Tuning the Geometric Structure by Doping Silicon Clusters

Structures and electronic properties of VSin- (n = 14-20) clusters: a combined experimental and density functional theory study

We present a systematic study of the structures and electronic properties of vanadium-doped silicon cluster anions, VSi_n^- (n = 14-20), by combining photoelectron spectroscopy (PES) measurements and density functional theory (DFT) based theoretical calculations. High resolution PES of low temperature (10 K) clusters are acquired at a photon wavelength of 248 nm. Low-lying structures of VSi_14-20^- are obtained by a genetic algorithm based global minimum search code combined with DFT calculations. Excellent agreement is found between the measured PES and the simulated electron density of states of the putative ground-state structures. We conclude that clusters with sizes n = 14 and n = 15 prefer cage-like structures, with the encapsulated vanadium atom bonding with all silicon atoms, while a fullerene-like motif is more favorable for n ≥ 16. For the sizes n = 16 to 19, the structures consist of a V@Si₁₄ with two, three, four, and five Si atoms on the surface of the cage. For n = 20 the structure consists of a V@Si₁₅ with five Si atoms on the surface of the cage. VSi₁₄^- has the highest stability and stands out as a simultaneous closing of electronic and geometrical shells.

Finite temperature behavior of carbon atom-doped silicon clusters: depressed thermal stabilities, coexisting isomers, reversible dynamical pathways and fragmentation channels

BOMD simulations revealed a multifarious thermo-stimuli response (from “solid-state” to reversible dynamics to fragmentation) of experimentally identified SiC mixed clusters at finite temperature.

Altering CO binding on gold cluster cations by Pd-doping

The introduction of dopant atoms into metal nanoparticles is an effective way to control the interaction with adsorbate molecules and is important in many catalytic processes. In this work, experimental and theoretical evidence of the influence of Pd doping on the bonding between small cationic AuN+ clusters and CO is presented. The CO adsorption is studied by combining low-pressure collision cell reactivity and infrared multiple photon dissociation spectroscopy experiments with density functional theory calculations. Measured dissociation rates of cluster-CO complexes (N ≤ 21) allow the estimation of cluster-CO binding energies, showing that Pd doping increases the CO adsorption energy to an extent that is size-dependent. These trends are reproduced by theoretical calculations up to N = 13. In agreement with theory, measurements of the C-O vibrational frequency suggest that for the doped PdAuN-1+ (N = 3-5, 11) clusters, CO adsorbs on an Au atom, while for N = 6-10 and N = 12-14, CO interacts directly with the Pd dopant. A pronounced red-shifting of the C-O vibrational frequency is observed when CO interacts directly with the Pd dopant, indicating a significant back-donation of electron charge from Pd to CO. In contrast, the blue-shifted frequencies, observed when CO interacts with an Au atom, indicate that σ-donation dominates the Au-CO interaction. Studying such systems at the sub-nanometre scale enables a fundamental comprehension of the interactions between adsorbates, dopants and the host (Au) species at the atomic level.

Structural evolution and electronic properties of CoSin− (n = 3–12) clusters: mass-selected anion photoelectron spectroscopy and quantum chemistry calculations

Experimental measurements and theoretical calculations show that CoSi₁₀⁻ has the highest vertical detachment energy among all the CoSi_n⁻ (n = 3–12) clusters, implying CoSi₁₀⁻ has special stability.

Structural determination of niobium-doped silicon clusters by far-infrared spectroscopy and theory

The structures of niobium doped silicon cluster cations are determined by a combination of infrared multiple photon dissociation spectroscopy and density functional theory calculations.

Thermal radiation and fragmentation pathways of photo-excited silicon clusters

The fragmentation of laser heated silicon clusters was studied by time-of-flight mass spectrometry. For Si(n)(+) (n = 5-19, 21), the lowest energy fragmentation pathways were identified as the metastable decay channel occurring after the primary acceleration of the ions. The radiative cooling of laser excited Si(n)(+) (n = 5-9, 11, and 13) was quantified via its quenching effect on the amount of metastable fragmentation. The quenching varied strongly with cluster size, from no observable amount for Si7(+) to a cooling constant of 3 ⋅ 10(5) s(-1) for Si13(+). In addition, based on the observed fragmentation channels, the ionization energies and the relative binding energies of the clusters were partially ordered, and several ionization energies have been bracketed more precisely.

Geometry controls the stability of FeSi14

FeSi₁₄ is stable due to its compact and symmetric cage structure highlighting the importance of geometric effects in FeSi_n clusters.

Does the 18-Electron Rule Apply to CrSi12?

Understanding the bonding between silicon and transition metals is valuable for devising strategies for incorporating magnetic species into silicon. CrSi12 is the standard example of a cluster whose apparent high stability has been explained by the 18-electron rule. We critically examine the bonding and nature of stability of CrSi12 and show that its electronic structure does not conform to the 18-electron rule. Through theoretical studies, we find that CrSi12 has 16 effective valence electrons assigned to the Cr atom and an unoccupied 3dz(2) orbital. We demonstrate that the cluster's apparent stability is rooted in a crystal field-like splitting of the 3d orbitals analogous to that of square planar complexes. CrSi14 is shown to follow the 18-electron rule and exhibits all conventional markers characteristic of a magic cluster.

Probing the valence orbitals of transition metal-silicon diatomic anions: ZrSi, NbSi, MoSi, PdSi and WSi

Evolution of electronic properties and the nature of bonding of the 4d-transition metal silicides (ZrSi, NbSi, MoSi and PdSi) are discussed, revealing interesting trends in the transition metal-silicon interactions across the period. The electronic properties of select transition metal silicide diatomics have been determined by anion photoelectron imaging spectroscopy and theoretical methods. The electron binding energy spectra and photoelectron angular distributions obtained by 2.33 eV (532 nm) photons have revealed the distinct features of these diatomics. The theoretical calculations were performed at the density functional theory (DFT) level using the unrestricted B3LYP hybrid functional and at the ab initio unrestricted coupled cluster singles and doubles (triplets) (UCCSD(T)) methods to assign the ground electronic states of the neutral and anionic diatomics. The excited electronic states were calculated by the DFT (TD-DFT)/UB3LYP method. We have observed that the valence molecular orbital configuration of the ZrSi and NbSi anions are significantly different from that of the MoSi and PdSi anions. By combining our experimental and theoretical results, we report that the composition of the highest occupied molecular orbitals shift from a majority of transition metal s- and d-orbital contribution in ZrSi and NbSi, to mainly silicon p-orbital contribution for MoSi and PdSi. We expect these observed atomic scale transition metal-silicon interactions to be of increasing importance with the miniaturization of devices approaching the sub-nanometer size regime.

DENSITY FUNCTIONAL THEORY STUDIES OF CHARGED, COPPER-DOPED, SMALL SILICON CLUSTERS, ${\rm CuSi}_{n}^{+}/{\rm CuSi}_{n}^{-}$ (n = 1–7)

The structures and stabilities of charged, copper-doped, small silicon clusters [Formula: see text] (n = 1–7) have been systematically investigated using the density functional theory method at the B3LYP/6-311+G* level. For comparison, the geometries of neutral CuSi n clusters were also optimized at the same level, although most of them have been reported previously [see Xiao CY, Abraham A, Quinn R, Hagelberg F, Comparative study on the interaction of scandium and copper atoms with small silicon clusters, J Phys Chem A106:11380, 2002; Liu X, Zhao GF, Guo LJ, Wang XW, Zhang J, Jing Q, Luo YH, First-principle studies of the geometries and electronic properties of Cu m Si n (2 ≤ m + n ≤ 7) clusters, Chin Phys16:3359, 2007]. Our results for the ground state structures of neutral CuSi n clusters agree well with those of Liu et al. and Xiao et al. except for CuSi3 and CuSi7 . Removing or adding an electron greatly changes some ground state structures, i.e. for [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text]; others are almost unchanged, e.g. [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text]. The ground states of ionic [Formula: see text] are all singlet, except for the smaller CuSi- and [Formula: see text]. Based on the optimized geometries, various energetic properties, including binding energies, second-order difference energies, the highest occupied molecular orbit and the lowest unoccupied molecular orbital (HOMO–LUMO) energy gaps, ionization potential and electron affinities, were calculated for the most stable isomers of [Formula: see text]. All the results indicate that anionic [Formula: see text] and cationic [Formula: see text] clusters are relatively stable. The higher stability of the latter has been confirmed by Beck's observations.

Structural identification of caged vanadium doped silicon clusters

The geometry of cationic silicon clusters doped with vanadium, Si(n)V(+) (n=12-16), is investigated by using infrared multiple photon dissociation of the corresponding rare gas complexes in combination with ab initio calculations. It is shown that the clusters are endohedral cages, and evidence is provided that Si(16)V(+) is a fluxional system with a symmetric Frank-Kasper geometry.

Transition from exo- to endo- Cu absorption in CuSi(n) clusters: A Genetic Algorithms Density Functional Theory (DFT) Study

The characterization and prediction of the structures of metal silicon clusters is important for nanotechnology research because these clusters can be used as building blocks for nano devices, integrated circuits and solar cells. Several authors have postulated that there is a transition between exo to endo absorption of Cu in Si(n) clusters and showed that for n larger than 9 it is possible to find endohedral clusters. Unfortunately, no global searchers have confirmed this observation, which is based on local optimizations of plausible structures. Here we use parallel Genetic Algorithms (GA), as implemented in our MGAC software, directly coupled with DFT energy calculations to show that the global search of CuSi(n) cluster structures does not find endohedral clusters for n < 8 but finds them for n ≥ 10.

Mass spectrometry and beam deflection studies of tin-lead nanoalloy clusters

Photo-ionization mass spectrometry and electric beam deflection experiments were used to study isolated Sn(M)Pb(N) clusters (7 <or=N + M<or= 13 for tin-rich clusters, 7 <or=N + M<or= 15 for lead-rich clusters) in a molecular beam apparatus. The observed mass spectra reveal a broad abundance distribution of the bimetallic clusters in which all possible cluster compositions can be identified within the investigated size ranges. Comparison of the relative cluster intensities between pure tin or lead clusters (Sn(N+M) and Pb(N+M)) and mixed Sn(M)Pb(N) clusters indicate quite similar relative abundance distributions which can be smoothly shifted from one to the other extreme by changing the composition. The mass spectroscopic findings could be explained by assuming a substitution "alloy" formation in the Sn(M)Pb(N) cluster system. In combination, the dielectric properties were determined by passing the bimetallic clusters through an inhomogeneous electric field. The observed polarizabilities are significantly increased for most of the bimetallic clusters. This can be explained in an adiabatic polarization model by the presence of permanent electric dipole moments. These observations demonstrate how the electronic properties are not only crucially influenced by the cluster size but also by the composition of this nanoalloy model system. In addition to the enhanced polarizability, most of the measured beam profiles for tin-rich clusters show detectable beam broadenings due to the permanent dipole moments, in contrast to lead-rich clusters which possess considerable smaller dipole moments. Molecular dynamic simulations of the measured beam profile for Sn(6)Pb(1) taking theoretically calculated isomeric structures and dipole moments into account yields no completely satisfying outcome. Therefore we discuss possible reasons for the discrepancy between experimental and theoretical results.

Temperature and anharmonic effects on the infrared absorption spectrum from a quantum statistical approach: application to naphthalene

A method is developed to calculate the finite-temperature infrared absorption spectrum of polyatomic molecules with energy levels described by a second-order Dunham expansion. The anharmonic couplings are fully incorporated in the calculation of the quantum density of states, achieved using a Wang-Landau Monte Carlo procedure, as well as in the determination of transition energies. Additional multicanonical simulations provide the microcanonical absorption intensity as a function of both the absorption wavelength and the internal energy of the molecule. The finite-temperature spectrum is finally obtained by Laplace transformation of this microcanonical histogram. The present scheme is applied to the infrared spectrum of naphthalene, for which we quantify the shifting, broadening, and third-order effects as a continuous function of temperature. The influence of anharmonicity and couplings is manifested on the nontrivial variations of these features with increasing temperature.