High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors

Thermal atomic layer deposition of Er2O3 films from a volatile, thermally stable enaminolate precursor

Thin films of Er2O3 films were grown by atomic layer deposition using the Er precursor tris(1-(dimethylamino)-3,3-dimethylbut-1-en-2-olate)erbium(III) (Er(L1)3), with water as the co-reactant. Saturative, self-limited growth was observed at a substrate temperature of 200 °C for pulse lengths of ≥4.0 s for Er(L1)3 and ≥0.2 s for water. An ALD window was observed from 175 to 225 °C with a growth rate of about 0.25 Å per cycle. Er2O3 films grown at 200 °C on Si(100) and SiO2 substrates with a thickness of 33 nm had root mean square surface roughnesses of 1.75 and 0.75 nm, respectively. Grazing incidence X-ray diffraction patterns showed that the films were composed of polycrystalline Er2O3 at all deposition temperatures on Si(100) and SiO2 substrates. X-ray photoelectron spectroscopy revealed stoichiometric Er2O3, with carbon and nitrogen levels below the detection limits after argon ion sputtering to remove surface impurities. Transmission electron microscopy studies of Er2O3 film growth in nanoscale trenches (aspect ratio = 10) demonstrated conformal coverage.

Selective Growth of Interface Layers from Reactions of Sc(MeCp)2(Me2pz) with Oxide Substrates

The transformation of an oxide substrate by its reaction with a chemical precursor during atomic layer deposition (ALD) has not attracted much attention, as films are typically deposited on top of the oxide substrate. However, any modification to the substrate surface can impact the electrical and optical properties of the device. We demonstrate herein the ability of a precursor to react deep within an oxide substrate to form an interfacial layer that is distinct from both the substrate and deposited film. This phenomenon is studied using a scandium precursor, Sc(MeCp)₂(Me₂pz) (1, MeCp = methylcyclopentadienyl, Me₂pz = 3,5-dimethylpyrazolate), and five oxide substrates (SiO₂, ZnO, Al₂O₃, TiO₂, and HfO₂). In situ Fourier transform infrared (FTIR) spectroscopy shows that at moderate temperatures (∼150 °C) the pyrazolate group of 1 reacts with the surface hydroxyl groups of OH-terminated SiO₂ substrates. However, at slightly higher temperatures (≥225 °C) typically used for the ALD of Sc₂O₃, there is a direct reaction between 1 and the SiO₂ layer, in addition to chemisorption at the surface hydroxyl groups. This reaction is sustained by sequential exposures of 1 until an ∼2 nm thick passivating interface layer is formed, indicating that 1 reacts with oxygen derived from SiO₂. A shift of the Si 2p core level position, measured by ex situ X-ray photoelectron spectroscopy, is consistent with the formation of a ScSi _xO _y layer. Similar observations are made following the exposure of a ZnO substrate to 1 at 275 °C. In contrast, Al₂O₃, TiO₂, and HfO₂ substrates remain resistant to reaction with 1 under similar conditions, except for a surface reaction occurring in the case of TiO₂. These striking observations are attributed to the differences in the electrochemical potentials of the elements comprising the oxide substrates to that of scandium. Precursor 1 can react with SiO₂ or ZnO substrates, since the constituent elements of these oxides have less-negative electrochemical potentials than do aluminum, titanium, and hafnium. Additionally, Sc₂O₃ and surface carbonates are deposited on all substrates by gas-phase reactions between 1 and residual water vapor in the reactor. The extent of gas-phase reactions contributing to film growth is governed by the relative pressure of water vapor in the presence of 1. These results suggest caution when using very reactive, oxophilic precursors such as 1 to avoid misinterpreting unconventional film deposition as that resulting from a standard ALD process.

A modular reactor design for in situ synchrotron x-ray investigation of atomic layer deposition processes

Synchrotron characterization techniques provide some of the most powerful tools for the study of film structure and chemistry. The brilliance and tunability of the Advanced Photon Source allow access to scattering and spectroscopic techniques unavailable with in-house laboratory setups and provide the opportunity to probe various atomic layer deposition (ALD) processes in situ starting at the very first deposition cycle. Here, we present the design and implementation of a portable ALD instrument which possesses a modular reactor scheme that enables simple experimental switchover between various beamlines and characterization techniques. As first examples, we present in situ results for (1) X-ray surface scattering and reflectivity measurements of epitaxial ZnO ALD on sapphire, (2) grazing-incidence small angle scattering of MnO nucleation on silicon, and (3) grazing-incidence X-ray absorption spectroscopy of nucleation-regime Er2O3 ALD on amorphous ALD alumina and single crystalline sapphire.

Photofragmentation of Gas-Phase Lanthanide Cyclopentadienyl Complexes: Experimental and Time-Dependent Excited-State Molecular Dynamics

Unimolecular gas-phase laser-photodissociation reaction mechanisms of open-shell lanthanide cyclopentadienyl complexes, Ln(Cp)₃ and Ln(TMCp)₃, are analyzed from experimental and computational perspectives. The most probable pathways for the photoreactions are inferred from photoionization time-of-flight mass spectrometry (PI-TOF-MS), which provides the sequence of reaction intermediates and the distribution of final products. Time-dependent excited-state molecular dynamics (TDESMD) calculations provide insight into the electronic mechanisms for the individual steps of the laser-driven photoreactions for Ln(Cp)₃. Computational analysis correctly predicts several key reaction products as well as the observed branching between two reaction pathways: (1) ligand ejection and (2) ligand cracking. Simulations support our previous assertion that both reaction pathways are initiated via a ligand-to-metal charge-transfer (LMCT) process. For the more complex chemistry of the tetramethylcyclopentadienyl complexes Ln(TMCp)₃, TMESMD is less tractable, but computational geometry optimization reveals the structures of intermediates deduced from PI-TOF-MS, including several classic “tuck-in” structures and products of Cp ring expansion. The results have important implications for metal–organic catalysis and laser-assisted metal–organic chemical vapor deposition (LCVD) of insulators with high dielectric constants.

Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

Ln2O3 thin films with optically active f-electrons (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) have been grown on Si(100) and soda lime glass substrates by atomic layer deposition (ALD) using Ln(thd)3 (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione) and ozone as precursors. The temperature range for depositions was 200-400 °C. Growth rates were measured by spectroscopic ellipsometry and a region with a constant growth rate (ALD window) was found for Ln = Ho and Tm. All the compounds are grown as amorphous films at low temperatures, whereas crystalline films (cubic C-Ln2O3) are obtained above a certain temperature ranging from 300 to 250 °C for Nd2O3 to Yb2O3, respectively. AFM studies show that the films were smooth (rms < 1 nm) except for depositions at the highest temperatures. The refractive index was measured by spectroscopic ellipsometry and was found to depend on the deposition temperature. Optical absorption measurements show that the absorption from the f-f transitions depends strongly on the crystallinity of the material. The clear correlation between the degree of crystallinity, optical absorptions and refractive indices is discussed.

Homoleptic gadolinium amidinates as precursors for MOCVD of oriented gadolinium nitride (GdN) thin films

Five new homoleptic gadolinium tris-amidinate complexes are reported, which were synthesized via the salt-elimination reaction of GdCl(3) with 3 equiv of lithiated symmetric and asymmetric amidinates at ambient temperature. The Gd-tris-amidinates [Gd{(N(i)Pr)(2)CR}(3)] [R = Me (1), Et (2), (t)Bu (3), (n)Bu (4)] and [Gd{(NEt)(N(t)Bu)CMe}(3)] (5) are solids at room temperature and sublime at temperatures of about 125 °C (6 × 10(-2) mbar) with the exception of compound 4, which is a viscous liquid at room temperature. According to X-ray diffraction analysis of 3 and 5 as representative examples of the series, the complexes adopt a distorted octahedral structure in the solid state. Mass spectrometric (MS) data confirmed the monomeric structure in the gas phase, and high-resolution MS allowed the identification of characteristic fragments, such as [{(N(i)Pr)(2)CR}GdCH(3)](+) and [{(N(i)Pr)(2)CR}GdNH](+). The alkyl substitution patterns of the amidinate ligands clearly show an influence on the thermal properties, and specifically, the introduction of the asymmetric carbodiimide leads to a lowering of the onset of volatilization and decomposition. Compound 5, which is the first Gd complex with an asymmetric amidinate ligand system to be reported, was, therefore, tested for the MOCVD of GdN thin films. The as-deposited GdN films were capped with Cu in a subsequent MOCVD process to prevent postdeposition oxidation of the films. Cubic GdN on Si(100) substrates with a preferred orientation in the (200) direction were grown at 750 °C under an ammonia atmosphere and exhibited a columnar morphology and low levels of C or O impurities according to scanning electron microscopy, Rutherford backscattering, and nuclear reaction analysis.

Precursors for MOCVD and ALD of Rare Earth Oxides−Complexes of the Early Lanthanides with a Donor-Functionalized Alkoxide Ligand

Complexes of the early lanthanides with the donor-functionalized alkoxide ligand mmp (Hmmp = HOCMe(2)CH(2)OMe, 1-methoxy-2-methylpropan-2-ol) are excellent precursors for Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) of lanthanide oxides; however, their coordination chemistry, which is the subject of this paper, is rather complex. Precursors for MOCVD and ALD of lanthanide oxides are prepared by the reaction of [Ln{N(SiMe(3))(2)}(3)] with 3 equiv of the alcohol Hmmp in toluene in the presence of 1 equiv of tetraglyme and are indefinitely stable in solution. Reaction of [Ln{N(SiMe(3))(2)}(3)] with 3 equiv of Hmmp in the absence of stabilizing Lewis bases gives complex condensed products with empirical formula [{Ln(mmp)(3-n)}(2)O(n)]. These condensed products show poor volatility and are unsatisfactory precursors for MOCVD or ALD of oxides. The cluster complex [La(3)(mu(3),kappa(2)-mmp)(2)(mu(2),kappa(2)-mmp)(3)(mmp)(4)] has been prepared by careful reaction of [La{N(SiMe(3))(2)}(3)] with 4 equiv of Hmmp and has been characterized by single-crystal X-ray diffraction. Salt metathesis reactions using M(mmp) (M = Li or Na) are unreliable routes to [Ln(mmp)(3)]. Crystals of the heterometallic cluster complex [NaLa(3)(mu(3)-OH)(mu(3),kappa(2)-mmp)(2)(mu(2),kappa(2)-mmp)(4)(mmp)(3)] were isolated from the reaction of [La(NO(3))(3)(tetraglyme)] with 3 equiv of Na(mmp), and crystals of [Li(kappa(2)-Hmmp)Pr(mu(2),eta(2)-mmp)(4))LiCl] were isolated from the reaction of PrCl(3) with 3 equiv of Li(mmp); both of these complexes have been characterized by single-crystal X-ray diffraction.