity of 30 A W-1 and 2.4×1014 Jones, respectively. The excellent photo-response performance results from the improved electronic quality and suppressed nonradiative recombination channels of the treated perovskite thin film.
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Affiliation(s)
- Jieni Li
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Henan Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Lai Liu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.,Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Huizhen Yao
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.,Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Bingbing Tian
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.,Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Chenliang Su
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.,Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Haizhe Zhong
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.,Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Ye Wang
- Key Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Lifu Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.,Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yumeng Shi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.,Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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Xu Z, Li H, Zhao H, Fu Q, Tao H, Wang S, Ma Z, Ding J, Ma Y, Han Y. Optimizing optoelectronic performances by controlling halide compositions of MAPb(ClxI1−x)3 single crystals. CrystEngComm 2019. [DOI: 10.1039/c9ce00538b] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Abstract
This article aims at investigating the structures of iodide/chloride mixed-halide perovskites and correlating the I : Cl ratio with their optoelectronic performances.
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Affiliation(s)
- Zhiwen Xu
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials
- Wuhan Institute of Technology
- Wuhan 430205
- China
| | - Huadong Li
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials
- Wuhan Institute of Technology
- Wuhan 430205
- China
| | - Hongyang Zhao
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials
- Wuhan Institute of Technology
- Wuhan 430205
- China
| | - Qiuming Fu
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials
- Wuhan Institute of Technology
- Wuhan 430205
- China
| | - Hong Tao
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials
- Wuhan Institute of Technology
- Wuhan 430205
- China
| | - Shenggao Wang
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials
- Wuhan Institute of Technology
- Wuhan 430205
- China
| | - Zhibin Ma
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials
- Wuhan Institute of Technology
- Wuhan 430205
- China
- Huanggang Normal University
| | - Jianxu Ding
- College of Materials Science and Engineering
- Shandong University of Science and Technology
- Qingdao 266590
- China
| | - Yongfu Ma
- Wuhan National High Magnetic Field Center and School of Physics
- Huazhong University of Science and Technology
- Wuhan 430074
- China
| | - Yibo Han
- Wuhan National High Magnetic Field Center and School of Physics
- Huazhong University of Science and Technology
- Wuhan 430074
- China
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Abstract
While the field of perovskite-based optoelectronics has mostly been dominated by photovoltaics, light-emitting diodes, and transistors, semiconducting properties peculiar to perovskites make them interesting candidates for innovative and disruptive applications in light signal detection. Perovskites combine effective light absorption in the broadband range with good photo-generation yield and high charge carrier mobility, a combination that provides promising potential for exploiting sensitive and fast photodetectors that are targeted for image sensing, optical communication, environmental monitoring or chemical/biological detection. Currently, organic-inorganic hybrid and all-inorganic halide perovskites with controlled morphologies of polycrystalline thin films, nano-particles/wires/sheets, and bulk single crystals have shown key figure-of-merit features in terms of their responsivity, detectivity, noise equivalent power, linear dynamic range, and response speed. The sensing region has been covered from ultraviolet-visible-near infrared (UV-Vis-NIR) to gamma photons based on two- or three-terminal device architectures. Diverse photoactive materials and devices with superior optoelectronic performances have stimulated attention from researchers in multidisciplinary areas. In this review, we provide a comprehensive overview of the recent progress of perovskite-based photodetectors focusing on versatile compositions, structures, and morphologies of constituent materials, and diverse device architectures toward the superior performance metrics. Combining the advantages of both organic semiconductors (facile solution processability) and inorganic semiconductors (high charge carrier mobility), perovskites are expected to replace commercial silicon for future photodetection applications.
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Affiliation(s)
- Huan Wang
- Department of Chemistry and Nano Science, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul 03760, Korea.
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Tian W, Zhou H, Li L. Hybrid Organic-Inorganic Perovskite Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13. [PMID: 28895306 DOI: 10.1002/smll.201702107] [Citation(s) in RCA: 119] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2017] [Revised: 07/28/2017] [Indexed: 05/15/2023]
Abstract
Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field.
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Affiliation(s)
- Wei Tian
- College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Huanping Zhou
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| | - Liang Li
- College of Physics, Optoelectronics and Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
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