Bottom-up Synthesis of Nanosheets at Various Interfaces

Graphene oxide-based materials as proton-conducting membranes for electrochemical applications

The rapid advancements of graphene oxide (GO)-based membranes necessitate the understanding of their properties and application potential. Generally, proton (H+)-conducting membranes, including GO-based ones, are crucial components in various energy-relevant devices, significantly determining the transport process, selectivity, and overall efficiency of these devices. Particularly, GO-based membranes exhibit great potential in electrochemical applications owing to their remarkable conductivity and ease of undergoing further modifications. This review is aimed at highlighting recent functionalization strategies for GO with diverse substrates. It is also aimed at emphasizing how these modifications can enhance the electrochemical performances of GO-based membranes. Notably, key aspects, such as the enhanced H+-transfer kinetics, improved conductivity, functionalities, and optimization, of these membranes for specific applications are discussed. Additionally, the existing challenges and future directions for the field of functionalized GO are addressed to achieve precise control of the functionalities of these membranes as well as advance next-generation electrochemical devices.

Exfoliable Transition Metal Chalcogenide Semiconductor NbSe2I2

As the field of exfoliated van der Waals electronics grows to include complex heterostructures, the variety of available in-plane symmetries and geometries becomes increasingly valuable. In this work, we present an efficient chemical vapor transport synthesis of NbSe2I2 with the triclinic space group P1̅. This material contains Nb-Nb dimers and an in-plane crystallographic angle γ = 61.3°. We show that NbSe2I2 can be exfoliated down to few-layer and monolayer structures and use Raman spectroscopy to test the preservation of the crystal structure of exfoliated thin films. The crystal structure was verified by single-crystal and powder X-ray diffraction methods. Density functional theory calculations show triclinic NbSe2I2 to be a semiconductor with a band gap of around 1 eV, with similar band structure features for bulk and monolayer crystals. The physical properties of NbSe2I2 have been characterized by transport, thermal, optical, and magnetic measurements, demonstrating triclinic NbSe2I2 to be a diamagnetic semiconductor that does not exhibit any phase transformation below room temperature.