Synthesis of tin disulfide single crystals for nano-layer exfoliation

Sonochemical synthesis of SnS and SnS2 quantum dots from aqueous solutions, and their photo- and sonocatalytic activity

Our study reports the ultrasound-assisted synthesis of SnS and SnS2 in the form of nanoparticles using aqueous solutions of respective tin chloride and thioacetamide varying sonication time. The presence of both compounds is confirmed by powder X-ray diffraction, energy-dispersive X-ray spectroscopy, as well as Raman and FT-IR spectroscopic techniques. The existence of nanoparticles is proven by powder X-ray diffraction investigation and by high resolution transmission electron microscopy observations. The size of nanocrystallites are in the range of 3-8 nm and 30 50 nm for SnS, and 1.5-10 nm for SnS2. X-ray photoelectron spectroscopy measurements, used to investigate the chemical state of tin and sulphur atoms on the surface of nanoparticles, reveal that they are typically covered with tin on the same oxidation degree as respective bulk compound. Values of optical bandgaps of synthesized nanoparticles, according to the Tauc method, were 2.31, 1.47 and 1.05 eV for SnS (60, 90 and 120 min long synthesis, respectively), and 2.81, 2.78 and 2.70 eV for SnS2 (60, 90 and 120 min long synthesis, respectively). Obtained nanoparticles were utilized as photo- and sonocatalysts in the process of degradation of model azo-dye molecules by UV-C light or ultrasound. Quantum dots of SnS2 obtained under sonication lasting 120 min were the best photocatalyst (66.9 % color removal), while quantum dots of SnS obtained under similar sonication time were the best sonocatalyst (85.2 % color removal).

Sonochemical preparation of SnS and SnS2 nano- and micropowders and their characterization

Sonochemical production of tin(II) and tin(IV) sulfides is investigated. Different conditions of syntheses are examined: used solvent (ethanol or ethylenediamine), source of tin (SnCl₂ or SnCl₄), the molar ratio of thioacetamide to the tin source, and time of sonication. The obtained powders are characterized by the X-ray diffraction method (PXRD), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDX), and the Tauc method. Raman and FT-IR measurements were performed for the obtained samples, which additionally confirmed the crystallinity and phase composition of the samples. The influence of experimental conditions on composition (is it SnS or SnS₂), morphology, and on the bandgap of obtained products is elucidated. It was found that longer sonication times favor more crystalline product. Each of bandgaps is direct and most of them show typical values - c.a. 1.3 eV for SnS and 2.4 eV for SnS₂. However, there are some exceptions. Synthesized powders show a variety of forms such as needles, flower-like, rods, random agglomerates (SnS₂) and balls (SnS). Using ethanol as a solvent led to powders of SnS₂ independently of which tin chloride is used. Sonochemistry in ethylenediamine is more diverse: this solvent protects Sn²⁺ cations from oxidation so mostly SnS is obtained, while SnCl₄ does not produce powder of SnS₂ but Sn(SO₄)₂ instead or, at a higher ratio of thioacetamide to SnCl₄, green clear mixture.

Raman scattering studies on very thin layers of gallium sulfide (GaS) as a function of sample thickness and temperature

Gallium sulfide is a semiconducting material with a layered structure and a characteristic low interlayer interaction. Because of weak van der Waals forces, GaS crystals are relatively easy to exfoliate to very thin layers. In this work nanometric-GaS layers were obtained by a micro-mechanical exfoliation process and were transferred to Si/SiO₂ substrate. The thickness of these layers was estimated from AFM measurements. Raman spectra were collected for different layer thicknesses ranging from one layer to bulk crystal. An analytical function fitted to experimental data is proposed to determine layer thickness from Raman measurements. For the first time, the Raman position and the FWHM of the main Raman peaks were measured on very thin GaS layers as a function of temperature in the range from 80 to 470 K. The first order temperature coefficients of the A _1g Raman peaks were determined. Phonon decay due to anharmonic processes at temperatures above 300 K in layers of thickness below 4 nm was observed. Contribution of optical phonon scattering processes to thermal properties of very thin GaS layers is discussed.

Exfoliation of crystals

The review is concerned with progress in methods for exfoliation of crystals, from mechanical exfoliation using sticky tape to modern techniques involving sonication-assisted exfoliation, shear exfoliation in liquids using intercalating agents and stabilizers, direct liquid exfoliation and cosolvent exfoliation. The potential of methods of osmotic swelling in water and in organic dispersion media with constant and variable chemical composition of nanosheets, chemical and electrochemical intercalation, exfoliation by hydrazine (including versions resulting in changes in the chemical composition of nanosheets), ionic liquids and supercritical fluids is discussed. Methods for size sorting of nanosheets by density-gradient and cascade centrifugation and the possibility of nanosheet size control are analyzed.

The bibliography includes 136 references.

Engineering the crystallinity of tin disulfide deposited at low temperatures

We report here that SnS₂ films deposited at 150 °C and annealed at below 350 °C have good potential for using 2D SnS₂ in flexible electronic devices.