The Effect of Dopant-Free Hole-Transport Polymers on Charge Generation and Recombination in Cesium-Bismuth-Iodide Solar Cells

0D/2D Mixed Dimensional Lead-Free Caesium Bismuth Iodide Perovskite for Solar Cell Application

Bismuth-based perovskites are potentially a promising alternative for lead-free perovskites. During bond formation, however, trivalent ions on Cs3Bi2I9 with CsI/BiI3 ratio of 1.5/1 form 0D-neutral charged compounds with higher bandgap (>2.0 eV) and poor absorption capacity. Mixed 0/2-dimensional structures are potentially suitable substitutes due to their low bandgap. So far, the reported CsI/BiI3 ratios for 0D/2D structures are 1:1, 1:2 and 1:3. Herein, a new ratio of 1/1.5 is reported. Caesium bismuth iodide at a ratio of CsI/BiI3 of 1/1.5 was synthesised using a one-step processing method with/without solvent vapour annealing. During solvent annealing, a 1/4 (v/v) mixture of DMF/methanol was used as a solvent. The crystal structure formed at a ratio of 1/1.5 is more similar to 1.5/1 than to 1/3. The XRD pattern revealed additional characteristics peaks at 009, 012, 209 and 300, indicating the growth of another phase. The formed heterogeneous mixed 0D/2D structure has an extended light absorption capacity greater than 720 nm. Solvent vapour annealing improved film morphology by enhancing grain size and packing density. When cells with and without solvent vapour annealing are compared, the power conversion efficiency of caesium bismuth iodide increases from 0.26% without solvent annealing to 0.98% with solvent vapour annealing. This study establishes a new route for future research on crystal configuration, nomenclature, film and morphology, quality tailoring and applications toward the goal of lead-free perovskite solar cells.

Enhancing the efficiency and stability of perovskite solar cells based on moisture-resistant dopant free hole transport materials by using a 2D-BA2PbI4 interfacial layer

In this work, the photovoltaic performance and stability of perovskite solar cells (PSCs) based on a dopant-free hole transport layer (HTL) are efficiently improved by inserting a two-dimensional (2D) interfacial layer. The benzyl ammonium lead iodide (BA₂PbI₄) 2D perovskite is used as an interfacial layer between the 3D CH₃NH₃PbI₃ perovskite and two moisture-resistant dopant-free HTLs including poly[[2,3-bis(3-octyloxyphenyl)-5,8-quinoxalinediyl]-2,5-thiophenediyl] (TQ1) and poly(3-hexylthiophene) (P3HT). TQ1 with a facile synthesis procedure has a higher moisture resistivity compared to P3HT which can improve the stability of PSCs. The 2D BA₂PbI₄ perovskite with a less-volatile bulkier organic cation efficiently passivates the defects at the perovskite/HTL interface, leading to 11.95% and 15.04% efficiency for the modified TQ1 and P3HT based cells, respectively. For a better understanding, the structural, optical, and electrical properties of PSCs comprising P3HT and TQ1 HTLs with and without interface modification are studied. The interface modified PSCs show slower open-circuit voltage decay and longer carrier lifetimes compared to unmodified cells. In addition, impedance spectroscopy reveals lower charge transport resistance and higher recombination resistance for the modified devices, which could be associated with the modification of the interface between the 3D CH₃NH₃PbI₃ perovskite and HTL caused by the 2D interfacial layer. Also after aging under ambient conditions for about 800 hours, the modified PCSs retain more than 80% of their initial PCEs. These results give us the hope of achieving simpler, cheaper, and more stable PSCs with dopant-free HTLs through 2D interfacial layers, which have great potential for commercialization.

Metal Halide Semiconductors beyond Lead-Based Perovskites for Promising Optoelectronic Applications

In recent decades, metal halide semiconductors represented by lead-based halide perovskites have shown broad potential in optoelectronic applications. This family of semiconductors differs from traditional tetrahedral semiconductors in crystalline structure, chemical bonding, electronic-structure features, optoelectronic properties, as well as material fabrication method. At present, difficulties arising from both intrinsic material properties (including Pb toxicity and long-term stability) and technological aspects hinder their large-scale commercialization. In this Perspective, we focus on up-and-coming lead-free metal halide semiconductors toward high-performance optoelectronic applications. We start by outlining the advantages of metal halide semiconductors and their physical and chemical underpinnings. We then review composition and structure, electronic structure, optoelectronic properties, and device applications according to classification into three material categories, i.e., three-dimensional halide perovskites, low-dimensional perovskites and perovskite-like materials, and materials beyond perovskites. We conclude with an outlook on the challenges and opportunities of metal halide semiconductors and the future development of the field.

Polymeric Dopant-Free Hole Transporting Materials for Perovskite Solar Cells: Structures and Concepts towards Better Performances

Perovskite solar cells are a hot topic of photovoltaic research, reaching, in few years, an impressive efficiency (25.5%), but their long-term stability still needs to be addressed for industrial production. One of the most sizeable reasons for instability is the doping of the Hole Transporting Material (HTM), being the salt commonly employed as a vector bringing moisture in contact with perovskite film and destroying it. With this respect, the research focused on new and stable "dopant-free" HTMs, which are inherently conductive, being able to effectively work without any addition of dopants. Notwithstanding, they show impressive efficiency and stability results. The dopant-free polymers, often made of alternated donor and acceptor cores, have properties, namely the filming ability, the molecular weight tunability, the stacking and packing peculiarities, and high hole mobility in absence of any dopant, that make them very attractive and a real innovation in the field. In this review, we tried our best to collect all the dopant-free polymeric HTMs known so far in the perovskite solar cells field, providing a brief historical introduction, followed by the classification and analysis of the polymeric structures, based on their building blocks, trying to find structure-activity relationships whenever possible. The research is still increasing and a very simple polymer (PFDT-2F-COOH) approaches PCE = 22% while some more complex ones overcome 22%, up to 22.41% (PPY2).

Alkali Metal Ion-Regulated Lead-free, All-Inorganic Double Perovskites for HTM-free, Carbon-Based Solar Cells

Quaternary Cs₂AgBiBr₆ perovskites have been considered as a potential candidate to simultaneously resolve the lead toxicity and instability issues of unprecedented organic-inorganic hybrid halide perovskites. Unfortunately, the photovoltaic efficiency is still lower owing to the great challenge to make high-quality Cs₂AgBiBr₆ film with fewer defects. Herein, we demonstrate alkali metal ions including Li⁺, Na⁺, K⁺, and Rb⁺ as mediators to regulate the crystal lattice and film quality of Cs₂AgBiBr₆ perovskites. A less-pinhole perovskite film is obtained by precisely controlling the doping dosage and element species, significantly reducing the defects. When assembled into a hole-transporting material-free, carbon-electrode perovskite solar cell, a significantly enhanced efficiency of 2.57% compared to the undoped device with 1.77% efficiency has been achieved owing to the suppressed shunt current loss. Additionally, this device displays superior tolerance under high-temperature and air conditions without encapsulation, providing new opportunities to promote the future development of lead-free Cs₂AgBiBr₆ perovskites in the photoelectric field.

Superior Stability and Efficiency Over 20% Perovskite Solar Cells Achieved by a Novel Molecularly Engineered Rutin-AgNPs/Thiophene Copolymer

Perovskite solar cells (PSCs) with efficiencies greater than 20% have been realized mostly with expensive spiro-MeOTAD hole-transporting material. PSCs are demonstrated that achieve stabilized efficiencies exceeding 20% with straightforward low-cost molecularly engineered copolymer poly(1-(4-hexylphenyl)-2,5-di(thiophen-2-yl)-1H-pyrrole) (PHPT-py) based on Rutin-silver nanoparticles (AgNPs) as the hole extraction layer. The Rutin-AgNPs additive enables the creation of compact, highly conformal PHPT-py layers that facilitate rapid carrier extraction and collection. The spiro-MeOTAD-based PSCs show comparable efficiency, although their operational stability is poor. This instability originated from potential-induced degradation of the spiro-MeOTAD/Au contact. The addition of conductive Rutin-AgNPs into PHPT-py layer allows PSCs to retain >97% of their initial efficiency up to 60 d without encapsulation under relative humidity. The PHPT-py/ Rutin-AgNPs-based devices surpass the stability of spiro-MeOTAD-based PSCs and potentially reduce the fabrication cost of PSCs.