Substrate-Independent Palladium Atomic Layer Deposition

Adsorption and Reaction Mechanisms of Direct Palladium Synthesis by ALD Using Pd(hfac)2 and Ozone on Si (100) Surface

Palladium nanoparticles made by atomic layer deposition (ALD) normally involve formaldehyde or H2 as a reducing agent. Since formaldehyde is toxic and H2 is explosive, it is advantageous to remove this reducing step during the fabrication of palladium metal by ALD. In this work we have successfully used Pd(hfac)2 and ozone directly to prepare palladium nanoparticles, without the use of reducing or annealing agents. Density functional theory (DFT) was employed to explore the reaction mechanisms of palladium metal formation in this process. DFT results show that Pd(hfac)2 dissociatively chemisorbed to form Pd(hfac)* and hfac* on the Si (100) surface. Subsequently, an O atom of the ozone could cleave the C–C bond of Pd(hfac)* to form Pd* with a low activation barrier of 0.46 eV. An O atom of the ozone could also be inserted into the hfac* to form Pd(hfac-O)* with a lower activation barrier of 0.29 eV. With more ozone, the C–C bond of Pd(hfac-O)* could be broken to produce Pd* with an activation barrier of 0.42 eV. The ozone could also chemisorb on the Pd atom of Pd(hfac-O)* to form O3-Pd(hfac-O)*, which could separate into O-Pd(hfac-O)* with a high activation barrier of 0.83 eV. Besides, the activation barrier was 0.64 eV for Pd* that was directly oxidized to PdOx by ozone. Based on activation barriers from DFT calculations, it was possible to prepare palladium without reducing steps when ALD conditions were carefully controlled, especially the ozone parameters, as shown by our experimental results. The mechanisms of this approach could be used to prepare other noble metals by ALD without reducing/annealing agents.

The co-reactant role during plasma enhanced atomic layer deposition of palladium

Atomic layer deposition (ALD) of noble metals is an attractive technology potentially applied in nanoelectronics and catalysis. Unlike the combustion-like mechanism shown by other noble metal ALD processes, the main palladium (Pd) ALD process using palladium(ii)hexafluoroacetylacetonate [Pd(hfac)2] as precursor is based on true reducing surface chemistry. In this work, a thorough investigation of plasma-enhanced Pd ALD is carried out by employing this precursor with different plasmas (H2*, NH3*, O2*) and plasma sequences (H2* + O2*, O2* + H2*) as co-reactants at varying temperatures, providing insights in the co-reactant and temperature dependence of the Pd growth per cycle (GPC). At all temperatures, films grown with only reducing co-reactants contain a large amount of carbon, while an additional O2* in the co-reactant sequence helps to obtain Pd films with much lower impurity concentrations. Remarkably, in situ XRD and SEM show an abrupt release of the carbon impurities during annealing at moderate temperatures in different atmospheres. In vacuo XPS measurements reveal the remaining species on the as-deposited surface after every exposure. Links are established between the particular surface termination prior to the precursor pulse and the observed differences in GPC, highlighting hydrogen as the key growth facilitator and carbon and oxygen as growth inhibitors. The increase in GPC with temperature for ALD sequences with H2* or NH3* prior to the precursor pulse is explained by an increase in the amount of hydrogen species that reside on the Pd surface which are available for reaction with the Pd(hfac)2 precursor.

Atomic and molecular layer deposition: off the beaten track

ALD archetype and deviations from it.

Toward atomically-precise synthesis of supported bimetallic nanoparticles using atomic layer deposition

Multi-metallic nanoparticles constitute a new class of materials offering the opportunity to tune the properties via the composition, atomic ordering and size. In particular, supported bimetallic nanoparticles have generated intense interest in catalysis and electrocatalysis. However, traditional synthesis methods often lack precise control, yielding a mixture of monometallic and bimetallic particles with various compositions. Here we report a general strategy for synthesizing supported bimetallic nanoparticles by atomic layer deposition, where monometallic nanoparticle formation is avoided by selectively growing the secondary metal on the primary metal nanoparticle but not on the support; meanwhile, the size, composition and structure of the bimetallic nanoparticles are precisely controlled by tailoring the precursor pulse sequence. Such exquisite control is clearly demonstrated through in situ Fourier transform infrared spectroscopy of CO chemisorption by mapping the gradual atomic-scale evolution in the surface composition, and further confirmed using aberration-corrected scanning transmission electron microscopy.

Nano/subnanometer Pd nanoparticles on oxide supports synthesized by AB-type and low-temperature ABC-type atomic layer deposition: growth and morphology

The synthesis of uniformly dispersed nano/subnanometer Pd nanoparticles on oxide supports with atomic layer deposition (ALD) has been studied in terms of growth and morphology. In situ quartz crystal microbalance (QCM) measurements showed that AB-type Pd ALD grew more favorably on TiO(2) than on Al(2)O(3) at 200 °C by the sequential exposure of Pd(II) hexafluoroacetylacetonate (Pd(hfac)(2)) and formalin. The growth rate of AB-type Pd ALD decreased on the Al(2)O(3) surface at a lower deposition temperature, and there was negligible growth at 110 °C. However, a new ABC-type Pd ALD, which we developed recently, operates at significantly lower temperature by growing both protected Pd nanoparticles and the support simultaneously. Additionally, these two types of Pd ALD demonstrated very different growth behaviors. Scanning transmission electron microscopy (STEM) studies showed that the size of the Pd nanoparticles could be well controlled by varying AB-type Pd ALD cycles at 200 °C, and low-temperature ABC-type Pd ALD provides a novel way to synthesize highly uniform, ultrafine, supported Pd nanoparticles directly on high-surface-area supports, regardless of loading. Both types of Pd ALD indicate that ALD is a promising technique for synthesizing advanced catalysts with precise control.

Metallization of a thiol-terminated organic surface using chemical vapor deposition

The deposition and the subsequent decomposition of an organometallic precursor, (eta (3)-allyl)(eta (5)-cyclopentadienyl)palladium [Cp(allyl)Pd], on an organic surface exposed by self-assembled monolayers (SAM) was studied using X-ray photoelectron spectroscopy (XPS) and infrared reflection absorption spectroscopy (IRRAS). The interfacial chemical reactions of the vapor-deposited metal precursor with the pendant thiol group of the SAMs made from oligophenyldithiols, which are either prepared directly (terphenyldimethyldithiol, TPDMT) or by a deprotection route from SAMs formed by a monoacylated derivative of biphenyldimethyldithiol (dep. BPDMAc-1) have been studied in detail. When the TPDMT-SAMs were exposed to Cp(allyl)Pd vapor, a Pd (2+)/allyl-terminated SAM surface was obtained (to a lower extent this was also the case for dep. BPDMAc-1 SAMs), which was stable against exposure to H 2 gas. Reduction to Pd (0) by H 2 was only observed when small amounts of Pd (0) were already present, for example, after prolonged exposure to the precursor. The catalytic activity of the small Pd (0) particles also caused a decomposition of the SAMs upon exposure to air.