Arene and functionalized arene based two dimensional organic-inorganic hybrid perovskites for photovoltaic applications

Point defect-mediated hot carrier relaxation dynamics of lead-free FASnI3 perovskites

In search of a promising optoelectronic performance, we herein investigated the hot carrier relaxation dynamics of a lead-free cubic phased bulk formamidinium tin triiodide (FASnI3) perovskite. To gain detailed theoretical insights, we should estimate the carrier relaxation dynamics of this pristine perovskite. To control the dynamics, point defects like central tin (Sn), iodine(I) anions, and formamidinium (FA) cations were introduced. With the iodine vacancy in the FASnI3 perovskite, the system seems to be unstable at room temperature, whereas the other three types of FASnI3 perovskites (pristine, Sn vacancy, and FA vacancy) are significantly stable at 300 K having semiconducting nature and excellent optical absorption in the UV-visible range. The computed electron-hole recombination time for the pristine system is 3.9 nanoseconds, which is in good agreement with the experimental investigation. The exciton relaxation processes in Sn and FA vacancy perovskites require 2.8 and 4.8 nanoseconds, respectively. These variations in the hot carrier relaxation dynamics processes are caused by the generation of significant changes in non-adiabatic coupling between energy levels, electron-phonon coupling, and quantum decoherence in different point defect analogous systems. The results presented here offer deeper insight into the temperature-dependent carrier relaxation dynamics of FASnI3 perovskites and thus open up opportunities for future exploration of their optoelectronic properties.

Fluorination and Conjugation Engineering Synergistically Enhance the Optoelectronic Properties of Two-Dimensional Hybrid Organic-Inorganic Perovskites

Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) are expected to be a viable alternative to three-dimensional (3D) analogs in solar cells (SCs) and optoelectronic devices due to their high stability, diverse composition, and physical properties. However, unsuitable band alignment and large bandgaps limit the power conversion efficiency (PCE) improvement of SCs based on 2D HOIPs. Here, we report a molecular design strategy that combines fluorination and conjugation engineering to tune the electronic structure and optimize the PCE of 2D HOIPs. Our results show that type IIa band alignment and tunable bandgaps can be achieved in 2D Dion-Jacobson (DJ) HOIPs by H/F substitution of organic cations with different degrees of conjugation. In general, the bandgap of 2D DJ-HOIPs decreases monotonously with the increase of the number of F atoms, which is due to the gradual decrease of the lowest unoccupied molecular orbitals (LUMO) of organic cations. In addition, the enhanced interlayer charge transfer and higher dielectric constant suggest that the fluorination-induced dielectric limitations are weakened. The estimated PCE of 2D DJ-HOIPs is exponentially increased and positively correlated with the degree of conjugation and fluorination of organic cations, with a PCE approaching 29% under their synergistic effect. Our results not only provide promising candidates for photovoltaic device applications but also provide an effective method for PCE optimization.

How the Stacking Pattern Influences the Charge Transfer Dynamics of van der Waals Heterostructures: An Answer from a Time-Domain Ab Initio Study

Here, we perform a time domain density functional study in conjunction with a non-adiabatic molecular dynamics (NAMD) simulation to investigate the charge carrier dynamics in a series of van der Waals heterostructures made of two-dimensional (2D) SnX2 (X = S or Se)-supported ZrS2, ZrSe2, and ZrSSe monolayers. Results from NAMD simulation reveal delayed electron-hole recombination (in the range of 0.53-2.13 ns) and ultrafast electron/hole transfer processes (electron transfer within 108.3-321.5 fs and hole transfer between 107.6 and 258.8 fs). The most interesting finding of our study is that switching from AB to AA stacking in the heterostructures extends the carrier lifespan by a significant amount. The delayed electron-hole recombination because of the switching stacking pattern can be rationalized by weak electron-phonon coupling, lower non-adiabatic coupling (NAC), and fast decoherence time. Thus, these insightful NAMD studies of excited charge carriers reveal that the stacking pattern variation is an effective tool to develop efficient photovoltaic devices based on 2D van der Waals heterostructures.

Ultrafast Charge Transfer and Delayed Recombination in Graphitic-CN/WTe2 van der Waals Heterostructure: A Time Domain Ab Initio Study

In search of an efficient solar energy harvester, we herein performed a time domain density functional study coupled with nonadiabatic molecular dynamics (NAMD) simulation to gain atomistic insight into the charge carrier dynamics of a graphitic carbon nitride (g-CN)-tungsten telluride (WTe₂) van der Waals heterostructure. Our NAMD study predicted ultrafast electron (589 fs) and hole-transfer (807 fs) dynamics in g-CN/WTe₂ heterostructure and a delayed electron-hole recombination process (2.404 ns) as compared to that of the individual g-CN (3 ps) and WTe₂ (0.55 ps) monolayer. The ultrafast charge transfer is due to strong electron-phonon coupling during the charge-transfer process while comparatively weak electron-phonon coupling, sufficient band gap, comparatively lower nonadiabatic coupling (NAC), and fast decoherence time slow down the electron-hole recombination process. The NAMD results of exciton relaxation dynamics are valuable for insightful understanding of charge carrier dynamics and in designing photovoltaic devices based on organic-inorganic 2D van der Waals heterostructures.