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Fan J, Han C, Yang G, Song B, Xu R, Xiang C, Zhang T, Qian L. Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312948. [PMID: 38813832 DOI: 10.1002/adma.202312948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 04/05/2024] [Indexed: 05/31/2024]
Abstract
Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.
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Affiliation(s)
- Junpeng Fan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Changfeng Han
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Guojian Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Bin Song
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Materials Science and Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Rui Xu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham Ningbo China, Ningbo, 315100, P. R. China
| | - Chaoyu Xiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Ting Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Lei Qian
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
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Lee Y, Jung S, Yun JS. Electrospinning and Partial Etching Behaviors of Core-Shell Nanofibers Directly Electrospun on Mesh Substrates for Application in a Cover-Free Compact Air Filter. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1152. [PMID: 38998757 PMCID: PMC11243679 DOI: 10.3390/nano14131152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Revised: 07/01/2024] [Accepted: 07/01/2024] [Indexed: 07/14/2024]
Abstract
The exposure of workers to propylene glycol monomethyl ether acetate (PGMEA) in manufacturing environments can result in potential health risks. Therefore, systems for PGMEA removal are required for indoor air quality control. In this study, core-shell zeolite socony mobil-5 (ZSM-5)/polyvinylpyrrolidone-polyvinylidene fluoride nanofibers were directly electrospun and partially wet-etched on a mesh substrate to develop a cover-free compact PGMEA air filter. The electrospinning behaviors of the core-shell nanofibers were investigated to optimize the electrospinning time and humidity and to enable the manufacture of thin and light air-filter layers. The partial wet etching of the nanofibers was undertaken using different etching solvents and times to ensure the exposure of the active sites of ZSM-5. The performances of the ZSM-5/PVDF nanofiber air filters were assessed by measuring five consecutive PGMEA adsorption-desorption cycles at different desorption temperatures. The synthesized material remained stable upon repeated adsorption-desorption cycles and could be regenerated at a low desorption temperature (80 °C), demonstrating a consistent adsorption performance upon prolonged adsorption-desorption cycling and low energy consumption during regeneration. The results of this study provide new insights into the design of industrial air filters using functional ceramic/polymer nanofibers and the application of these filters.
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Affiliation(s)
| | | | - Ji Sun Yun
- New Growth Materials Division, Korea Institute of Ceramic Engineering and Technology, 101 Soho-ro, Jinju 52851, Republic of Korea; (Y.L.); (S.J.)
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Park SY, Lee S, Yang J, Kang MS. Patterning Quantum Dots via Photolithography: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300546. [PMID: 36892995 DOI: 10.1002/adma.202300546] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/28/2023] [Indexed: 06/18/2023]
Abstract
Pixelating patterns of red, green, and blue quantum dots (QDs) is a critical challenge for realizing high-end displays with bright and vivid images for virtual, augmented, and mixed reality. Since QDs must be processed from a solution, their patterning process is completely different from the conventional techniques used in the organic light-emitting diode and liquid crystal display industries. Although innovative QD patterning technologies are being developed, photopatterning based on the light-induced chemical conversion of QD films is considered one of the most promising methods for forming micrometer-scale QD patterns that satisfy the precision and fidelity required for commercialization. Moreover, the practical impact will be significant as it directly exploits mature photolithography technologies and facilities that are widely available in the semiconductor industry. This article reviews recent progress in the effort to form QD patterns via photolithography. The review begins with a general description of the photolithography process. Subsequently, different types of photolithographical methods applicable to QD patterning are introduced, followed by recent achievements using these methods in forming high-resolution QD patterns. The paper also discusses prospects for future research directions.
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Affiliation(s)
- Se Young Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Seongjae Lee
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
- Institute of Emergent Materials, Sogang University, Seoul, 04107, South Korea
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Lin Q, Zhu Y, Wang Y, Li D, Zhao Y, Liu Y, Li F, Huang W. Flexible Quantum Dot Light-Emitting Device for Emerging Multifunctional and Smart Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210385. [PMID: 36880739 DOI: 10.1002/adma.202210385] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Revised: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications.
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Affiliation(s)
- Qinghong Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yangbin Zhu
- School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, P. R. China
| | - Yue Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Deli Li
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yi Zhao
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yang Liu
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Wei Huang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
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Morinaga M, Iwaki T, Tanaka H, Lagzi I, Nakanishi H. Patterning Perovskite Quantum Dots Using Photopolymerization. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17152-17162. [PMID: 36811865 DOI: 10.1021/acsami.2c23162] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
All-inorganic cesium lead halide perovskite quantum dots (QDs) have several potential applications, owing to their unique optical and electronic properties. However, patterning perovskite QDs using conventional methods is difficult because of the ionic nature of QDs. Here, we demonstrate a unique approach, in which perovskite QDs are patterned in polymer films through the photocuring of monomers under patterned light illumination. The pattern illumination creates the transient polymer concentration difference, which drives the QDs to form patterns; hence controlling polymerization kinetics is essential for the generation of the QD pattern. For the patterning mechanism, a light projection system equipped with a digital micromirror device (DMD) is developed; thus, light intensity, an important factor to determine polymerization kinetics, is precisely controlled per position on the photocurable solution, resulting in the understanding of the mechanism and the formation of distinct QD patterns. The demonstrated approach assisted by the DMD-equipped projection system can form desired perovskite QD patterns solely by patterned light illumination, paving the way for the development of patterning methods for perovskite QDs and other nanocrystals.
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Affiliation(s)
- Mamoru Morinaga
- Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585, Japan
| | - Takuto Iwaki
- Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585, Japan
| | - Hayato Tanaka
- Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585, Japan
| | - István Lagzi
- ELKH-BME Condensed Matter Research Group, Budapest University of Technology and Economics, Budapest 1111, Hungary
- Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest 1111, Hungary
| | - Hideyuki Nakanishi
- Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585, Japan
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Huang YY, Li ZH, Lai YC, Chen JC, Wu SH, Yang S, Kuo Y, Yang CC, Hsu TC, Lee CL. Nanoscale-cavity enhancement of color conversion with colloidal quantum dots embedded in the surface nano-holes of a blue-emitting light-emitting diode. OPTICS EXPRESS 2022; 30:31322-31335. [PMID: 36242217 DOI: 10.1364/oe.463214] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 08/01/2022] [Indexed: 06/16/2023]
Abstract
Although the method of inserting colloidal quantum dots (QDs) into deep nano-holes fabricated on the top surface of a light-emitting diode (LED) has been widely used for producing effective Förster resonance energy transfer (FRET) from the LED quantum wells (QWs) into the QDs to enhance the color conversion efficiency, an important mechanism for enhancing energy transfer in such an LED structure was overlooked. This mechanism, namely, the nanoscale-cavity effect, represents a near-field Purcell effect and plays a crucially important role in enhancing the color conversion efficiency. Here, we demonstrate the results of LED performance, time-resolved photoluminescence (TRPL), and numerical simulation to elucidate the nanoscale-cavity effect on color conversion by inserting a photoresist solution of red-emitting QDs into the nano-holes fabricated on a blue-emitting QW LED. Based on the TRPL study of the inserted QDs in a nano-hole structure fabricated on an un-doped GaN template of no QW, it is found that the emission efficiency of the inserted QDs is significantly increased due to the nanoscale-cavity effect. From the simulation study, it is confirmed that this effect can also increase the FRET efficiency, particularly for those radiating dipoles in the QWs oriented perpendicular to the sidewalls of the nano-holes. In the nanoscale-cavity effect, the enhanced near field distribution inside a nano-hole excited by a light emitter modifies its own radiation behavior through the Purcell effect such that its far-field emission becomes stronger.
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Yang J, Yoo J, Yu WS, Choi MK. Polymer-Assisted High-Resolution Printing Techniques for Colloidal Quantum Dots. Macromol Res 2021. [DOI: 10.1007/s13233-021-9055-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
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Han Y, Jang J, Cha E, Lee J, Chung H, Jeong M, Kim TG, Chae BG, Kim HG, Jun S, Hwang S, Lee E, Ye JC. Deep learning STEM-EDX tomography of nanocrystals. NAT MACH INTELL 2021. [DOI: 10.1038/s42256-020-00289-5] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
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Lee S. Design Principle of Reactive Components for Dimethacrylate‐Terminated Quantum Dots: Preserved Photoluminescent Quantum Yield, Excellent Pattern Uniformity, and Suppression of Aggregation in the Matrix. MACROMOL CHEM PHYS 2020. [DOI: 10.1002/macp.201900488] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Seonwoo Lee
- Department of Electrical and Computer EngineeringInter‐university Semiconductor Research CenterSeoul National University 1 Gwanakro, Gwanak‐gu Seoul 08826 Republic of Korea
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Kim YH, Koh S, Lee H, Kang SM, Lee DC, Bae BS. Photo-Patternable Quantum Dots/Siloxane Composite with Long-Term Stability for Quantum Dot Color Filters. ACS APPLIED MATERIALS & INTERFACES 2020; 12:3961-3968. [PMID: 31876144 DOI: 10.1021/acsami.9b19586] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Incorporation of quantum dots (QDs) into color filters (CFs) are desired for less energy loss and wider viewing angle compared to a conventional display. However, aggregation and vulnerability to heat, moisture, and chemicals in the photo-patternable matrix are critical issues of the QD-CFs with high QDs concentration. Herein, we fabricated red (10 wt %) and green (20 wt %) QD-CFs using photolithography of QD/siloxane ink containing secondary thiol monomer. Ligand-exchanged QDs were chemically incorporated in methacrylate oligosiloxane resin. QD/siloxane composite showed superior stability under harsh heat and moisture (85 °C/5% RH and 85 °C/85% RH) conditions and chemicals (EtOH, HCl, and NaOH) compared to conventional QD/PR (commercial negative photoresist). QD-CFs (10 μm thick) effectively converted blue light emitted from LED chip into red and green light, and the obtained white PL through QD-CF showed wide color gamut, which was 108% relative to NTSC. From these advantages, QD/siloxane composite will be beneficial as color-conversion photoresists are to be used as color filters in liquid crystal displays, micro light-emitting diodes, and organic light-emitting diodes.
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Suh YH, Shin DW, Chun YT. Micro-to-nanometer patterning of solution-based materials for electronics and optoelectronics. RSC Adv 2019; 9:38085-38104. [PMID: 35541771 PMCID: PMC9075859 DOI: 10.1039/c9ra07514c] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2019] [Accepted: 11/12/2019] [Indexed: 12/03/2022] Open
Abstract
Technologies for micro-to-nanometer patterns of solution-based materials (SBMs) contribute to a wide range of practical applications in the fields of electronics and optoelectronics. Here, state-of-the-art micro-to-nanometer scale patterning technologies of SBMs are disseminated. The utilisation of patterning for a wide-range of SBMs leads to a high level of control over conventional solution-based film fabrication processes that are not easily accessible for the control and fabrication of ordered micro-to-nanometer patterns. In this review, various patterning procedures of SBMs, including modified photolithography, direct-contact patterning, and inkjet printing, are briefly introduced with several strategies for reducing their pattern size to enhance the electronic and optoelectronic properties of SBMs explained. We then conclude with comments on future research directions in the field.
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Affiliation(s)
- Yo-Han Suh
- Electrical Engineering Division, Department of Engineering, University of Cambridge 9 JJ Thomson Avenue Cambridge CB3 0FA UK
| | - Dong-Wook Shin
- Electrical Engineering Division, Department of Engineering, University of Cambridge 9 JJ Thomson Avenue Cambridge CB3 0FA UK
| | - Young Tea Chun
- Electrical Engineering Division, Department of Engineering, University of Cambridge 9 JJ Thomson Avenue Cambridge CB3 0FA UK
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Li X, Kundaliya D, Tan ZJ, Anc M, Fang NX. Projection lithography patterned high-resolution quantum dots/thiol-ene photo-polymer pixels for color down conversion. OPTICS EXPRESS 2019; 27:30864-30874. [PMID: 31684329 DOI: 10.1364/oe.27.030864] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2019] [Accepted: 09/19/2019] [Indexed: 06/10/2023]
Abstract
Pixelated color converters are envisioned to achieve full-color high-resolution display through down conversion of blue/ultraviolet(UV) micro-LEDs. Quantum dots (QDs) are promising narrow-band converters of high quantum efficiency and brightness enabling saturated colors with wide color gamut in displays. Here we demonstrate high-resolution pixelated red and green QDs/thiol-ene photo-polymer converters (single pixel down to 6 µm; converters array of 21 µm pixel, 30 µm pitch and sub 10 µm thickness) patterned through projection lithography. QDs capped with amine surface group are uniformly dispersed in thiol-ene photo-polymer matrix at high concentrations (up to 100 mg/mL), which reduces aggregation and improves conversion efficiency by 0.5-1 times compared to drop-cast QDs. Color cross-talk is also reduced through patterning light blocking walls between converter pixels.
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Lin S, Tan G, Yu J, Chen E, Weng Y, Zhou X, Xu S, Ye Y, Yan QF, Guo T. Multi-primary-color quantum-dot down-converting films for display applications. OPTICS EXPRESS 2019; 27:28480-28493. [PMID: 31684599 DOI: 10.1364/oe.27.028480] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2019] [Accepted: 09/08/2019] [Indexed: 06/10/2023]
Abstract
We propose and fabricate a multi-primary-color (MPC) quantum-dot down-converting film (QDDCF). A four-primary-color QDDCF composed of red (R), yellowish green (YG), bluish green (BG), and blue (B) subpixels was fabricated via totally five rounds of photolithographic processes. A verification platform was built up using a laser projector, and the measured results show that the QD film can expand display color gamut to 118.60% of Rec. 2020 and can cover the entire Pointer's gamut. The issues of blue light absorption and film thickness are analyzed in detail. The combination of MPC technology and QDDCF is a potential strategy to realize ultra wide color gamut for emerging display technologies.
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