Butterfly-Like Triarylamines with High Hole Mobility and On/Off Ratio in Bottom-Gated OFETs

Tweaking the Non-Volatile Write-Once-Read-Many-Times (WORM) Memory using Donor-Acceptor Architecture with Isatin as Core Acceptor

Organic memory devices have attracted attention because they promise flexible electronics, low manufacturing costs, and compatibility with large-scale integration. A series of new D-A architectures were synthesized employing different donor groups and the isatin moiety as the acceptor through Suzuki-Miyaura coupling reactions. Strong intramolecular interactions were observed in the synthesized compounds, further corroborated by an optimal bandgap. The SEM investigation confirmed good molecular ordering and superior thin film surface coverage. All the compounds demonstrated notable binary Write-Once-Read-Many-Times (WORM) memory behaviour. The threshold switching voltage for these D-A systems ranged from -0.79 to -2.37 V, with the compound having isobutyl substituent showing the lowest threshold voltage and maximum ON/OFF ratio of 102, thus outperforming others. The combined effects of charge transfer and charge trapping are responsible for the resistive switching mechanism prevailing in these systems. The alterations in D-A molecules that affect molecular packing, thin film morphology, and, finally, the memory performance of the active layer are highlighted in this work.

Design, synthesis, and application in OFET of a small molecule based on π-expanded fused diketopyrrolopyrrole

Diketopyrrolopyrrole (DPP) and its derivatives, as electron deficient units, are widely used as building blocks in organic field-effect transistors, obtaining high performance. However, further modification of the DPP structure is crucial for the development of organic semiconductors. In this work, an FDPP is synthesized and characterized. The results show that FDPP exhibited not only a good planar core structure with a good conjugation system, but also strong aggregation in the solid state. As a consequence, FDPP presents p-type behavior with a hole mobility of ∼9.7 × 10-3 cm2 V-1 s-1. This study suggests that FDPP is a promising electron deficient unit for high performance semiconductors.

Performance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide Electrode

Vertical organic field-effect transistors (VOFETs) with a large current on/off ratio and easy fabrication process are highly desirable for future organic electronics. In this paper, we proposed an ultrathin p-type copper (II) phthalocyanine (CuPc) interfacial layer in reduced graphene oxide (rGO)-based VOFETs. The CuPc interfacial layer was sandwiched between the rGO electrode and the N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) organic layer. The introduced CuPc interfacial layer not only decreased the off-current density of the device but also slightly enhanced the on-current density. The threshold voltage of the device was also effectively improved and stabilized at around 0 V. The obtained device exhibited a current on/off ratio exceeding 106, which is the largest value reported for rGO-based VOFETs. The vertical electron mobility of the PTCDI-C8 layer estimated by the space-charge-limited current technique was 1.14 × 10-3 cm2/(V s). However, it was not the main limiting factor for the current density in this device. We totally fabricated 48 devices, and more than 75% could work. Besides, the device was stable with little performance degradation after 1 month. The use of low-cost, solution-processable rGO as work-function-tunable electrode and the application of an ultrathin CuPc interfacial layer in VOFETs may open up opportunities for future organic electronics.