1
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Krach G, Witthaut K, Steinadler J, Bräuniger T, Milman V, Bayarjargal L, Winkler B, Bykova E, Bykov M, Schnick W. Synthesis and Comprehensive Studies of Be-IV-N 2 (IV=Si, Ge): Solving the Mystery of Wurtzite-Type Pmc2 1 Structures. Angew Chem Int Ed Engl 2024:e202409593. [PMID: 38963036 DOI: 10.1002/anie.202409593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/21/2024] [Revised: 07/03/2024] [Accepted: 07/04/2024] [Indexed: 07/05/2024]
Abstract
The research for wurtzite-type ternary nitride semiconductors containing earth abundant elements with a stoichiometry of 1 : 1 : 2 was focused on metals like Mg or Zn, so far. The vast majority of these Grimm-Sommerfeld analogue compounds crystallize in the β-NaFeO2 structure, although a second arrangement in space group Pmc21 is predicted to be a viable alternative. Despite extensive theoretical and experimental studies, this structure has so far remained undiscovered. Herein, we report on BeGeN2 in a Pmc21 structure, synthesized from Be3N2 and Ge3N4 using a high-pressure high-temperature approach at 6 GPa and 800 °C. The compound was characterized by powder X-ray diffraction (PXRD), solid state nuclear magnetic resonance (NMR), Raman and energy dispersive X-ray (EDX) spectroscopy, temperature-dependent PXRD, second harmonic generation (SHG) and UV/Vis measurements and in addition also compared to its lighter homologue BeSiN2 in all mentioned analytic techniques. The synthesis and investigation of both the first beryllium germanium nitride and the first ternary wurtzite-type nitride crystallizing in space group Pmc21 open the door to a new field of research on wurtzite-type related structures.
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Affiliation(s)
- Georg Krach
- Department of Chemistry, University of Munich (LMU), Butenandtstraße 5-13, 81377, Munich, Germany
| | - Kristian Witthaut
- Department of Chemistry, University of Munich (LMU), Butenandtstraße 5-13, 81377, Munich, Germany
| | - Jennifer Steinadler
- Department of Chemistry, University of Munich (LMU), Butenandtstraße 5-13, 81377, Munich, Germany
| | - Thomas Bräuniger
- Department of Chemistry, University of Munich (LMU), Butenandtstraße 5-13, 81377, Munich, Germany
| | - Victor Milman
- Dassault Systèmes BIOVIA, CB4 0WN, Cambridge, United Kingdom
| | - Lkhamsuren Bayarjargal
- Institute of Geosciences, Goethe-University Frankfurt, Altenhoeferallee 1, 60438, Frankfurt am Main, Germany
| | - Björn Winkler
- Institute of Geosciences, Goethe-University Frankfurt, Altenhoeferallee 1, 60438, Frankfurt am Main, Germany
| | - Elena Bykova
- Institute of Geosciences, Goethe-University Frankfurt, Altenhoeferallee 1, 60438, Frankfurt am Main, Germany
| | - Maxim Bykov
- Institute of Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Straße 7, 60438, Frankfurt am Main, Germany
| | - Wolfgang Schnick
- Department of Chemistry, University of Munich (LMU), Butenandtstraße 5-13, 81377, Munich, Germany
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2
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Rom CL, O'Donnell S, Huang K, Klein RA, Kramer MJ, Smaha RW, Zakutayev A. Low-temperature synthesis of cation-ordered bulk Zn 3WN 4 semiconductor via heterovalent solid-state metathesis. Chem Sci 2024; 15:9709-9718. [PMID: 38939135 PMCID: PMC11206237 DOI: 10.1039/d4sc00322e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Accepted: 04/30/2024] [Indexed: 06/29/2024] Open
Abstract
Metathesis reactions are widely used in synthetic chemistry. While state-of-the-art organic metathesis involves highly controlled processes where specific bonds are broken and formed, inorganic metathesis reactions are often extremely exothermic and, consequently, poorly controlled. Ternary nitrides offer a technologically relevant platform for expanding synthetic control of inorganic metathesis reactions. Here, we show that energy-controlled metathesis reactions involving a heterovalent exchange are possible in inorganic nitrides. We synthesized Zn3WN4 by swapping Zn2+ and Li+ between Li6WN4 and ZnX2 (X = Br, Cl, F) precursors. The in situ synchrotron powder X-ray diffraction and differential scanning calorimetry show that the reaction onset is correlated with the ZnX2 melting point and that product purity is inversely correlated with the reaction's exothermicity. Therefore, careful choice of the halide counterion (i.e., ZnBr2) allows the synthesis to proceed in a swift but controlled manner at a surprisingly low temperature for an inorganic nitride (300 °C). High resolution synchrotron powder X-ray diffraction and diffuse reflectance spectroscopy confirm the synthesis of a cation-ordered Zn3WN4 semiconducting material. We hypothesize that this synthesis strategy is generalizable because many Li-M-N phases are known (where M is a metal) and could therefore serve as precursors for metathesis reactions targeting new ternary nitrides. This work expands the synthetic control of inorganic metathesis reactions in a way that will accelerate the discovery of novel functional ternary nitrides and other currently inaccessible materials.
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Affiliation(s)
- Christopher L Rom
- Materials, Chemical, and Computational Science, National Renewable Energy Laboratory Golden CO 80401 USA
| | - Shaun O'Donnell
- Materials, Chemical, and Computational Science, National Renewable Energy Laboratory Golden CO 80401 USA
- Department of Chemistry, Colorado State University Fort Collins CO 80523 USA
| | - Kayla Huang
- Materials, Chemical, and Computational Science, National Renewable Energy Laboratory Golden CO 80401 USA
- University of Illinois Urbana-Champaign Champaign IL 61801 USA
| | - Ryan A Klein
- Materials, Chemical, and Computational Science, National Renewable Energy Laboratory Golden CO 80401 USA
- Center for Neutron Research, National Institute of Standards and Technology Gaithersburg MD 20899 USA
| | - Morgan J Kramer
- Center for Neutron Research, National Institute of Standards and Technology Gaithersburg MD 20899 USA
- Department of Chemistry, Southern Methodist University Dallas TX 75275 USA
| | - Rebecca W Smaha
- Materials, Chemical, and Computational Science, National Renewable Energy Laboratory Golden CO 80401 USA
| | - Andriy Zakutayev
- Materials, Chemical, and Computational Science, National Renewable Energy Laboratory Golden CO 80401 USA
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3
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Wostatek T, Chirala VYMR, Stoddard N, Civas EN, Pimputkar S, Schimmel S. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3104. [PMID: 38998188 PMCID: PMC11242142 DOI: 10.3390/ma17133104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Revised: 06/07/2024] [Accepted: 06/10/2024] [Indexed: 07/14/2024]
Abstract
The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects are covered, from fundamental autoclave technology, to reactivity and solubility of elements, to synthesized crystalline nitride materials and their properties. Initially, the potential of emerging and novel nitrides is discussed, motivating their synthesis in single crystal form. This is followed by a summary of our current understanding of the reactivity/solubility of species and the state-of-the-art single crystal synthesis for GaN, AlN, AlGaN, BN, InN, and, more generally, ternary and higher order nitrides. Investigation of the synthesized materials is presented, with a focus on point defects (impurities, native defects including hydrogenated vacancies) based on GaN and potential pathways for their mitigation or circumvention for achieving a wide range of controllable functional and structural material properties. Lastly, recent developments in autoclave technology are reviewed, based on GaN, with a focus on advances in development of in situ technologies, including in situ temperature measurements, optical absorption via UV/Vis spectroscopy, imaging of the solution and crystals via optical (visible, X-ray), along with use of X-ray computed tomography and diffraction. While time intensive to develop, these technologies are now capable of offering unprecedented insight into the autoclave and, hence, facilitating the rapid exploration of novel nitride synthesis using the ammonothermal method.
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Affiliation(s)
- Thomas Wostatek
- Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair of Electron Devices (LEB), Cauerstraße 6, 91058 Erlangen, Germany
| | - V. Y. M. Rajesh Chirala
- Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair of Electron Devices (LEB), Cauerstraße 6, 91058 Erlangen, Germany
| | - Nathan Stoddard
- Department of Materials Science and Engineering, Lehigh University, 5 E Packer Avenue, Bethlehem, PA 18015, USA
| | - Ege N. Civas
- Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair of Electron Devices (LEB), Cauerstraße 6, 91058 Erlangen, Germany
| | - Siddha Pimputkar
- Department of Materials Science and Engineering, Lehigh University, 5 E Packer Avenue, Bethlehem, PA 18015, USA
| | - Saskia Schimmel
- Friedrich-Alexander-Universität Erlangen-Nürnberg, Chair of Electron Devices (LEB), Cauerstraße 6, 91058 Erlangen, Germany
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4
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Shang K, Feng J, Zhang B, Liu J, Ming X, Kuang X. Tolerance Factor and Phase Stability of the KCoO 2-Type AMN 2 Nitrides. Inorg Chem 2024; 63:4168-4175. [PMID: 38373068 DOI: 10.1021/acs.inorgchem.3c04067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
In order to help understand the structural stability of KCoO2-type ternary nitrides AMN2, referring to perovskite structure, a tolerance factor t is proposed to describe the size effect on the phase/symmetry options of the experimentally accessible AMN2 nitrides. This leads to a range of t values above 0.946 for structurally stable KCoO2-type AMN2 nitrides with t values around 0.970 for the orthorhombic and tetragonal phase boundary. In contrast, most of AMN2 nitrides exhibit α-NaFeO2-type structure with t ∼ 0.898-0.946 and cations ordered or disordered rocksalt structure while t below 0.898. Employing the proposed criterion, the structure formation for other ternary AMN2 compositions with lanthanum and alkaline earth cations for the A sites were predicted, which was testified through the synthesis attempts and complemented by formation energy evaluations. The efforts to synthesize the ternary Lanthanide and alkaline earth-based AMN2 nitrides were unsuccessful, which could associate the structural instability with the large formation energies of lanthanide nitrides LaMN2 and the greater tolerance factor of 1.048 for BaTiN2. The experimentally already synthesized AMN2 nitrides could be categorized into three types with different tolerance factors, and scarce AMN2 nitrides with lower formation energies would be accessible using different synthetic routes beyond the traditional solid-state synthesis method.
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Affiliation(s)
- Kejing Shang
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
| | - Jie Feng
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
| | - Bowen Zhang
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
| | - Junwei Liu
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
| | - Xing Ming
- College of Physics and Electronic Information Engineering, Key Laboratory of Low-Dimensional Structural Physics and Application, Education Department of Guangxi Zhuang Autonomous Region, Guilin University of Technology, Guilin 541004, P. R. China
| | - Xiaojun Kuang
- MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China
- Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin 541006, P. R. China
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5
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Ye F, Hong RT, Qiu YB, Xie YZ, Zhang DP, Fan P, Cai XM. Nanocrystalline ZnSnN 2 Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:178. [PMID: 36616088 PMCID: PMC9823707 DOI: 10.3390/nano13010178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Revised: 12/15/2022] [Accepted: 12/26/2022] [Indexed: 06/17/2023]
Abstract
ZnSnN2 has potential applications in photocatalysis and photovoltaics. However, the difficulty in preparing nondegenerate ZnSnN2 hinders its device application. Here, the preparation of low-electron-density nanocrystalline ZnSnN2 and its device application are demonstrated. Nanocrystalline ZnSnN2 was prepared with reactive sputtering. Nanocrystalline ZnSnN2 with an electron density of approximately 1017 cm-3 can be obtained after annealing at 300 °C. Nanocrystalline ZnSnN2 is found to form Schottky contact with Ag. Both the current I vs. voltage V curves and the capacitance C vs. voltage V curves of these samples follow the related theories of crystalline semiconductors due to the limited long-range order provided by the crystallites with sizes of 2-10 nm. The I-V curves together with the nonlinear C-2-V curves imply that there are interface states at the Ag-nanocrystalline ZnSnN2 interface. The application of nanocrystalline ZnSnN2 to heterojunction solar cells is also demonstrated.
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Affiliation(s)
- Fan Ye
- Correspondence: (F.Y.); (X.-M.C.)
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6
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Zakutayev A. Synthesis of Zn 2NbN 3ternary nitride semiconductor with wurtzite-derived crystal structure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:354003. [PMID: 33887709 DOI: 10.1088/1361-648x/abfab3] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Accepted: 04/22/2021] [Indexed: 06/12/2023]
Abstract
Binary III-N nitride semiconductors with wurtzite crystal structure such as GaN and AlN have been long used in many practical applications ranging from optoelectronics to telecommunication. The structurally related ZnGeN2or ZnSnN2derived from the parent binary compounds by cation mutation (elemental substitution) have recently attracted attention, but such ternary nitride materials are mostly limited to II-IV-N2compositions. This paper demonstrates synthesis and characterization of zinc niobium nitride (Zn2NbN3)-a previously unreported II2-V-N3ternary nitride semiconductor. The Zn2NbN3thin films are synthesized using a one-step adsorption-controlled growth that locks in the targeted stoichiometry, and a two-step deposition/annealing method that suppresses the loss of Zn and N. Measurements indicate that this sputtered Zn2NbN3crystalizes in cation-disordered wurtzite-derived structure, in contrast to chemically related rocksalt-derived Mg2NbN3compound, also synthesized here for comparison using the two-step method. The estimated wurtzite lattice parameter ratio of Zn2NbN3is 1.55, and the optical absorption onset is at 2.1 eV. Both of these values are lower compared to published Zn2NbN3computational values ofc/a= 1.62 andEg= 3.5-3.6 eV. Additional theoretical calculations indicate that this difference is due to cation disorder in experimental samples, suggesting a way to tune the structural parameters and the resulting properties of heterovalent ternary nitride materials. Overall, this work expands the wurtzite family of nitride semiconductors to include Zn2NbN3, and suggests that related II2-V-N3and other ternary nitrides should be possible to synthesize.
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Affiliation(s)
- Andriy Zakutayev
- National Renewable Energy Laboratory, Golden CO 80401 United States of America
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7
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Quayle PC, Breternitz J. A discussion on `Domain formation and phase transitions in the wurtzite-based heterovalent ternaries: a Landau theory analysis'. ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES 2021; 77:217-221. [PMID: 33944800 PMCID: PMC8127391 DOI: 10.1107/s2053273321001376] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2020] [Accepted: 02/06/2021] [Indexed: 11/24/2022]
Abstract
A scientific exchange on an earlier paper [Quayle (2020). Acta Cryst. A76, 410–420] has led to the clarification of some of the points. Heterovalent ternary nitrides are considered one of the promising classes of materials for photovoltaics, combining attractive physical properties with low toxicity and element abundance. One of the front-runner systems under consideration is ZnSnN2. Although it is nominally a ternary compound, no clear crystallographic evidence for cation ordering has been observed so far. An attempt to elucidate this discrepancy [Quayle (2020). Acta Cryst. A76, 410–420] was the trigger for an intensive discussion between the authors, and an agreement was reached to elaborate on some points in order to set things in perspective. Rather than using a conventional comment–answer scheme, this is published in the form of a joint discussion to celebrate constructive criticism and collegiality.
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Affiliation(s)
- Paul C Quayle
- Department of Electrical and Computer Engineering, Michigan State University, 428 South Shaw Lane, East Lansing, Michigan 48824-1226, USA
| | - Joachim Breternitz
- Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
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8
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Kawamura F, Murata H, Imura M, Yamada N, Taniguchi T. Synthesis of CaSnN 2 via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N 2 (II = Ca, Mg, Zn) Semiconductors. Inorg Chem 2021; 60:1773-1779. [PMID: 33480682 DOI: 10.1021/acs.inorgchem.0c03242] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
A novel ternary nitride semiconductor, CaSnN2, with a layered rock-salt-type structure (R3̅m) was synthesized via a high-pressure metathesis reaction. The properties and structures of II-Sn-N2 (II = Ca, Mg, Zn) semiconductors were also systematically studied, and the differences among them were revealed by comparison. These semiconductor materials showed a rock-salt- or wurtzite-type structure depending on the combined effect of the synthetic conditions and the characteristics of the group II elements. Additionally, the rock-salt-type structures of CaSnN2 and MgSnN2 (i.e., the ambient-pressure phase) were different from those predicted using first-principles calculations. Further, on the basis of first-principles calculations and consideration of the pressure effect, the recovered CaSnN2 sample showed an R3̅m structure. CaSnN2 and MgSnN2 showed a band gap of 2.3-2.4 eV, which is suitable for overcoming the green-light-gap problem. These semiconductors also showed a strong cathode luminescence peak at room temperature, and generalized gradient approximation (GGA) calculations revealed that CaSnN2 has a direct band gap. These inexpensive and nontoxic semiconductors (II-Sn-N2 semiconductors (II = Ca, Mg, Zn)), with mid band gaps are required as pigments to replace cadmium-based materials. They can also be used in emitting devices and as photovoltaic absorbers, replacing InxGa1-xN semiconductors.
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Affiliation(s)
- Fumio Kawamura
- National Institute for Materials Science, High pressure group, Namiki 1-1, Tskuba, Ibaraki 305-0044, Japan
| | - Hidenobu Murata
- Department of Materials Science, Osaka Prefecture University, 1-1 Gakuencho, Naka-ku, Sakai, Osaka 599-8531, Japan
| | - Masataka Imura
- National Institute for Materials Science, Next generation semiconductor group, Namiki 1-1, Tskuba, Ibaraki 305-0044, Japan
| | - Naoomi Yamada
- Department of Applied Chemistry, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, International Center for Materials Nanoarchitectonics, Namiki 1-1, Tskuba, Ibaraki 305-0044, Japan
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9
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Greenaway AL, Loutris AL, Heinselman KN, Melamed CL, Schnepf RR, Tellekamp MB, Woods-Robinson R, Sherbondy R, Bardgett D, Bauers S, Zakutayev A, Christensen ST, Lany S, Tamboli AC. Combinatorial Synthesis of Magnesium Tin Nitride Semiconductors. J Am Chem Soc 2020; 142:8421-8430. [PMID: 32279492 PMCID: PMC10905991 DOI: 10.1021/jacs.0c02092] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
Nitride materials feature strong chemical bonding character that leads to unique crystal structures, but many ternary nitride chemical spaces remain experimentally unexplored. The search for previously undiscovered ternary nitrides is also an opportunity to explore unique materials properties, such as transitions between cation-ordered and -disordered structures, as well as to identify candidate materials for optoelectronic applications. Here, we present a comprehensive experimental study of MgSnN2, an emerging II-IV-N2 compound, for the first time mapping phase composition and crystal structure, and examining its optoelectronic properties computationally and experimentally. We demonstrate combinatorial cosputtering of cation-disordered, wurtzite-type MgSnN2 across a range of cation compositions and temperatures, as well as the unexpected formation of a secondary, rocksalt-type phase of MgSnN2 at Mg-rich compositions and low temperatures. A computational structure search shows that the rocksalt-type phase is substantially metastable (>70 meV/atom) compared to the wurtzite-type ground state. Spectroscopic ellipsometry reveals optical absorption onsets around 2 eV, consistent with band gap tuning via cation disorder. Finally, we demonstrate epitaxial growth of a mixed wurtzite-rocksalt MgSnN2 on GaN, highlighting an opportunity for polymorphic control via epitaxy. Collectively, these findings lay the groundwork for further exploration of MgSnN2 as a model ternary nitride, with controlled polymorphism, and for device applications, enabled by control of optoelectronic properties via cation ordering.
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Affiliation(s)
- Ann L. Greenaway
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Amanda L. Loutris
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Karen N. Heinselman
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Celeste L. Melamed
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
- Department
of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Rekha R. Schnepf
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
- Department
of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
| | - M. Brooks Tellekamp
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Rachel Woods-Robinson
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
- Applied
Science and Technology Graduate Group, University
of California at Berkeley, Berkeley, California 94720, United States
- Energy
Technologies Area, Lawrence Berkeley National
Laboratory, Berkeley, California 94702, United States
| | - Rachel Sherbondy
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
- Department
of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Dylan Bardgett
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Sage Bauers
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Andriy Zakutayev
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Steven T. Christensen
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Stephan Lany
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Adele C. Tamboli
- Materials
and Chemistry Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
- Department
of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
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10
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Zeman OEO, von Rohr FO, Neudert L, Schnick W. Facile One‐step Synthesis of Zn
1–
x
Mn
x
SiN
2
Nitride Semiconductor Solid Solutions via Solid‐state Metathesis Reaction. Z Anorg Allg Chem 2020. [DOI: 10.1002/zaac.201900315] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Otto E. O. Zeman
- Department of Chemistry University of Munich (LMU) Butenandtstraße 5–13 81377 Munich Germany
| | - Fabian O. von Rohr
- Department of Chemistry University of Zurich Winterthurerstraße 190 8057 Zurich Switzerland
| | - Lukas Neudert
- Department of Chemistry University of Munich (LMU) Butenandtstraße 5–13 81377 Munich Germany
| | - Wolfgang Schnick
- Department of Chemistry University of Munich (LMU) Butenandtstraße 5–13 81377 Munich Germany
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11
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Gogova D, Olsen VS, Bazioti C, Lee IH, Prytz Ø, Vines L, Kuznetsov AY. High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates. CrystEngComm 2020. [DOI: 10.1039/d0ce00861c] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Making a systematic effort, we have developed single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering.
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Affiliation(s)
- D. Gogova
- Department of Physics
- Center for Materials Science and Nanotechnology
- University of Oslo
- NO-0316 Oslo
- Norway
| | - V. S. Olsen
- Department of Physics
- Center for Materials Science and Nanotechnology
- University of Oslo
- NO-0316 Oslo
- Norway
| | - C. Bazioti
- Department of Physics
- Center for Materials Science and Nanotechnology
- University of Oslo
- NO-0316 Oslo
- Norway
| | - I.-H. Lee
- Department of Physics
- Center for Materials Science and Nanotechnology
- University of Oslo
- NO-0316 Oslo
- Norway
| | - Ø. Prytz
- Department of Physics
- Center for Materials Science and Nanotechnology
- University of Oslo
- NO-0316 Oslo
- Norway
| | - L. Vines
- Department of Physics
- Center for Materials Science and Nanotechnology
- University of Oslo
- NO-0316 Oslo
- Norway
| | - A. Yu. Kuznetsov
- Department of Physics
- Center for Materials Science and Nanotechnology
- University of Oslo
- NO-0316 Oslo
- Norway
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12
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Kawamura F, Imura M, Murata H, Yamada N, Taniguchi T. Synthesis of a Novel Rocksalt‐Type Ternary Nitride Semiconductor MgSnN
2
Using the Metathesis Reaction under High Pressure. Eur J Inorg Chem 2019. [DOI: 10.1002/ejic.201901059] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Fumio Kawamura
- High pressure group National Institute for Materials Science Namiki 1‐1, Tskuba 305‐0044 Ibaraki Japan
| | - Masataka Imura
- Widegap semiconductor group National Institute for Materials Science Namiki 1‐1, Tskuba 305‐0044 Ibaraki Japan
| | - Hidenobu Murata
- Department of Materials Science Osaka Prefecture University 1‐1 Gakuencho, Naka‐ku 599‐8531 Sakai Osaka Japan
| | - Naoomi Yamada
- Department of Applied Chemistry Chubu University 1200 Matsumoto 487‐8501 Kasugai Aichi Japan
| | - Takashi Taniguchi
- High pressure group National Institute for Materials Science Namiki 1‐1, Tskuba 305‐0044 Ibaraki Japan
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13
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Makin RA, York K, Durbin SM, Senabulya N, Mathis J, Clarke R, Feldberg N, Miska P, Jones CM, Deng Z, Williams L, Kioupakis E, Reeves RJ. Alloy-Free Band Gap Tuning across the Visible Spectrum. PHYSICAL REVIEW LETTERS 2019; 122:256403. [PMID: 31347908 DOI: 10.1103/physrevlett.122.256403] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2018] [Revised: 12/16/2018] [Indexed: 06/10/2023]
Abstract
We present evidence, from theory and experiment, that ZnSnN_{2} and MgSnN_{2} can be used to match the band gap of InGaN without alloying-by exploiting cation disorder in a controlled fashion. We base this on the determination of S, the long-range order parameter of the cation sublattice, for a series of epitaxial thin films of ZnSnN_{2} and MgSnN_{2} using three different techniques: x-ray diffraction, Raman spectroscopy, and in situ electron diffraction. We observe a linear relationship between S^{2} and the optical band gap of both ZnSnN_{2} (1.12-1.98 eV) and MgSnN_{2} (1.87-3.43 eV). The results clearly demonstrate the correlation between controlled heterovalent cation ordering and the optical band gap, which applies to a broad group of emerging ternary heterovalent compounds and has implications for similar trends in other material properties besides the band gap.
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Affiliation(s)
- Robert A Makin
- Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, Michigan 49008, USA
| | - Krystal York
- Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, Michigan 49008, USA
| | - Steven M Durbin
- Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, Michigan 49008, USA
| | - Nancy Senabulya
- Applied Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - James Mathis
- Applied Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Roy Clarke
- Applied Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
| | | | - Patrice Miska
- Université de Lorraine, CNRS, IJL, F-54000 Nancy, France
| | - Christina M Jones
- Applied Physics, University of Michigan, Ann Arbor, Michigan 48109, USA and Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Zihao Deng
- Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Logan Williams
- Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Emmanouil Kioupakis
- Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Roger J Reeves
- School of Physical and Chemical Sciences, University of Canterbury, Christchurch 8140, New Zealand
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14
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Kloß SD, Schnick W. Nitridophosphate – eine Erfolgsgeschichte der Nitridsynthese. Angew Chem Int Ed Engl 2019. [DOI: 10.1002/ange.201812791] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Simon D. Kloß
- Department Chemie Ludwig-Maximilians-Universität München (LMU) Butenandtstraße 5–13 81377 München Deutschland
| | - Wolfgang Schnick
- Department Chemie Ludwig-Maximilians-Universität München (LMU) Butenandtstraße 5–13 81377 München Deutschland
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15
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Kloß SD, Schnick W. Nitridophosphates: A Success Story of Nitride Synthesis. Angew Chem Int Ed Engl 2019; 58:7933-7944. [PMID: 30485618 DOI: 10.1002/anie.201812791] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2018] [Indexed: 11/09/2022]
Abstract
Nitridophosphates and phosphorus nitrides are thoroughly investigated classes of nitrides. During thirty years of research, the methods for their synthesis evolved from the condensation of molecular precursors at moderate temperatures and ambient pressures to state-of-the-art high-pressure and high-temperature processes. Landmark breakthroughs made in recent years led to a comprehension-based proficiency in nitridophosphate synthesis that is illustrated by the large compositional and structural diversity of the nitridophosphates known today. Herein, we review the advances made in synthesis with regard to the prevalent problem of nitride synthesis: the susceptibility of nitride ions to oxidation.
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Affiliation(s)
- Simon D Kloß
- Department of Chemistry, University of Munich (LMU), Butenandtstraße 5-13, 81377, Munich, Germany
| | - Wolfgang Schnick
- Department of Chemistry, University of Munich (LMU), Butenandtstraße 5-13, 81377, Munich, Germany
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16
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Pan J, Cordell J, Tucker GJ, Tamboli AC, Zakutayev A, Lany S. Interplay between Composition, Electronic Structure, Disorder, and Doping due to Dual Sublattice Mixing in Nonequilibrium Synthesis of ZnSnN 2 :O. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807406. [PMID: 30672031 DOI: 10.1002/adma.201807406] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2018] [Revised: 12/19/2018] [Indexed: 06/09/2023]
Abstract
The opportunity for enhanced functional properties in semiconductor solid solutions has attracted vast scientific interest for a variety of novel applications. However, the functional versatility originating from the additional degrees of freedom due to atomic composition and ordering comes along with new challenges in characterization and modeling. Developing predictive synthesis-structure-property relationships is prerequisite for effective materials design strategies. Here, a first-principles based model for property prediction in such complex semiconductor materials is presented. This framework incorporates nonequilibrium synthesis, dopants and defects, and the change of the electronic structure with composition and short range order. This approach is applied to ZnSnN2 (ZTN) which has attracted recent interest for photovoltaics. The unintentional oxygen incorporation and its correlation with the cation stoichiometry leads to the formation of a solid solution with dual sublattice mixing. A nonmonotonic doping behavior as a function of the composition is uncovered. The degenerate doping of near-stoichiometric ZTN, which is detrimental for potential applications, can be lowered into the 1017 cm-3 range in highly off-stoichiometric material, in quantitative agreement with experiments.
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Affiliation(s)
- Jie Pan
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Jacob Cordell
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
- Department of Mechanical Engineering, Colorado School of Mines, Golden, CO, 80401, USA
| | - Garritt J Tucker
- Department of Mechanical Engineering, Colorado School of Mines, Golden, CO, 80401, USA
| | - Adele C Tamboli
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Andriy Zakutayev
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Stephan Lany
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
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17
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Mallmann M, Maak C, Niklaus R, Schnick W. Ammonothermal Synthesis, Optical Properties, and DFT Calculations of Mg2
PN3
and Zn2
PN3. Chemistry 2018; 24:13963-13970. [DOI: 10.1002/chem.201803293] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2018] [Indexed: 11/07/2022]
Affiliation(s)
- Mathias Mallmann
- Department of Chemistry; University of Munich (LMU); Butenandstr. 5-13 (D) 81377 Munich Germany
| | - Christian Maak
- Department of Chemistry; University of Munich (LMU); Butenandstr. 5-13 (D) 81377 Munich Germany
| | - Robin Niklaus
- Department of Chemistry; University of Munich (LMU); Butenandstr. 5-13 (D) 81377 Munich Germany
| | - Wolfgang Schnick
- Department of Chemistry; University of Munich (LMU); Butenandstr. 5-13 (D) 81377 Munich Germany
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18
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Häusler J, Schnick W. Ammonothermal Synthesis of Nitrides: Recent Developments and Future Perspectives. Chemistry 2018; 24:11864-11879. [PMID: 29476648 DOI: 10.1002/chem.201800115] [Citation(s) in RCA: 40] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2018] [Indexed: 11/05/2022]
Abstract
Nitrides represent an intriguing class of functional materials with a broad range of application fields. Within the past decade, the ammonothermal method became increasingly attractive for the synthesis and crystal growth of nitride materials. The ammonothermal approach proved to be eminently suitable for the growth of bulk III-nitride semiconductors like GaN, and furthermore provided access to numerous ternary and multinary nitrides and oxonitrides with promising optical and electronic properties. In this minireview, we will shed light on the latest research findings covering the synthesis of nitrides by this method. An overview of synthesis strategies for binary, ternary, and multinary nitrides and oxonitrides, as well as their properties and potential applications will be given. The recent development of autoclave technologies for syntheses at high temperatures and pressures, in situ methods for investigations of crystallization processes, and solubility measurements by ultrasonic velocity experiments is briefly reviewed as well. In conclusion, challenges and future perspectives regarding the synthesis and crystal growth of novel nitrides, as well as the advancement of autoclave techniques are discussed.
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Affiliation(s)
- Jonas Häusler
- Department of Chemistry, University of Munich (LMU), Butenandtstr. 5-13 (D), 81377, Munich, Germany
| | - Wolfgang Schnick
- Department of Chemistry, University of Munich (LMU), Butenandtstr. 5-13 (D), 81377, Munich, Germany
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19
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Bai Y, Luo G, Meng L, Zhang Q, Xu N, Zhang H, Wu X, Kong F, Wang B. Single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides as promising photocatalysts. Phys Chem Chem Phys 2018; 20:14619-14626. [DOI: 10.1039/c8cp01463a] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The catalytic activity of single-layer ZnGeN2 is better and the band edge positions can be effectively tuned to match better with the redox potentials of water by biaxial strain.
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Affiliation(s)
- Yujie Bai
- Physics Department
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
| | - Gaixia Luo
- Physics Department
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
| | - Lijuan Meng
- Physics Department
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
| | - Qinfang Zhang
- School of Materials Science and Engineering
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
| | - Ning Xu
- Physics Department
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
| | - Haiyang Zhang
- Physics Department
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
| | - Xiuqiang Wu
- Physics Department
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
| | - Fanjie Kong
- Physics Department
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
| | - Baolin Wang
- School of Materials Science and Engineering
- Yancheng Institute of Technology
- Yancheng 224051
- P. R. China
- School of Physical Science and Technology
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20
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Cao X, Kawamura F, Ninomiya Y, Taniguchi T, Yamada N. Conduction-band effective mass and bandgap of ZnSnN 2 earth-abundant solar absorber. Sci Rep 2017; 7:14987. [PMID: 29118322 PMCID: PMC5678229 DOI: 10.1038/s41598-017-14850-7] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2017] [Accepted: 10/17/2017] [Indexed: 11/10/2022] Open
Abstract
Pseudo III-V nitride ZnSnN2 is an earth-abundant semiconductor with a high optical absorption coefficient in the solar spectrum. Its bandgap can be tuned by controlling the cation sublattice disorder. Thus, it is a potential candidate for photovoltaic absorber materials. However, its important basic properties such as the intrinsic bandgap and effective mass have not yet been quantitatively determined. This paper presents a detailed optical absorption analysis of disordered ZnSnN2 degenerately doped with oxygen (ZnSnN2-x O x ) in the ultraviolet to infrared region to determine the conduction-band effective mass (m c*) and intrinsic bandgap (E g). ZnSnN2-x O x epilayers are n-type degenerate semiconductors, which exhibit clear free-electron absorption in the infrared region. By analysing the free-electron absorption using the Drude model, m c* was determined to be (0.37 ± 0.05)m 0 (m 0 denotes the free electron mass). The fundamental absorption edge in the visible to ultraviolet region shows a blue shift with increasing electron density. The analysis of the blue shift in the framework of the Burstein-Moss effect gives the E g value of 0.94 ± 0.02 eV. We believe that the findings of this study will provide important information to establish this material as a photovoltaic absorber.
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Affiliation(s)
- Xiang Cao
- Department of Applied Chemistry, Chubu University, Kasugai, 487-8501, Japan.
| | - Fumio Kawamura
- National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan
| | - Yoshihiko Ninomiya
- Department of Applied Chemistry, Chubu University, Kasugai, 487-8501, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan
| | - Naoomi Yamada
- Department of Applied Chemistry, Chubu University, Kasugai, 487-8501, Japan.
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