Sensitized Emission from Lanthanide-Doped Nanoparticles Embedded in a Semiconductor Sol–Gel Thin Film

Capping ligand infrared absorption and dopant photoluminescence spectroscopy provides a comprehensive picture to probe dopant spatial location in semiconductor nanoparticles

A room temperature based spectroscopic analysis technique assesses the luminescence properties from different spatial location of lanthanide cations in zinc sulfide nanoparticles.

Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

A Post-synthetic Modification of II-VI Nanoparticles to Create Tb3+ and Eu3+ Luminophores

We describe a novel method for creating luminescent lanthanide-containing nanoparticles in which the lanthanide cations are sensitized by the semiconductor nanoparticle's electronic excitation. In contrast to previous strategies, this new approach creates such materials by addition of external salt to a solution of fully formed nanoparticles. We demonstrate this post-synthetic modification for the lanthanide luminescence sensitization of two visible emitting lanthanides (Ln), Tb³⁺ and Eu³⁺ ions, through ZnS nanoparticles in which the cations were added post-synthetically as external Ln(NO₃)₃·xH₂O salt to solutions of ZnS nanoparticles. The post-synthetically treated ZnS nanoparticle systems display Tb³⁺ and Eu³⁺ luminescence intensities that are comparable to those of doped Zn(Ln)S nanoparticles, which we reported previously (J. Phys. Chem. A, 2011, 115, 4031-4041). A comparison with the synthetically doped systems is used to contrast the spatial distribution of the lanthanide ions, bulk versus surface localized. The post-synthetic strategy described in this work is fundamentally different from the synthetic incorporation (doping) approach and offers a rapid and less synthetically demanding protocol for Tb³⁺:ZnS and Eu³⁺:ZnS luminophores, thereby facilitating their use in a broad range of applications.

Upconversion fluorescent nanoparticles as a potential tool for in-depth imaging

Upconversion nanoparticles (UCNs) are nanoparticles that are excited in the near infrared (NIR) region with emission in the visible or NIR regions. This makes these particles attractive for use in biological imaging as the NIR light can penetrate the tissue better with minimal absorption/scattering. This paper discusses the study of the depth to which cells can be imaged using these nanoparticles. UCNs with NaYF(4) nanocrystals doped with Yb(3+), Er(3+) (visible emission)/Yb(3+), Tm(3+) (NIR emission) were synthesized and modified with silica enabling their dispersion in water and conjugation of biomolecules to their surface. The size of the sample was characterized using transmission electron microscopy and the fluorescence measured using a fluorescence spectrometer at an excitation of 980 nm. Tissue phantoms were prepared by reported methods to mimic skin/muscle tissue and it was observed that the cells could be imaged up to a depth of 3 mm using the NIR emitting UCNs. Further, the depth of detection was evaluated for UCNs targeted to gap junctions formed between cardiac cells.

Lanthanide sensitization in II-VI semiconductor materials: a case study with terbium(III) and europium(III) in zinc sulfide nanoparticles

This work explores the sensitization of luminescent lanthanide Tb(3+) and Eu(3+) cations by the electronic structure of zinc sulfide (ZnS) semiconductor nanoparticles. Excitation spectra collected while monitoring the lanthanide emission bands reveal that the ZnS nanoparticles act as an antenna for the sensitization of Tb(3+) and Eu(3+). The mechanism of lanthanide ion luminescence sensitization is rationalized in terms of an energy and charge transfer between trap sites and is based on a semiempirical model, proposed by Dorenbos and co-workers (Dorenbos, P. J. Phys.: Condens. Matter 2003, 15, 8417-8434; J. Lumin. 2004, 108, 301-305; J. Lumin. 2005, 111, 89-104. Dorenbos, P.; van der Kolk, E. Appl. Phys. Lett. 2006, 89, 061122-1-061122-3; Opt. Mater. 2008, 30, 1052-1057. Dorenbos, P. J. Alloys Compd. 2009, 488, 568-573; references 1-6.) to describe the energy level scheme. This model implies that the mechanisms of luminescence sensitization of Tb(3+) and Eu(3+) in ZnS nanoparticles are different; namely, Tb(3+) acts as a hole trap, whereas Eu(3+) acts as an electron trap. Further testing of this model is made by extending the studies from ZnS nanoparticles to other II-VI semiconductor materials; namely, CdSe, CdS, and ZnSe.