The Rise of Infrared Nonlinear Optical Pnictides: Advances and Outlooks

EuSi7P10: An Inorganic Supramolecular Nonlinear Optical Crystal Exhibiting Strong Second-Harmonic Generation Response

Inorganic supramolecular compounds are the emergent class of infrared (IR) nonlinear optical (NLO) materials. However, the reported inorganic supramolecular IR NLO pnictides are still scarce. In this work, a new inorganic supramolecular IR NLO phosphide, EuSi7P10, has been synthesized using the metal salt flux method. The structure of EuSi7P10 features an anionic host framework containing the oriented [Si7P16] dual-T2 supertetrahedra with the guest Eu2+ cations filling in the intervals. Additionally, EuSi7P10 exhibits strong phase-matched (PM) second-harmonic generation (SHG) (4.0 × AgGaS2), large birefringence (0.087 @2050 nm), and wide infrared transparency. This study highlights the potential of inorganic supramolecular pnictides for exploring high-performance IR NLO crystals.

Structural strategy for advancing nonlinear optical effects in 1D-[MX2]∞ chains: internal distortion and atomic types

This work aimed to alleviate the limitations of existing mid-infrared nonlinear-optics (MIR-NLO) crystals by conducting theoretical research on 1D-[MX2]∞ (1D = one-dimensional; M = metallic element; X = anionic element) structures in relation to NLO. An analysis was conducted on the electronic structure and optical properties of six selenides (BaZnGeSe4, KxBa1-x/2Ga2Se4, KxBa1-x/2GayIn2-ySe4, KxBa1-x/2In2Se4, BaZnSiSe4, SrZnSiSe4) and three arsenides (Cs2SnAs2, Rb2SnAs2, K2SnAs2) using first principles. Afterwards, the inherent characteristics of these 1D-[MX2]∞ chains were further examined. The calculation results suggest that the presence of internal distortion (non-centrosymmetric) and high electronegativity in M elements can greatly enhance the NLO capability of 1D-[MX2]∞ structures. Furthermore, the first-ever prediction of K2SnAs2's NLO ability has been made. Ultimately, the establishment of a theoretical structure (K2BaSn2As4) provides guidance for the subsequent creation of high-performance MIR-NLO crystals.

Rare-earth-based chalcogenides and their derivatives: an encouraging IR nonlinear optical material candidate

With the continuous development of laser technology and the increasing demand for lasers of different frequencies in the infrared (IR) spectrum, research on infrared nonlinear optical (NLO) crystals has garnered growing attention. Currently, the three main commercially available types of borate materials each have their drawbacks, which limit their applications in various areas. Rare-earth (RE)-based chalcogenide compounds, characterized by the unique f-electron configuration, strong positive charges, and high coordination numbers of RE cations, often exhibit distinctive optical responses. In the field of IR-NLO crystals, they have a research history spanning several decades, with increasing interest. However, there is currently no comprehensive review summarizing and analyzing these promising compounds. In this review, we categorize 85 representative examples out of more than 400 non-centrosymmetric (NCS) compounds into four classes based on the connection of different asymmetric building motifs: (1) RE-based chalcogenides containing tetrahedral motifs; (2) RE-based chalcogenides containing lone-pair-electron motifs; (3) RE-based chalcogenides containing [BS3] and [P2Q6] motifs; and (4) RE-based chalcohalides and oxychalcogenides. We provide detailed discussions on their synthesis methods, structures, optical properties, and structure-performance relationships. Finally, we present several favorable suggestions to further explore RE-based chalcogenide compounds. These suggestions aim to approach these compounds from a new perspective in the field of structural chemistry and potentially uncover hidden treasures within the extensive accumulation of previous research.

Nonlinear Optical Phosphide CuInSi2P4: The Inaugural Member of Diamond-Like Family I-III-IV2-V4 Inspired by ZnGeP2

Noncentrosymmetric phosphides have garnered significant attention as promising systems of infrared (IR) nonlinear optical (NLO) materials. Herein, a new quaternary diamond-like phosphide family I-III-IV2-V4 and its inaugural member, namely, CuInSi2P4 (CISP), were successfully fabricated by isovalent and aliovalent substitution based on ZnGeP2. First-principles calculations revealed that CISP has a large NLO coefficient (d14 = 110.8 pm/V), which can be attributed to the well-aligned tetrahedral [CuP4], [InP4], and [SiP4] units. Remarkably, the extremely small thermal expansion anisotropy (0.09) of CISP enables it to exhibit a considerable laser-induced damage threshold (LIDT, 5.0 × AgGaS2@1.06 μm) despite the relatively narrow band gap (0.81 eV). This work improves the chemical diversity of inorganic phosphide and promotes the development of phosphide systems, which may provide valuable perspectives for future exploration of IR NLO materials.

Ag4SnGe2S7: A Noncentrosymmetric Chalcogenide in I4-II-IV2-VI7 System with Non-Diamond-Like Structure Featuring 1D ∞[SnGe2S8]6- Infinite Chain

The I₄-II-IV₂-VI₇ metal chalcogenide system has become an attractive research system because of its excellent physical and chemical properties. Here, we report the discovery of a new Sn^II-based quaternary chalcogenide in the I₄-II-IV₂-VI₇ system, Ag₄SnGe₂S₇, with a non-diamond-like structure and crystallizing in the Cc space group. The compound is characterized by isolated pyramid-like [SnS₃] units and one-dimensional _∞[SnGe₂S₈]^6- infinite chains with two orientations formed by the corner-sharing connected [SnGe₂S₈]^6- units. It has a band gap of 2.40 eV and is insensitive to air and moisture.

Quaternary Noncentrosymmetric Rare-Earth Sulfides Ba4RE2Cd3S10 (RE = Sm, Gd, or Tb): A Joint Experimental and Theoretical Investigation

Multinary rare-earth chalcogenides with d-block transition metals have attracted considerable attention owing to their intriguing structural architectures and promising practical applications. In this work, three quaternary rare-earth sulfides, Ba₄RE₂Cd₃S₁₀ (RE = Sm, Gd, or Tb), have been obtained by the high-temperature solid-state method. These compounds are isostructural and belong to the noncentrosymmetric orthorhombic space group Cmc2₁ (No. 36). The basic structural unit contains unique two-dimensional anionic [RE₂Cd₃S₁₀]^8- layers, which are separated by Ba²⁺ cations. Remarkably, Ba₄Sm₂Cd₃S₁₀ exhibits a high second-harmonic-generation intensity (1.8 times that of AgGaS₂) and a significantly higher laser-induced damage threshold (14.3 times that of AgGaS₂), which is the first case possessing an infrared (IR) nonlinear optical (NLO) property in the quaternary AE/RE/TM/Q (AE = alkaline-earth metals; RE = rare-earth metals; TM = d-block transition metals; and Q = chalcogen) systems. Moreover, theoretical investigations of the structure-property relationship indicate that the combined action of various types of NLO-active units makes the main contribution to the SHG activity. This discovery may shed light on broadening the frontiers of IR-NLO materials.

Add a Pinch of Tetrel: The Transformation of a Centrosymmetric Metal into a Nonsymmorphic and Chiral Semiconductor

Centrosymmetric skutterudite RhP₃ was converted to a nonsymmorphic and chiral compound RhSi_0.3P_2.7 (space group P2₁2₁2₁) by means of partial replacement of Si for P. The structure, determined by a combination of X‐ray crystallography and solid state ³¹P NMR, exhibits branched polyanionic P/Si chains that are unique among metal phosphides. A driving force to stabilize the locally noncentrosymmetric cis‐RhSi₂P₄ and fac‐RhSi₃P₃ fragments is π‐electron back‐donation between the Rh t_2g‐type orbitals and the unoccupied antibonding Si/P orbitals, which is more effective for Si than for P. In situ studies and total energy calculations revealed the metastable nature of RhSi_0.3P_2.7. Electronic structure calculations predicted centrosymmetric cubic RhP₃ to be metallic which was confirmed by transport properties measurements. In contrast, the electronic structure for chiral orthorhombic RhSi_0.3P_2.7 contained a bandgap, and this compound was shown to be a narrow gap semiconductor.

Ba2Ge2Te5: a ternary NLO-active telluride with unusual one-dimensional helical chains and giant second harmonic-generation tensors

The linear-optical and NLO properties of a ternary NLO-active telluride, Ba2Ge2Te5, were investigated systematically at the experimental and theoretical levels for the first time.