Atomic Vacancies in Transition Metal Dichalcogenides: Properties, Fabrication, and Limits

Boosted CO2 Photoreduction Performance by CdSe Nanoplatelets via Se Vacancy Engineering

2D metal-chalcogenide nanoplatelets (NPLs) exhibit promising photocatalysis properties due to their ultrathin morphology, high surface-to-volume ratio, and enhanced in-plane electron transport mobility. However, NPLs, especially cadmium chalcogenides, encounter challenges in CO2 photoreduction due to insufficient solar energy utilization and fast recombination of photogenerated charge carriers. Defect engineering offers a potential solution but often encounters difficulties maintaining structural integrity, mechanical stability, and electrical conductivity. Herein, by taking two monolayers (2ML) CdSe NPLs as a model system, selenium (Se) vacancies confined in atomic layers can enhance charge separation and conductivity. A straightforward approach to create Se vacancies in various monolayers CdSe NPLs (2, 4, and 5ML) has been developed, enabling efficient CO2 photoreduction with a 4-fold increase in CO generation compared to their defect-free counterparts. Significantly, accounting for higher charge density and efficient carrier transport due to Se vacancies, defective 2ML CdSe NPLs (VSe-2ML CdSe) exhibit CO evolution performance up to 2557.5 µmol g-¹ h-¹ with no significant decay over 5 h, which is an order of magnitude higher than that of common semiconductor catalysts. This study establishes a practical way to design advanced 2D semiconductor photocatalysts to achieve efficient CO2 photoreduction via defect engineering.

Principles and Applications of Two-Dimensional Semiconductor Material Devices for Reconfigurable Electronics

With the advances in edge computing and artificial intelligence, the demands of multifunctional electronics with large area efficiency are increased. As the scaling down of the conventional transistor is restricted by physical limits, reconfigurable electronics are developed to promote the functional integration of integrated circuits. Reconfigurable electronics refer to electronics with switchable functionalities, including reconfigurable logic operation functionalities and reconfigurable responses to electrical or optical signals. Reconfigurable electronics integrate data-processing capabilities with reduced size. Two-dimensional (2D) semiconductor materials exhibit excellent modulation capabilities through electrical and optical signals, and structural designs of 2D material devices achieve versatile and switchable functionalities. 2D semiconductors have great potential to develop advanced reconfigurable electronics. Recent years witnessed the rapid development of 2D material devices for reconfigurable electronics. This work focuses on the working principles of 2D material devices used for reconfigurable electronics, discusses applications of 2D-material-based reconfigurable electronics in logic operation and artificial intelligence, and further provides a future outlook for the development of reconfigurable electronics based on 2D material devices.

Recent Advancements in 2D Material-Based Memristor Technology Toward Neuromorphic Computing

Two-dimensional (2D) layered materials have recently gained significant attention and have been extensively studied for their potential applications in neuromorphic computing, where they are used to mimic the functions of the human brain. Their unique properties, including atomic-level thickness, exceptional mechanical stability, and tunable optical and electrical characteristics, make them highly versatile for a wide range of applications. In this review, we offer a comprehensive analysis of 2D material-based memristors. Furthermore, we examine the ability of 2D material-based memristors to successfully mimic the human brain by referencing their neuromorphic applications.

Spatial Confinement Growth Enabling MoS2@Hollow Mesoporous Carbon Spheres Microspheres with Enhanced Microwave Absorption and Corrosion Resistance

The complex electromagnetic applications in harsh corrosive environments urgently require research into multifunctional microwave absorption (MA) materials. The core-shell structure is an effective strategy to prepare multifunctional MA materials by efficiently combining the advantages of each component. Nevertheless, it remains a tough challenge to elucidate the effect of the binding positions of each component in MA materials on the comprehensive electromagnetic performance. Herein, two types of core-shell structured composites based on hollow mesoporous carbon spheres (HMCS), HMCS@MoS2 and MoS2@HMCS, were prepared via synergistic etch growth and spatial confinement growth strategies, respectively. Compared with HMCS, HMCS@MoS2 severely destroys the connection of HMCS, therefore resulting in impedance mismatching. Comparatively, the growth of MoS2 within the HMCS reduces the disruption of the HMCS connection, enabling MoS2@HMCS with enhanced dielectric loss while optimizing the impedance matching, and therefore, it yields an optimal reflection loss of -46.91 dB at 2 mm and an effective bandwidth of 5.78 GHz at 2.4 mm mixed with polydimethylsiloxane (PDMS). In addition, the combinations of the spatial confinement effect of HMCS, corrosion resistance of MoS2, and chemical stability of PDMS resulted in minimal changes in the MA performance of MoS2@HMCS/PDMS after soaking in acidic and alkaline solutions for 14 days, proving an excellent corrosion resistance property. This inspiring work proposes an effective spatial confinement growth strategy to optimize the impedance matching and further tailor the multifunction for dielectric loss dominated MA materials.

Tuning Electronic and Functional Properties in Defected MoS2 Films by Surface Patterning of Sulphur Atomic Vacancies

Defects are inherent in transition metal dichalcogenides and significantly affect their chemical and physical properties. In this study, surface defect electrochemical nanopatterning is proposed as a promising method to tune in a controlled manner the electronic and functional properties of defective MoS₂ thin films. Using parallel electrochemical nanolithography, MoS₂ thin films are patterned, creating sulphur vacancy-rich active zones alternated with defect-free regions over a centimetre scale area, with sub-micrometre spatial resolution. The patterned films display tailored optical and electronic properties due to the formation of sulphur vacancy-rich areas. Moreover, the effectiveness of defect nanopatterning in tuning functional properties is demonstrated by studying the electrocatalytic activity for the hydrogen evolution reaction.

Large-Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging

Point defects play a crucial role in determining the properties of atomically thin semiconductors. This work demonstrates the controlled formation of different types of defects and their comprehensive optical characterization using hyperspectral line imaging (HSLI). Distinct optical responses are observed in monolayer semiconductors grown under different stoichiometries using metal-organic chemical vapor deposition. HSLI enables the simultaneous measurement of 400 spectra, allowing for statistical analysis of optical signatures at close to a centimeter scale. The study discovers that chalcogen-rich samples exhibit remarkable optical uniformity due to reduced precursor accumulation compared to the metal-rich case. The utilization of HSLI as a facile and reliable characterization tool pushes the boundaries of potential applications for atomically thin semiconductors in future devices.

Thermal Relaxation in Janus Transition Metal Dichalcogenide Bilayers

In this work, we employ molecular dynamics simulations with semi-empirical interatomic potentials to explore heat dissipation in Janus transition metal dichalcogenides (JTMDs). The middle atomic layer is composed of either molybdenum (Mo) or tungsten (W) atoms, and the top and bottom atomic layers consist of sulfur (S) and selenium (Se) atoms, respectively. Various nanomaterials have been investigated, including both pristine JTMDs and nanostructures incorporating inner triangular regions with a composition distinct from the outer bulk material. At the beginning of our simulations, a temperature gradient across the system is imposed by heating the central region to a high temperature while the surrounding area remains at room temperature. Once a steady state is reached, characterized by a constant energy flux, the temperature control in the central region is switched off. The heat attenuation is investigated by monitoring the characteristic relaxation time (τav) of the local temperature at the central region toward thermal equilibrium. We find that SMoSe JTMDs exhibit thermal attenuation similar to conventional TMDs (τav~10-15 ps). On the contrary, SWSe JTMDs feature relaxation times up to two times as high (τav~14-28 ps). Forming triangular lateral heterostructures in their surfaces leads to a significant slowdown in heat attenuation by up to about an order of magnitude (τav~100 ps).

Investigation of Grain Boundary Effects in Sm0.2Ce0.8O2-x Thin Film Memristors

Cerium-based materials (CeO2-x) are of significant interest in the development of vacancy-modulated resistive switching (RS) memory devices. However, the influence of grain boundaries on the performance of memristors is very limited. To fill this gap, this study explores the influence of grain boundaries in cerium-based thin film resistive random-access memory (RRAM) devices. Sm0.2Ce0.8O2-x (SDC20) thin films were deposited on (100)-oriented Nb-doped SrTiO3 (NSTO) and (110)-oriented NSTO substrates using pulsed laser deposition (PLD). Devices constructed with a Pt/SDC20/NSTO structure exhibited reversible and stable bipolar resistive switching (RS) behavior. The differences in conduction mechanisms between single-crystal and polycrystalline devices were confirmed, with single-crystal devices displaying a larger resistance window and higher stability. Combining the results of XPS and I-V curve fitting, it was confirmed that defects near the grain boundaries in the SDC-based memristors capture electrons, thereby affecting the overall performance of the RRAM devices.

Engineering the Electrical and Optical Properties of WS2 Monolayers via Defect Control

Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.

Inspection of the Defect State Using the Mobility Spectrum Analysis Method

Mobility spectrum analysis (MSA) is a method that enables the carrier density (and mobility) separation of the majority and minority carriers in multicarrier semiconductors, respectively. In this paper, we use the p-GaAs layer in order to demonstrate that the MSA can perform unique facilities for the defect analysis by using its resolvable features for the carriers. Using two proven methods, we reveal that the defect state can be anticipated at the characteristic temperature Tdeep, in which the ratio (RNn/Nh) that is associated with the density of the minority carrier Nn, to the density of the majority carrier Nh, exceeds 50%. (1) Using a p-GaAs Schottky diode in a reverse bias regime, the position of the deep level transient spectroscopy (DLTS) peak is shown directly as the defect signal. (2) Furthermore, by examining the current-voltage-temperature (I-V-T) characteristics in the forward bias regime, this peak position has been indirectly revealed as the generation-recombination center. The DLTS signals are dominant around the Tdeep, according to the window rate, and it has been shown that the peak variation range is consistent with the temperature range of the temperature-dependent generation-recombination peak. The Tdeep is also consistent with the temperature-dependent thermionic emission peak position. By having only RNn/Nh through the MSA, it is possible to intuitively determine the existence and the peak position of the DLTS signal, and the majority carrier's density enables a more accurate extraction of the deep trap density in the DLTS analysis.

A Review of Transition Metal Dichalcogenides-Based Biosensors

Transition metal dichalcogenides (TMDCs) are widely used in biosensing applications due to their excellent physical and chemical properties. Due to the properties of biomaterial targets, the biggest challenge that biosensors face now is how to improve the sensitivity and stability. A lot of materials had been used to enhance the target signal. Among them, TMDCs show excellent performance in enhancing biosensing signals because of their metallic and semi-conducting electrical capabilities, tunable band gap, large specific surface area and so on. Here, we review different functionalization methods and research progress of TMDCs-based biosensors. The modification methods of TMDCs for biosensor fabrication mainly include two strategies: non-covalent and covalent interaction. The article summarizes the advantages and disadvantages of different modification strategies and their effects on biosensing performance. The authors present the challenges and issues that TMDCs need to be addressed in biosensor applications. Finally, the review expresses the positive application prospects of TMDCs-based biosensors in the future.