Yan P, Qin D, An YK, Li GZ, Xing J, Liu JJ. In situ synthesis and characterization of GaN nanorods through thermal decomposition of pre-grown GaN films.
NANOTECHNOLOGY 2008;
19:025605. [PMID:
21817547 DOI:
10.1088/0957-4484/19/02/025605]
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Abstract
Herein we describe a thermal treatment route to synthesize gallium nitride (GaN) nanorods. In this method, GaN nanorods were synthesized by thermal treatment of GaN films at a temperature of 800 °C. The morphology and structure of GaN nanorods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that GaN nanorods have a hexagonal wurtzite structure with diameters ranging from 30 to 50 nm. Additionally, GaN nanoplates are also founded in the products. The growth process of GaN nanostructures was investigated and a thermal decomposition mechanism was proposed. Our method provides a cost-effective route to fabricate GaN nanorods, which will benefit the fabrication of one-dimensional nanomaterials and device applications.
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