Significantly Enhanced Charge Separation in Rippled Monolayer Graphitic C 3 N 4

Oxygen doping through oxidation causes the main active substance in g-C3N4 photocatalysis to change from holes to singlet oxygen

Improving the photocatalytic activity of graphitic carbon nitride (g-C₃N₄) for organic pollutant removal from water and in-depth study of the effect of oxygen doping on its photocatalytic mechanism are deserving of research attention. Oxygen-doped g-C₃N₄ with a suitable degree of oxidation was prepared by oxidation using concentrated acid-ultrasound double oxidation. Oxygen doping by oxidation changed the physical and chemical properties of g-C₃N₄, and improved its rhodamine B photocatalytic degradation efficiency. The physical and chemical properties of g-C₃N₄ were characterized by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and zeta potential analysis, among other methods. The photocatalytic mechanism was also studied in depth using photoluminescence, electrochemical impedance spectroscopy, transient photocurrent measurements, diffuse reflectance spectroscopy, and Mott-Schottky plots. An appropriate degree of oxidation introduced pit-like defects rich in oxygen-containing functional groups onto the g-C₃N₄ surface, which improves its photocatalytic performance. Furthermore, in the photocatalytic process of oxidized g-C₃N₄, oxygen doping was confirmed to change the main active substance of g-C₃N₄ photocatalysis from holes to singlet oxygen. This study provides an in-depth explanation of the photocatalytic mechanism of g-C₃N₄ doped with oxygen, which provides guidance and reference for the design of photocatalysts for organic pollutant removal from water and the analysis of photocatalytic mechanisms for water treatment.

Spin Polarization-Induced Facile Dioxygen Activation in Boron-Doped Graphitic Carbon Nitride

Dioxygen (O₂) activation is a vital step in many oxidation reactions, and a graphitic carbon nitride (g-C₃N₄) sheet is known as a famous semiconductor catalytic material. Here, we report that the atomic boron (B)-doped g-C₃N₄ (B/g-C₃N₄) can be used as a highly efficient catalyst for O₂ activation. Our first-principles results show that O₂ can be easily chemisorbed at the B site and thus can be highly activated, featured by an elongated O-O bond (∼1.52 Å). Interestingly, the O-O cleavage is almost barrier free at room temperatures, independent of the doping concentration. It is revealed that the B atom can induce considerable spin polarization on B/g-C₃N₄, which accounts for O₂ activation. The doping concentration determines the coupling configuration of net-spin and thus the magnitude of the magnetism. However, the distribution of net-spin at the active site is independent of the doping concentration, giving rise to the doping concentration-independent catalytic capacity. The unique monolayer geometry and the existing multiple active sites may facilitate the adsorption and activation of O₂ from two sides, and the newly generated surface oxygen-containing groups can catalyze the oxidation coupling of methane to ethane. The present findings pave a new way to design g-C₃N₄-based metal-free catalysts for oxidation reactions.