Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes.
MATERIALS 2022;
15:ma15051843. [PMID:
35269074 PMCID:
PMC8911910 DOI:
10.3390/ma15051843]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/15/2022] [Accepted: 02/15/2022] [Indexed: 01/27/2023]
Abstract
Impurity concentrations of oxygen, carbon, nitrogen, iron, and other heavy metals should be well controlled in silicon crystals to maintain the crystal quality for application in electronic and solar cell devices. Contamination by impurities occurs during the melting of raw materials and during the crystal growth process. Quantitative analysis of impurity transfer using numerical and experimental analysis is important to control impurity concentrations. This paper reviews the analysis of the impurity transport phenomena in crystal growth furnaces of Czochralski and directional solidification methods by a model of global analysis and an experiment during the crystal growth of silicon.
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