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Qu Z, Zhao Y, Ma F, Mei L, Chen XK, Zhou H, Chu X, Yang Y, Jiang Q, Zhang X, You J. Enhanced charge carrier transport and defects mitigation of passivation layer for efficient perovskite solar cells. Nat Commun 2024; 15:8620. [PMID: 39366950 PMCID: PMC11452620 DOI: 10.1038/s41467-024-52925-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2024] [Accepted: 09/23/2024] [Indexed: 10/06/2024] Open
Abstract
Surface passivation has been developed as an effective strategy to reduce trap-state density and suppress non-radiation recombination process in perovskite solar cells. However, passivation agents usually own poor conductivity and hold negative impact on the charge carrier transport in device. Here, we report a binary and synergistical post-treatment method by blending 4-tert-butyl-benzylammonium iodide with phenylpropylammonium iodide and spin-coating on perovskite surface to form passivation layer. The binary and synergistical post-treated films show enhanced crystallinity and improved molecular packing as well as better energy band alignment, benefiting for the hole extraction and transfer. Moreover, the surface defects are further passivated compared with unary passivation. Based on the strategy, a record-certified quasi-steady power conversion efficiency of 26.0% perovskite solar cells is achieved. The devices could maintain 81% of initial efficiency after 450 h maximum power point tracking.
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Affiliation(s)
- Zihan Qu
- Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Yang Zhao
- Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
- School of Physics, Liaoning University, 110036, Shenyang, Liaoning, P. R. China
| | - Fei Ma
- Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Le Mei
- Department of Chemistry, City University of Hong Kong, 999077, Kowloon, Hong Kong, P. R. China
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 215123, Suzhou, Jiangsu, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 215123, Suzhou, Jiangsu, P. R. China
| | - Xian-Kai Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 215123, Suzhou, Jiangsu, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 215123, Suzhou, Jiangsu, P. R. China
| | - Haitao Zhou
- Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Xinbo Chu
- Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 201210, Shanghai, P. R. China
- School of Microelectronics, Fudan University, 200433, Shanghai, P. R. China
| | - Qi Jiang
- Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Xingwang Zhang
- Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Jingbi You
- Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P. R. China.
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Bati ASR, Yu L, Tawfik SA, Spencer MJS, Shaw PE, Batmunkh M, Shapter JG. Electrically Sorted Single-Walled Carbon Nanotubes-Based Electron Transporting Layers for Perovskite Solar Cells. iScience 2019; 14:100-112. [PMID: 30947087 PMCID: PMC6446177 DOI: 10.1016/j.isci.2019.03.015] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/01/2019] [Revised: 02/25/2019] [Accepted: 03/15/2019] [Indexed: 11/30/2022] Open
Abstract
Incorporation of as prepared single-walled carbon nanotubes (SWCNTs) into the electron transporting layer (ETL) is an effective strategy to enhance the photovoltaic performance of perovskite solar cells (PSCs). However, the fundamental role of the SWCNT electrical types in the PSCs is not well understood. Herein, we prepared semiconducting (s-) and metallic (m-) SWCNT families and integrated them into TiO2 photoelectrodes of the PSCs. Based on experimental and theoretical studies, we found that the electrical type of the nanotubes plays an important role in the devices. In particular, the mixture of s-SWCNTs and m-SWCNTs (2:1 w/w)-based PSCs exhibited a remarkable efficiency of up to 19.35%, which was significantly higher than that of the best control cell (17.04%). In this class of PSCs, semiconducting properties of s-SWCNTs play a critical role in extracting and transporting electrons, whereas m-SWCNTs provide high conductance throughout the electrode.
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Affiliation(s)
- Abdulaziz S R Bati
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, QLD 4072, Australia
| | - LePing Yu
- College of Science and Engineering, Flinders University, Adelaide, SA 5042, Australia
| | | | - Michelle J S Spencer
- School of Science, RMIT University, GPO Box 2476, Melbourne, VIC 3001, Australia
| | - Paul E Shaw
- School of Chemistry and Molecular Biosciences, The University of Queensland, Brisbane, QLD 4072, Australia
| | - Munkhbayar Batmunkh
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, QLD 4072, Australia; College of Science and Engineering, Flinders University, Adelaide, SA 5042, Australia
| | - Joseph G Shapter
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, QLD 4072, Australia; College of Science and Engineering, Flinders University, Adelaide, SA 5042, Australia.
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