High-temperature kinetics of some Si- and Cl-containing ceramic precursors

Theoretical Reassessment and Model Validation of Some Kinetic Parameters Relevant to Si/Cl/H Systems

The increasing demand for silicon-based materials requires the optimization of silicon deposit manufacturing processes and therefore a better understanding of the gas-phase reactivity of silicon precursors such as silicon tetrachloride (SiCl₄). In the present work, hydrogen atom resonance absorption spectroscopy (H-ARAS) has been used to investigate the high-temperature reactivity of SiCl₄ behind reflected shock waves at ∼1.5 atm in the presence of either ethyl iodide or molecular hydrogen, used as H atom precursors. Several key reactions of SiCl₄ and its main gas-phase decomposition products (SiCl₃, Cl, SiHCl₃, SiHCl₂) have been determined theoretically. The structures and vibrational frequencies of reactants, products, and tight transition states were determined at the B2PLYP-D3/aug-cc-pVTZ level and final single-point energies refined from extrapolated RCCSD(T)/aug-cc-pVnZ (n = D, T, and Q) calculations. The minimum-energy paths of barrierless reactions were calculated at the NEVPT2 level. Final rate constants were then derived from the transition-state theory (TST) and the variational TST/master equation analysis within the rigid rotor harmonic oscillation framework. A kinetic mechanism was assembled, based on the present ab initio calculations, to successfully model and interpret the experimental absorption profiles. Sensitivity analysis unambiguously highlighted the need to account for pressure dependence in the SiCl₄ decomposition (SiCl₄ ⇄ SiCl₃ + Cl) while discarding previous theoretical and experimental determinations of this rate constant.

Shock-tube study of the decomposition of tetramethylsilane using gas chromatography and high-repetition-rate time-of-flight mass spectrometry

The decomposition of tetramethylsilane was studied in shock-tube experiments in a temperature range of 1270–1580 K and pressures ranging from 1.5 to 2.3 bar behind reflected shock waves combining GC/MS and HRR-TOF-MS.

Reaction of chlorine atom with trichlorosilane from 296 to 473 K

The reaction of trichlorosilane (HSiCl(3)) with atomic chlorine (Cl) has been investigated by using infrared kinetic spectroscopy of the HCl product. The overall second order rate constant for the reaction has been determined as a function of temperature by using pseudo-first-order kinetic methods. Formation of HCl (nu=0) was monitored on the (nu=1<--0) R(2) line at 2944.914 cm(-1) and that of HCl (nu=1) on the (nu=2<--1) R(2) line at 2839.148 cm(-1). The overall second order rate constant was determined to be (2.8+/-0.1)x10(-11) cm(3) molecule(-1) s(-1) at 296 K. The rate constant shows no pressure dependence and decreases slightly with increased temperature [k=(2.3+/-0.2)x10(-11)e((66+/-3)/T) cm(3) molecule(-1) s(-1)]. Substantial vibrational excitation is measured in the HCl product, with the fraction of HCl (nu=1)/HCl (total)=0.41+/-0.08. These observations are consistent with the reaction being a barrierless hydrogen abstraction reaction. The experimental results are supported by ab initio quantum chemical calculations that show the transition state for abstraction to lie below the energy of the reactants, in disagreement with previously published calculations.

Ultraviolet photochemistry of trichlorovinylsilane and allyltrichlorosilane: vinyl radical (HCCH2) and allyl radical (H2CCHCH2) production in 193 nm photolysis

The absolute gas phase ultraviolet absorption spectra of trichlorovinylsilane and allyltrichlorosilane have been measured from 191 to 220 nm. Over this region the absorption spectra of both species are broad and relatively featureless, and their cross sections increase with decreasing wavelength. The electronic transitions of trichlorovinylsilane were calculated by ab initio quantum chemical methods and the observed absorption bands assigned to the A(1)A''<-- X[combining tilde](1)A'' transition. The maximum absorption cross section in the region, at 191 nm, is sigma = (8.50 +/- 0.06) x 10(-18) cm(2) for trichlorovinylsilane and sigma = (2.10 +/- 0.02) x 10(-17) cm(2) for allyltrichlorosilane. The vinyl radical and the allyl radical are formed promptly from the 193 nm photolysis of their respective trichlorosilane precursors. By comparison of the transient visible absorption and the 1315 nm I atom absorption from 266 nm photolysis of vinyl iodide and allyl iodide, the absorption cross sections at 404 nm of vinyl radical ((2.9 +/- 0.4) x 10(-19) cm(2)) and allyl radical ((3.6 +/- 0.8) x 10(-19) cm(2)) were derived. These cross sections are in significant disagreement with literature values derived from kinetic modeling of allyl or vinyl radical self-reactions. Using these cross sections, the vinyl radical yield from trichlorovinylsilane was determined to be phi = (0.9 +/- 0.2) per 193 nm photon absorbed, and the allyl radical yield from allyltrichlorosilane phi = (0.7 +/- 0.2) per 193 nm photon absorbed.