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Jia Y, Wang H, Wang Y, Wang C, Li X, Kubo T, Liu Y, Zhang X, Segawa H. Ultra-Thin SnO x Buffer Layer Enables High-Efficiency Quantum Junction Photovoltaics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204725. [PMID: 36285698 PMCID: PMC9799018 DOI: 10.1002/advs.202204725] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/28/2022] [Revised: 09/19/2022] [Indexed: 06/16/2023]
Abstract
Solution-processed solar cells are promising for the cost-effective, high-throughput production of photovoltaic devices. Colloidal quantum dots (CQDs) are attractive candidate materials for efficient, solution-processed solar cells, potentially realizing the broad-spectrum light utilization and multi-exciton generation effect for the future efficiency breakthrough of solar cells. The emerging quantum junction solar cells (QJSCs), constructed by n- and p-type CQDs only, open novel avenue for all-quantum-dot photovoltaics with a simplified device configuration and convenient processing technology. However, the development of high-efficiency QJSCs still faces the challenge of back carrier diffusion induced by the huge carrier density drop at the interface of CQDs and conductive glass substrate. Herein, an ultra-thin atomic layer deposited tin oxide (SnOx ) layer is employed to buffer this carrier density drop, significantly reducing the interfacial recombination and capacitance caused by the back carrier diffusion. The SnOx -modified QJSC achieves a record-high efficiency of 11.55% and a suppressed hysteresis factor of 0.04 in contrast with reference QJSC with an efficiency of 10.4% and hysteresis factor of 0.48. This work clarifies the critical effect of interfacial issues on the carrier recombination and hysteresis of QJSCs, and provides an effective pathway to design high-performance all-quantum-dot devices.
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Affiliation(s)
- Yuwen Jia
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Haibin Wang
- Graduate School of Arts and SciencesThe University of TokyoTokyo153–8902Japan
| | - Yinglin Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Chao Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Xiaofei Li
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Takaya Kubo
- Research Center for Advanced Science and TechnologyThe University of TokyoTokyo153–8904Japan
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Xintong Zhang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Hiroshi Segawa
- Graduate School of Arts and SciencesThe University of TokyoTokyo153–8902Japan
- Research Center for Advanced Science and TechnologyThe University of TokyoTokyo153–8904Japan
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Sukharevska N, Bederak D, Goossens VM, Momand J, Duim H, Dirin DN, Kovalenko MV, Kooi BJ, Loi MA. Scalable PbS Quantum Dot Solar Cell Production by Blade Coating from Stable Inks. ACS APPLIED MATERIALS & INTERFACES 2021; 13:5195-5207. [PMID: 33470785 PMCID: PMC7863069 DOI: 10.1021/acsami.0c18204] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2020] [Accepted: 01/08/2021] [Indexed: 05/05/2023]
Abstract
The recent development of phase transfer ligand exchange methods for PbS quantum dots (QD) has enhanced the performance of quantum dots solar cells and greatly simplified the complexity of film deposition. However, the dispersions of PbS QDs (inks) used for film fabrication often suffer from colloidal instability, which hinders large-scale solar cell production. In addition, the wasteful spin-coating method is still the main technique for the deposition of QD layer in solar cells. Here, we report a strategy for scalable solar cell fabrication from highly stable PbS QD inks. By dispersing PbS QDs capped with CH3NH3PbI3 in 2,6-difluoropyridine (DFP), we obtained inks that are colloidally stable for more than 3 months. Furthermore, we demonstrated that DFP yields stable dispersions even of large diameter PbS QDs, which are of great practical relevance owing to the extended coverage of the near-infrared region. The optimization of blade-coating deposition of DFP-based inks enabled the fabrication of PbS QD solar cells with power conversion efficiencies of up to 8.7%. It is important to underline that this performance is commensurate with the devices made by spin coating of inks with the same ligands. A good shelf life-time of these inks manifests itself in the comparatively high photovoltaic efficiency of 5.8% obtained with inks stored for more than 120 days.
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Affiliation(s)
- Nataliia Sukharevska
- Zernike
Institute for Advanced Materials, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Dmytro Bederak
- Zernike
Institute for Advanced Materials, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Vincent M. Goossens
- Zernike
Institute for Advanced Materials, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Jamo Momand
- Zernike
Institute for Advanced Materials, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Herman Duim
- Zernike
Institute for Advanced Materials, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Dmitry N. Dirin
- Department
of Chemistry and Applied Biosciences, ETH
Zurich, Vladimir Prelog
Weg 1, Zurich 8093, Switzerland
- EMPA-Swiss
Federal Laboratories for Materials Science and Technology, Uberlandstr. 129, Dubendorf 8600, Switzerland
| | - Maksym V. Kovalenko
- Department
of Chemistry and Applied Biosciences, ETH
Zurich, Vladimir Prelog
Weg 1, Zurich 8093, Switzerland
- EMPA-Swiss
Federal Laboratories for Materials Science and Technology, Uberlandstr. 129, Dubendorf 8600, Switzerland
| | - Bart J. Kooi
- Zernike
Institute for Advanced Materials, Nijenborgh 4, Groningen 9747 AG, The Netherlands
| | - Maria A. Loi
- Zernike
Institute for Advanced Materials, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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