Solution-processed Tetrafluoroborate-capped In2 O3 Nanocrystal Thin-Film Transistors

Effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide nanocrystal thin films: a comparative study with oleic acid, benzoic acid, and 4-aminobenzoic acid

The effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide (In2O3) nanocrystals (NCs) was investigated using oleic acid (OA), benzoic acid (BA), and 4-aminobenzoic acid (4ABA). The NCs were deposited on SiO2/Si wafers for electron mobility measurements using a field effect transistor device, and the annealing temperature (TAnn) was varied from 150 to 350 °C. At TAnn = 200 °C, the electron mobility of the BA-capped In2O3 NC thin film was greater than that of 4ABA-capped In2O3 NCs, while the opposite trend was observed at TAnn = 250 °C. This difference can be attributed, at the lower annealing temperature, to the π-π interaction in the BA-capped In2O3 NC thin film, which is hindered in the ABA-capped In2O3 NC thin film owing to its -NH2 group. At higher annealing temperature, NN bond formation in the ABA-capped In2O3 NC thin film confirmed by Raman spectroscopy plays a key role even after significant thermal decomposition of the ligands in the In2O3 NC thin films. At TAnn = 250 °C, the reorganization energy of BA- or 4ABA-capped In2O3 NCs estimated in the framework of Marcus theory was very similar to each other, indicating that the ligands decompose almost completely, as confirmed by Fourier transform infrared spectroscopy (FT-IR) and thermogravimetric analysis (TGA). The electronic structure was studied by energy-resolved electrochemical impedance spectroscopy (ER-EIS) after annealing the NCs on ITO electrodes at TAnn = 150 °C, 200 °C, or 250 °C. The valence band peak was observed near -6.8 eV for the BA- or 4ABA-capped In2O3 NC films at TAnn =150 °C or 200 °C, but not at TAnn =250 °C. However, for the OA-capped In2O3 NCs, the peak near -6.8 eV was observed for all annealing conditions. Considering the exclusive perseverance of the carboxylate group in the OA-capped In2O3 NCs even at TAnn = 250 °C, as confirmed by FT-IR and TGA, one attributes the peak at -6.8 eV to an electronic state formed by the electronic interaction between the In2O3 NC and the carboxylate groups.

Controlling the Surface of Aluminum Nanocrystals: From Aluminum Oxide to Aluminum Fluoride

Aluminum nanocrystals are emerging as a promising alternative to silver and gold for various applications ranging from plasmonic functionalities to photocatalysis and as energetic materials. Such nanocrystals often exhibit an inherent surface oxidation layer, as aluminum is highly reactive. Its controlled removal is challenging but required, as it can hinder the properties of the encaged metal. Herein, two wet-chemical colloidal approaches toward the surface coating of Al nanocrystals, which afford control over the surface chemistry of the nanocrystals and the oxide thickness, are presented. The first approach utilizes oleic acid as a surface ligand by its addition toward the end of the Al nanocrystals synthesis, and the second approach is the post-synthesis treatment of Al nanocrystals with NOBF4 , in a "wet" colloidal-based approach, which is found to etch and fluorinate the surface oxides. As surface chemistry is an important handle for controlling materials' properties, this research paves a path for manipulating Al nanocrystals while promoting their utilization in diverse applications.

Electronic Coupling in π-Conjugated Molecule-Bridged Silicon Quantum Dot Clusters Synthesized by Sonogashira Cross-Coupling Reaction

π-Conjugated molecule-bridged silicon quantum dot (Si QD) clusters were first synthesized by Sonogashira cross-coupling reaction between 4-ethynylstyryl and octyl co-capped Si QDs (4-Es/Oct Si QDs) and 2,5-dibromo-3-hexylthiophene. The formation of Si QD clusters was confirmed by field emission transmission electron microscopy. The electronic coupling between the QDs in the Si QD cluster is significantly enhanced as compared with that for 4-Es/Oct Si QDs, which is verified from the red shift in ultraviolet-visible absorption and photoluminescence spectra of the Si QD cluster with the possibility of exciton transport, the increased charging effect found in the core-level photoemission spectra, the shift to lower binding energy of the valence band photoemission spectrum, and more decisively, the increase in electrical conductance of the Si QD cluster thin film. To investigate the physical origin of the temperature dependence of the electrical conductance, we have merged the microscopic viewpoint, Marcus theory, on the electron transfer (W) between the adjacent QDs, with macroscopic concepts, such as the conductance (G), mobility (μ), and diffusion coefficient (D). The effective reorganizational energies of charge transfer between the neighboring Si QDs in 4-Es/Oct Si QD and Si QD cluster thin films are estimated to be 170 and 140 meV, respectively, while the ratio of the effective electronic coupling of the latter to that of the former is determined to be 7.3:1.