Optical and structural properties of lead iodide thin films prepared by vacuum evaporation method

Chemical Vapor Deposited Mixed Metal Halide Perovskite Thin Films

In this article, we used a two-step chemical vapor deposition (CVD) method to synthesize methylammonium lead-tin triiodide perovskite films, MAPb_1−xSn_xI₃, with x varying from 0 to 1. We successfully controlled the concentration of Sn in the perovskite films and used Rutherford backscattering spectroscopy (RBS) to quantify the composition of the precursor films for conversion into perovskite films. According to the RBS results, increasing the SnCl₂ source amount in the reaction chamber translate into an increase in Sn concentration in the films. The crystal structure and the optical properties of perovskite films were examined by X-ray diffraction (XRD) and UV-Vis spectrometry. All the perovskite films depicted similar XRD patterns corresponding to a tetragonal structure with I4cm space group despite the precursor films having different crystal structures. The increasing concentration of Sn in the perovskite films linearly decreased the unit volume from about 988.4 ų for MAPbI₃ to about 983.3 ų for MAPb₀.₃₉Sn₀.₆₁I₃, which consequently influenced the optical properties of the films manifested by the decrease in energy bandgap (E_g) and an increase in the disorder in the band gap. The SEM micrographs depicted improvements in the grain size (0.3–1 µm) and surface coverage of the perovskite films compared with the precursor films.

Efficient Perovskite Solar Cells Fabricated Through CsCl-Enhanced PbI2 Precursor via Sequential Deposition

The fabrication of high-quality perovskite film highly relies on chemical composition and the synthesis method of perovskite. So far, sequentially deposited MA0.03 FA0.97 Pb(I0.97 Br0.03 )3 polycrystalline film is adopted to produce high-performance perovskite solar cells with record power conversion efficiency (PCE). Fewer grain boundaries and incorporation of inorganic cation (e.g., cesium) would further increase device performance via sequential deposition. Here, cesium chloride (CsCl) is introduced into lead iodide (PbI2 ) precursor solution that beneficially modulates the property of PbI2 film, leading to larger grains with cesium incorporation in the resulting perovskite film. The enlarged crystal grains originate from a slower nucleation process for CsCl-containing PbI2 film when reacting with formamidine iodide, confirmed by in situ confocal photoluminescence imaging. Photovoltaic devices based on CsCl-containing PbI2 film demonstrate a higher averaging efficiency of 21.3% than 20.3% of the devices without CsCl additives for reverse scan. More importantly, the device stability is improved by CsCl additives that retain over 90% of their initial PCE value after 4000 min tracking at maximum power point under 1-sun illumination. This work paves a way to further improve the photovoltaic performance of mixed-cation-halide perovskite solar cells via a sequential deposition method.

An efficient, flexible perovskite solar module exceeding 8% prepared with an ultrafast PbI2 deposition rate

Large-area, pinhole-free CH₃NH₃PbI₃ perovskite thin films were successfully fabricated on 5 cm × 5 cm flexible indium tin oxide coated polyethylene naphthalate (ITO-PEN) substrates through a sequential evaporation/spin-coating deposition method in this research. The influence of the rate-controlled evaporation of PbI₂ films on the quality of the perovskite layer and the final performance of the planar-structured perovskite solar cells were investigated. An ultrafast evaporation rate of 20 Å s⁻¹ was found to be most beneficial for the conversion of PbI₂ to CH₃NH₃PbI₃ perovskite. Based on this high-quality CH₃NH₃PbI₃ film, a resultant flexible perovskite solar sub-module (active area of 16 cm²) with a power conversion efficiency of more than 8% and a 1.2 cm² flexible perovskite solar cell with a power conversion efficiency of 12.7% were obtained.

Effect of annealing temperature on the optical spectra of CdS thin films deposited at low solution concentrations by Chemical Bath Deposition (CBD) Technique

Two different concentrations of CdCl(2) and (NH(2))(2)CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD) technique. CdCl(2) (0.000312 M and 0.000625 M) was employed as a source of Cd(2+) while (NH(2))(2)CS (0.00125 M and 0.000625 M) for S(2-) at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl(2) (0.000312 M). Optical energy band gap (E(g)), Urbach energy (E(u)) and absorption coefficient (α) have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97%) was obtained for the air-annealed films at higher temperature at CdCl(2) (0.000312 M).