End-Capping π-Conjugated Systems with Medium-Sized Sulfur-Containing Rings: A Route Towards Solution-Processable Air-Stable Semiconductors

Late-stage modification of π-electron systems based on asymmetric oxidation of a medium-sized sulfur-containing ring

The asymmetric oxidation of a sulfur-containing nine-membered heterocycle was achieved for the late-stage introduction of chirality to the substituents of π-electron systems. The oxidation of the sulfur atom considerably influenced the phase-transition behaviour and crystallinity of the resulting π-electron systems.

Acid-Catalyzed Cascade Reaction of 2-Alkylfurans with α,β-Unsaturated Ketones: A Shortcut to 2,3,5-Trisubstituted Furans

The convergent one-pot method toward trisubstituted furans has been developed. The key transformation behind the synthetic protocol comprises the cascade acid-catalyzed conjugated addition of furans to commercially available or easily accessible α,β-unsaturated ketones followed by the rearrangement of the intermediate Michael adducts into isomeric furans. The prospect of utilizing the target products as building blocks for the preparation of potential functional molecules for organic electronics has been demonstrated.

Photo-/Thermal-Responsive Field-Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

It is shown that the semiconducting performance of field-effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole-quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound (p-NO₂ -HABI). A photo-/thermal-responsive FET with a blend thin film of PDPP4T and p-NO₂ -HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10⁶ -fold at V_G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3-hexyl thiophene)), PBTTT (poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole-dithienothiophene)). It is hypothesized that TPIRs (2,4,5-triphenylimidazolyl radicals) formed from p-NO₂ -HABI after UV light irradiation can interact with charge defects at the gate dielectric-semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p-NO₂ -HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET-based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON-state and OFF-state.

A Modular Approach to Phosphorescent π-Extended Heteroacenes

A modular route to previously inaccessible classes of ring-fused π-extended heteroacenes bearing the heavy inorganic element tellurium (Te) is presented. These new materials can be viewed as n-doped analogs of molecular graphene subunits that exhibit color tunable visible light phosphorescence in the solid state and in the presence of air. The general mechanism of phosphorescence in these systems was probed experimentally and computationally via time-dependent density functional theory (TD-DFT). The incorporation of Te into π-extended oligoacene frameworks was achieved by an efficient Zr/Te transmetalation protocol; related zirconium-element exchange reactions have been used to prepare both electron-rich and electron-deficient heterocycles containing different elements from throughout the p-block. Therefore, the current study provides a clear path to incorporate inorganic elements into heteroacenes of greater complexity and side group selectivity compared to existing synthetic routes.