A Lead‐free Organicnorganic Halide Perovskite Absorber with Photoconductive Response

Influence of interaction between organic cation and inorganic unit in bi-based hybrid perovskites for photoelectronic properties

With the increase of the passion on lead-free perovskites, more and more endeavor focused on halobismuthates. Here, we have introduced the p-iodoaniline and p-phenylenediamine into Bi-based hybrid materials, and two photoactive iodobismuthate named p-phenylenediamine iodobismuthate (PDABI) and p-iodoaniline iodobismuthate (PIDBI) were prepared. Their single structures, band gaps, thermostability and other properties were explored. The structure results revealed that they all have 1D BiI₄ ^- anion chains with edge-shared BiI₆ octahedron. The DFT result revealed that PIDBI had an inherent interaction between the I substituent in p-iodoaniline cation and the Bi atom in inorganic BiI₄ ^- anion chains. The photodetector assembled by PDABI and PIDBI revealed that the interaction provided by symmetric p-phenylenediamine has a positive effect on PIDBI's optoelectronic properties compared to the role of asymmetric p-iodoaniline in PDABI.

Evaporation crystallization of zero-dimensional guanidinium bismuth iodide perovskite single crystal for X-ray detection

We synthesized zero-dimensional (0D) lead-free guanidinium bismuth iodide ((Gua)3Bi2I9) single crystals via an antisolvent-assisted evaporation crystallization method, and exploited their potential X-ray detection merits.

Low power consumption photoelectric coupling perovskite memristor with adjustable threshold voltage

Organic-inorganic halide perovskites (OHPs) have been proven to possess unique optical and electrical properties, and achieved more extensive application as excellent materials for memristors in recent years. Based on the traditional OHP-based memristors, the intermediate layer of the memristor was prepared using yttrium oxide (Y₂O₃)/OHP stacking structure in this manuscript. The potential barrier between Y₂O₃and perovskite is relatively high (ΔE_C = 2.13 eV) which leads to comparatively low current of the memristor, thus the power consumption can be reduced. Besides, by changing the external light conditions, one can realize sharp or slow switch between high resistance state (HRS) and low resistance state (LRS), so as to meet the requirement of multilevel data storage, which indicates its promising application prospect in information storage and biological simulation. In addition, based on characteristics of photoelectric coupling, the Y₂O₃/OHP memristor can also achieve the advantage of adjustable threshold voltage. The transition of HRS and LRS can be realized by changing the illumination condition at any voltage, which means the set and reset voltage are not fixed, so that the memristor with adjustable threshold voltage can adapt to various working conditions.