1
|
Zeng B, Lu L, Ming C, Zhao S, Dai R, Zhou Z, Zhang J, Ding D, Xin G, Sun YY. van der Waals Stacking-Determined Polymorphs of Quasi-One-Dimensional BiSCl Grown by Chemical Vapor Deposition. J Phys Chem Lett 2024:7939-7944. [PMID: 39074357 DOI: 10.1021/acs.jpclett.4c01923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/31/2024]
Abstract
We report chemical vapor deposition (CVD) synthesis of two quasi-one-dimensional (quasi-1D) polymorphs of BiSCl, denoted by y-BiSCl and r-BiSCl. The length of the CVD samples can reach about 0.4 mm. Such quasi-1D samples of the two polymorphs can be readily separated into individual pieces for either characterization or application. The two polymorphs can be clearly differentiated by Raman spectroscopy. First-principles calculations and group analysis are used to assign each Raman peak to the corresponding vibrational mode. Ultraviolet-visible measurements on solution grown thin-film samples reveal that the two polymorphs exhibit significantly different band gaps of 2.08 eV (y-BiSCl) and 1.81 eV (r-BiSCl). First-principles calculation further shows that the interatomic chain binding energy is 18.1 meV/Å2, confirming that the van der Waals stacking determines the difference in their band gaps. Our findings highlight the possibility of realizing the desired functionalities in quasi-1D materials by controlling stacking orientation.
Collapse
Affiliation(s)
- Biao Zeng
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lingyan Lu
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Chen Ming
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shuwen Zhao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ruiwen Dai
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Zhengyang Zhou
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jiawei Zhang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Dongzhou Ding
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guoqing Xin
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Yi-Yang Sun
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| |
Collapse
|
2
|
Li S, Huang Z, Ding Y, Zhang C, Yu J, Feng Q, Feng J. Growth of BiSBr Microsheet Arrays for Enhanced Photovoltaics Performance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306964. [PMID: 38072815 DOI: 10.1002/smll.202306964] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Revised: 10/23/2023] [Indexed: 04/19/2024]
Abstract
In this study, single-crystalline BiSBr is synthesized using a solution-based approach and conducted a systematic characterization of its photoelectric properties and photovoltaic performances. UV photoelectron spectroscopy and density functional theory (DFT) calculations reveal that BiSBr is an indirect p-type semiconductor, characterized by distinct positions and compositions of the valence band maximum and conduction band minimum. The BiSBr single crystal microrod features a significant electrical conductivity of 14 800 S m-1 along the c-axis, denoting minimal carrier resistance in this direction. For photovoltaic performance assessment, the authors successfully fabricated two homogeneous BiSBr films on TiO2 porous substrates: A microsheet array film via physical vapor deposition (PVD) and solvothermal treatment, and a BiSBr microsheet film via PVD and thermal treatment. The solar cell, comprising a BiSBr microsheet array film with an architecture of fluorine-doped tin oxide FTO/TiO2/BiSBr/(I3 -/I-)/Pt, demonstrated a power conversation efficiency of 1.40%, ≈11 times that of BiSBr microsheet film counterpart. These preliminary results underscore the potential of BiSBr microsheet arrays, producible through low-cost solution processes, as adept light absorbers, enhancing photovoltaic efficiency through effective light scattering and promoting efficient electron-hole separation and transport.
Collapse
Affiliation(s)
- Sen Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Zhiyuan Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Yafei Ding
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Chao Zhang
- School of Materials Science and Engineering, Anhui University of Science and Technology, Huainan, Anhui, 232001, China
| | - Jingyan Yu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Qi Feng
- Department of Advanced Materials Science, Faculty of Engineering and Design, Kagawa University, 2217-20 Hayashi-cho, Takamatsu, 761-0396, Japan
| | - Jun Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| |
Collapse
|
3
|
Choi YC, Nie R. Heavy pnictogen chalcohalides for efficient, stable, and environmentally friendly solar cell applications. NANOTECHNOLOGY 2023; 34:142001. [PMID: 36603211 DOI: 10.1088/1361-6528/acb05d] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Accepted: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Solar cell technology is an effective solution for addressing climate change and the energy crisis. Therefore, many researchers have investigated various solar cell absorbers that convert Sunlight into electric energy. Among the different materials researched, heavy pnictogen chalcohalides comprising heavy pnictogen cations, such as Bi3+and Sb3+, and chalcogen-halogen anions have recently been revisited as emerging solar absorbers because of their potential for efficient, stable, and low-toxicity solar cell applications. This review explores the recent progress in the applications of heavy pnictogen chalcohalides, including oxyhalides and mixed chalcohalides, in solar cells. We categorize them into material types based on their common structural characteristics and describe their up-to-date developments in solar cell applications. Finally, we discuss their material imitations, challenges for further development, and possible strategies for overcoming them.
Collapse
Affiliation(s)
- Yong Chan Choi
- Division of Energy Technology, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu 42988, Republic of Korea
| | - Riming Nie
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| |
Collapse
|
4
|
Quarta D, Toso S, Giannuzzi R, Caliandro R, Moliterni A, Saleh G, Capodilupo A, Debellis D, Prato M, Nobile C, Maiorano V, Infante I, Gigli G, Giannini C, Manna L, Giansante C. Colloidal Bismuth Chalcohalide Nanocrystals. Angew Chem Int Ed Engl 2022; 61:e202201747. [PMID: 35226780 PMCID: PMC9311208 DOI: 10.1002/anie.202201747] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Indexed: 11/11/2022]
Abstract
Here we present a colloidal approach to synthesize bismuth chalcohalide nanocrystals (BiEX NCs, in which E=S, Se and X=Cl, Br, I). Our method yields orthorhombic elongated BiEX NCs, with BiSCl crystallizing in a previously unknown polymorph. The BiEX NCs display a composition-dependent band gap spanning the visible spectral range and absorption coefficients exceeding 105 cm-1 . The BiEX NCs show chemical stability at standard laboratory conditions and form colloidal inks in different solvents. These features enable the solution processing of the NCs into robust solid films yielding stable photoelectrochemical current densities under solar-simulated irradiation. Overall, our versatile synthetic protocol may prove valuable in accessing colloidal metal chalcohalide nanomaterials at large and contributes to establish metal chalcohalides as a promising complement to metal chalcogenides and halides for applied nanotechnology.
Collapse
Affiliation(s)
- Danila Quarta
- Consiglio Nazionale delle RicercheIstituto di Nanotecnologia, CNR NANOTECVia Monteroni73100LecceItaly
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi', Università del SalentoVia per Arnesano73100LecceItaly
| | - Stefano Toso
- Istituto Italiano di Tecnologia, IITVia Morego 3016163GenovaItaly
- International Doctoral Program in ScienceUniversità Cattolica del Sacro Cuore25121BresciaItaly
| | - Roberto Giannuzzi
- Consiglio Nazionale delle RicercheIstituto di Nanotecnologia, CNR NANOTECVia Monteroni73100LecceItaly
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi', Università del SalentoVia per Arnesano73100LecceItaly
| | - Rocco Caliandro
- Consiglio Nazionale delle RicercheIstituto di Cristallografia, CNR ICVia Amendola 122/O70126BariItaly
| | - Anna Moliterni
- Consiglio Nazionale delle RicercheIstituto di Cristallografia, CNR ICVia Amendola 122/O70126BariItaly
| | - Gabriele Saleh
- ITMO UniversitySCAMT Institute9 Lomonosova str.191002Saint PetersburgRussian Federation
| | - Agostina‐Lina Capodilupo
- Consiglio Nazionale delle RicercheIstituto di Nanotecnologia, CNR NANOTECVia Monteroni73100LecceItaly
| | - Doriana Debellis
- Istituto Italiano di Tecnologia, IITVia Morego 3016163GenovaItaly
| | - Mirko Prato
- Istituto Italiano di Tecnologia, IITVia Morego 3016163GenovaItaly
| | - Concetta Nobile
- Consiglio Nazionale delle RicercheIstituto di Nanotecnologia, CNR NANOTECVia Monteroni73100LecceItaly
| | - Vincenzo Maiorano
- Consiglio Nazionale delle RicercheIstituto di Nanotecnologia, CNR NANOTECVia Monteroni73100LecceItaly
| | - Ivan Infante
- Istituto Italiano di Tecnologia, IITVia Morego 3016163GenovaItaly
| | - Giuseppe Gigli
- Consiglio Nazionale delle RicercheIstituto di Nanotecnologia, CNR NANOTECVia Monteroni73100LecceItaly
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi', Università del SalentoVia per Arnesano73100LecceItaly
| | - Cinzia Giannini
- Consiglio Nazionale delle RicercheIstituto di Cristallografia, CNR ICVia Amendola 122/O70126BariItaly
| | - Liberato Manna
- Istituto Italiano di Tecnologia, IITVia Morego 3016163GenovaItaly
| | - Carlo Giansante
- Consiglio Nazionale delle RicercheIstituto di Nanotecnologia, CNR NANOTECVia Monteroni73100LecceItaly
| |
Collapse
|
5
|
Quarta D, Toso S, Giannuzzi R, Caliandro R, Moliterni A, Saleh G, Capodilupo A, Debellis D, Prato M, Nobile C, Maiorano V, Infante I, Gigli G, Giannini C, Manna L, Giansante C. Colloidal Bismuth Chalcohalide Nanocrystals. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202201747] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Danila Quarta
- Consiglio Nazionale delle Ricerche Istituto di Nanotecnologia, CNR NANOTEC Via Monteroni 73100 Lecce Italy
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi', Università del Salento Via per Arnesano 73100 Lecce Italy
| | - Stefano Toso
- Istituto Italiano di Tecnologia, IIT Via Morego 30 16163 Genova Italy
- International Doctoral Program in Science Università Cattolica del Sacro Cuore 25121 Brescia Italy
| | - Roberto Giannuzzi
- Consiglio Nazionale delle Ricerche Istituto di Nanotecnologia, CNR NANOTEC Via Monteroni 73100 Lecce Italy
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi', Università del Salento Via per Arnesano 73100 Lecce Italy
| | - Rocco Caliandro
- Consiglio Nazionale delle Ricerche Istituto di Cristallografia, CNR IC Via Amendola 122/O 70126 Bari Italy
| | - Anna Moliterni
- Consiglio Nazionale delle Ricerche Istituto di Cristallografia, CNR IC Via Amendola 122/O 70126 Bari Italy
| | - Gabriele Saleh
- ITMO University SCAMT Institute 9 Lomonosova str. 191002 Saint Petersburg Russian Federation
| | - Agostina‐Lina Capodilupo
- Consiglio Nazionale delle Ricerche Istituto di Nanotecnologia, CNR NANOTEC Via Monteroni 73100 Lecce Italy
| | - Doriana Debellis
- Istituto Italiano di Tecnologia, IIT Via Morego 30 16163 Genova Italy
| | - Mirko Prato
- Istituto Italiano di Tecnologia, IIT Via Morego 30 16163 Genova Italy
| | - Concetta Nobile
- Consiglio Nazionale delle Ricerche Istituto di Nanotecnologia, CNR NANOTEC Via Monteroni 73100 Lecce Italy
| | - Vincenzo Maiorano
- Consiglio Nazionale delle Ricerche Istituto di Nanotecnologia, CNR NANOTEC Via Monteroni 73100 Lecce Italy
| | - Ivan Infante
- Istituto Italiano di Tecnologia, IIT Via Morego 30 16163 Genova Italy
| | - Giuseppe Gigli
- Consiglio Nazionale delle Ricerche Istituto di Nanotecnologia, CNR NANOTEC Via Monteroni 73100 Lecce Italy
- Dipartimento di Matematica e Fisica ‘Ennio De Giorgi', Università del Salento Via per Arnesano 73100 Lecce Italy
| | - Cinzia Giannini
- Consiglio Nazionale delle Ricerche Istituto di Cristallografia, CNR IC Via Amendola 122/O 70126 Bari Italy
| | - Liberato Manna
- Istituto Italiano di Tecnologia, IIT Via Morego 30 16163 Genova Italy
| | - Carlo Giansante
- Consiglio Nazionale delle Ricerche Istituto di Nanotecnologia, CNR NANOTEC Via Monteroni 73100 Lecce Italy
| |
Collapse
|