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For: Barman BK, Khatua M, Goswami B, Samanta S, Vijayaraghavan RK. Irreversible Resistive State Switching in Devices with a Homoleptic Cobalt(II) Complex Active Layer. Chem Asian J 2021;16:1545-1552. [PMID: 33871144 DOI: 10.1002/asia.202100152] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2021] [Revised: 04/12/2021] [Indexed: 02/02/2023]
Number Cited by Other Article(s)
1
Goswami B, Khatua M, Devi A, Hans S, Chatterjee R, Samanta S. Ligand redox controlled amine dehydrogenation and imine hemilability in singlet diradical azo-aromatic Ni(II) complexes: characterization of the electron transfer series of azo-imine complexes of Ni(II). Dalton Trans 2024;53:10250-10260. [PMID: 38829194 DOI: 10.1039/d3dt03414c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
2
Kamboj N, Betal A, Majumder M, Sahu S, Metre RK. Redox Switching Behavior in Resistive Memory Device Designed Using a Solution-Processable Phenalenyl-Based Co(II) Complex: Experimental and DFT Studies. Inorg Chem 2023;62:4170-4180. [PMID: 36848532 DOI: 10.1021/acs.inorgchem.2c04264] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/01/2023]
3
Zhang C, Chen M, Wang G, Teng M, Ling S, Wang Y, Su Z, Gao K, Yang X, Ma C, Li Y, Zhang Q. Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex. CHINESE J CHEM 2022. [DOI: 10.1002/cjoc.202200301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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