Multi‐Field Effect on the Electronic Properties of Silicon Nanowires

Influence of the adsorption of toxic agents on the optical and electronic properties of B12N12 fullerene in the presence and absence of an external electric field

The interaction energies and optoelectronic properties of sarin (SF) and chlorosarin (SC) on the B₁₂N₁₂ with and without the presence of an electric field have been studied using density functional theory (DFT) calculations.

Theoretical study of methane adsorption and C─H bond activation over Fe-embedded graphene: Effect of external electric field

The effect of an external electric field (EF) on the methane adsorption and its activation on iron-embedded graphene (Fe-GPs) are investigated by using the M06-L density functional method. The EF is applied in the perpendicular direction to the graphene in the range of -0.015 to +0.015 a.u. with the interval of 0.005 a.u. The effects of EF on the adsorption, transition state and product complexes of the methane activation reaction are revealed. The binding energies of methane on Fe site in Fe-GPs are increased from -12.9 to -15.3, -18.1 and -21.5 kcal/mol for the negative EF of -0.005, -0.010 and -0.015, respectively. By applying positive EF, the activation barriers for methane activation are reduced in range of 3-8 kcal/mol (around 12-31%) and the reaction energies are more exothermic. The positive EF kinetically favors the reaction compared to the system without EF. The adsorption and activation of methane on Fe-GPs can be easily tuned by adjusting the external electric field for various applications. © 2019 Wiley Periodicals, Inc.

Strain and electric field tunable electronic structure of buckled bismuthene

Based on first-principles density functional theory calculations, we systemically study the properties of two-dimensional buckled single-layer bismuth (b-bismuthene).

Finite size and length effects on bandgap of CdSe nanorods

E _g(D, L) function of CdSe nanorods versus L and D.

Tunable Band Gap and Conductivity Type of ZnSe/Si Core-Shell Nanowire Heterostructures

The electronic properties of zincblende ZnSe/Si core-shell nanowires (NWs) with a diameter of 1.1-2.8 nm are calculated by means of the first principle calculation. Band gaps of both ZnSe-core/Si-shell and Si-core/ZnSe-shell NWs are much smaller than those of pure ZnSe or Si NWs. Band alignment analysis reveals that the small band gaps of ZnSe/Si core-shell NWs are caused by the interface state. Fixing the ZnSe core size and enlarging the Si shell would turn the NWs from intrinsic to p-type, then to metallic. However, Fixing the Si core and enlarging the ZnSe shell would not change the band gap significantly. The partial charge distribution diagram shows that the conduction band maximum (CBM) is confined in Si, while the valence band maximum (VBM) is mainly distributed around the interface. Our findings also show that the band gap and conductivity type of ZnSe/Si core-shell NWs can be tuned by the concentration and diameter of the core-shell material, respectively.

External electric field induced hydrogen storage/release on calcium-decorated single-layer and bilayer silicene

The appropriate F can be used to effectively enhance the hydrogen storage–release on the Ca–silicene system.