Inorganic SnIP-Type Double Helices in Main-Group Chemistry

Chirality-Induced Propagation Velocity Asymmetry

The spin-dependent propagation of electrons in helical nanowires is investigated. We show that the interplay of spin angular momentum and nanowire chirality, under spin-orbit interaction, lifts the symmetry between left and right propagating electrons, giving rise to a velocity asymmetry. The study is based on a microscopic tight-binding model that takes into account the spin-orbit interaction. The continuity equation for the spin-dependent probability density is derived, including the spin nonconserving terms, and quantum dynamics calculations are performed to obtain the electron propagation dynamics. The calculations are applied to the inorganic double-helix SnIP, a quasi-1D material that constitutes a semiconductor with a band gap of ∼1.9 eV. The results, nevertheless, have general validity due to symmetry considerations. The relation of the propagation velocity asymmetry with the phenomena ascribed to the chiral-induced spin selectivity effect is examined.

Ultrafast Photoconductivity and Terahertz Vibrational Dynamics in Double-Helix SnIP Nanowires

Tin iodide phosphide (SnIP), an inorganic double-helix material, is a quasi-1D van der Waals semiconductor that shows promise in photocatalysis and flexible electronics. However, the understanding of the fundamental photophysics and charge transport dynamics of this new material is limited. Here, time-resolved terahertz (THz) spectroscopy is used to probe the transient photoconductivity of SnIP nanowire films and measure the carrier mobility. With insight into the highly anisotropic electronic structure from quantum chemical calculations, an electron mobility as high as 280 cm²   V^-1 s^-1 along the double-helix axis and a hole mobility of 238 cm²   V^-1 s^-1 perpendicular to the double-helix axis are detected. Additionally, infrared-active (IR-active) THz vibrational modes are measured, which shows excellent agreement with first-principles calculations, and an ultrafast photoexcitation-induced charge redistribution is observed that reduces the amplitude of a twisting mode of the outer SnI helix on picosecond timescales. Finally, it is shown that the carrier lifetime and mobility are limited by a trap density greater than 10¹⁸  cm^-3 . The results provide insight into the optical excitation and relaxation pathways of SnIP and demonstrate a remarkably high carrier mobility for such a soft and flexible material, suggesting that it could be ideally suited for flexible electronics applications.

Atomic and electronic structure of solids of Ge2Br2PN, Ge2I2PN, Sn2Cl2PN, Sn2Br2PN and Sn2I2PN inorganic double helices: a first principles study

We report the results of density functional theory calculations on the atomic and electronic structure of solids formed by assembling A₂B₂PN (A = Ge and Sn, B = Cl, Br, and I) inorganic double helices.

Atomic structure and electronic properties of A2B2XY (A = Si-Pb, B = Cl-I, and XY = PN and SiS) inorganic double helices: first principles calculations

We study the structural stability and electronic properties of new classes of DNA-like inorganic double helices of the type A2B2XY (A = Si-Pb, B = Cl-I, and XY = PN and SiS) by employing first principles density functional theory (DFT) calculations including van der Waals interactions. In these quaternary double helices PN or SiS forms the inner helix while the AB helix wraps around the inner helix and the two are interconnected. We find that the bromides and iodides of Ge, Sn, and Pb as well as Pb2Cl2PN form structurally stable double helices while Ge2I2SiS as well as bromides and iodides of Sn and Pb have stable double helices. The atomic structures of different double helices have been analyzed in detail to understand the stability of these systems as there is up to about 80% difference in the interatomic distances in the two helices which is remarkable. Also in these new classes of double helices there is polar covalent bonding in the inner helix due to heteroatoms. We have calculated the DDEC6 partial atomic charges and bond orders which suggest strong covalent bonding in the inner helix. The electronic structure reveals that these double helices are semiconducting and in many cases the band gap is direct. Furthermore, we have studied the effects of doping and found that hole doping is the most appropriate way to tuning their electronic properties.