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Li J, Fan F, Fu X, Liu M, Chen Y, Zhang B. Building Uniformly Structured Polymer Memristors via a 2D Conjugation Strategy for Neuromorphic Computing. Macromol Rapid Commun 2024:e2400172. [PMID: 38627960 DOI: 10.1002/marc.202400172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 04/15/2024] [Indexed: 04/23/2024]
Abstract
Polymer memristors represent a highly promising avenue for the advancement of next-generation computing systems. However, the intrinsic structural heterogeneity characteristic of most polymers often results in organic polymer memristors displaying erratic resistive switching phenomena, which in turn lead to diminished production yields and compromised reliability. In this study, a 2D conjugated polymer, named PBDTT-BPQTPA, is synthesized by integrating the coplanar bis(thiophene)-4,8-dihydrobenzo[1,2-b:4,5-b]dithiophene (BDTT) as an electron-donating unit with a quinoxaline derivative serving as an electron-accepting unit. The incorporation of triphenylamine groups at the quinoxaline termini significantly enhances the polymer's conjugation and planarity, thereby facilitating more efficient charge transport. The fabricated polymer memristor with the structure of Al/PBDTT-BPQTPA/ITO exhibits typical non-volatile resistive switching behavior under high voltage conditions, along with history-dependent memristive properties at lower voltages. The unique memristive behavior of the device enables the simulation of synaptic enhancement/inhibition, learning algorithms, and memory operations. Additionally, the memristor demonstrates its capability for executing logical operations and handling decimal calculations. This study offers a promising and innovative approach for the development of artificial neuromorphic computing systems.
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Affiliation(s)
- Jinyong Li
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Fei Fan
- Shanghai Key Laboratory of Crime Scene Evidence, Shanghai Research Institute of Criminal Science and Technology, Shanghai, 200083, China
| | - Xin Fu
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Mingxing Liu
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Yu Chen
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Bin Zhang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China
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2
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Shu F, Chen X, Yu Z, Gao P, Liu G. Metal-Organic Frameworks-Based Memristors: Materials, Devices, and Applications. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27248888. [PMID: 36558025 PMCID: PMC9788367 DOI: 10.3390/molecules27248888] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 12/09/2022] [Accepted: 12/11/2022] [Indexed: 12/23/2022]
Abstract
Facing the explosive growth of data, a number of new micro-nano devices with simple structure, low power consumption, and size scalability have emerged in recent years, such as neuromorphic computing based on memristor. The selection of resistive switching layer materials is extremely important for fabricating of high performance memristors. As an organic-inorganic hybrid material, metal-organic frameworks (MOFs) have the advantages of both inorganic and organic materials, which makes the memristors using it as a resistive switching layer show the characteristics of fast erasing speed, outstanding cycling stability, conspicuous mechanical flexibility, good biocompatibility, etc. Herein, the recent advances of MOFs-based memristors in materials, devices, and applications are summarized, especially the potential applications of MOFs-based memristors in data storage and neuromorphic computing. There also are discussions and analyses of the challenges of the current research to provide valuable insights for the development of MOFs-based memristors.
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Affiliation(s)
- Fan Shu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xinhui Chen
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- College of Information Engineering, Jinhua Polytechnic, Jinhua 321017, China
| | - Zhe Yu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (Z.Y.); (P.G.); (G.L.)
| | - Pingqi Gao
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (Z.Y.); (P.G.); (G.L.)
| | - Gang Liu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- Correspondence: (Z.Y.); (P.G.); (G.L.)
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Ashton MD, Cooper PA, Municoy S, Desimone MF, Cheneler D, Shnyder SD, Hardy JG. Controlled Bioactive Delivery Using Degradable Electroactive Polymers. Biomacromolecules 2022; 23:3031-3040. [PMID: 35748772 PMCID: PMC9277582 DOI: 10.1021/acs.biomac.2c00516] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
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Biomaterials capable
of precisely controlling the delivery of agrochemicals/biologics/drugs/fragrances
have significant markets in the agriscience/healthcare industries.
Here, we report the development of degradable electroactive polymers
and their application for the controlled delivery of a clinically
relevant drug (the anti-inflammatory dexamethasone phosphate, DMP).
Electroactive copolymers composed of blocks of polycaprolactone (PCL)
and naturally occurring electroactive pyrrole oligomers (e.g., bilirubin,
biliverdin, and hemin) were prepared and solution-processed to produce
films (optionally doped with DMP). A combination of in silico/in vitro/in
vivo studies demonstrated the cytocompatibility of the polymers. The
release of DMP in response to the application of an electrical stimulus
was observed to be enhanced by ca. 10–30% relative to the passive
release from nonstimulated samples in vitro. Such stimuli-responsive
biomaterials have the potential for integration devices capable of
delivering a variety of molecules for technical/medical applications.
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Affiliation(s)
- Mark D Ashton
- Department of Chemistry, Faculty of Science and Technology, Lancaster University, Bailrigg, Lancaster LA1 4YB, U.K
| | - Patricia A Cooper
- Institute of Cancer Therapeutics, School of Pharmacy and Medical Sciences, Faculty of Life Sciences, University of Bradford, Bradford BD7 1DP, U.K
| | - Sofia Municoy
- Instituto de Química y Metabolismo del Fármaco (IQUIMEFA), Facultad de Farmacia y Bioquímica, Consejo Nacional de Investigaciones, Científicas y Técnicas (CONICET), Universidad de Buenos Aires, Junín 956, Piso 3° (1113), Buenos Aires 1113, Argentina
| | - Martin F Desimone
- Instituto de Química y Metabolismo del Fármaco (IQUIMEFA), Facultad de Farmacia y Bioquímica, Consejo Nacional de Investigaciones, Científicas y Técnicas (CONICET), Universidad de Buenos Aires, Junín 956, Piso 3° (1113), Buenos Aires 1113, Argentina
| | - David Cheneler
- Department of Engineering, Faculty of Science and Technology, Lancaster University, Bailrigg, Lancaster LA1 4YW, U.K.,Materials Science Institute, Lancaster University, Bailrigg, Lancaster LA1 4YB, U.K
| | - Steven D Shnyder
- Institute of Cancer Therapeutics, School of Pharmacy and Medical Sciences, Faculty of Life Sciences, University of Bradford, Bradford BD7 1DP, U.K
| | - John G Hardy
- Department of Chemistry, Faculty of Science and Technology, Lancaster University, Bailrigg, Lancaster LA1 4YB, U.K.,Materials Science Institute, Lancaster University, Bailrigg, Lancaster LA1 4YB, U.K
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Wagner J, Song Y, Lee T, Katz HE. The combined influence of polythiophene side chains and electrolyte anions on organic electrochemical transistors. ELECTROCHEMICAL SCIENCE ADVANCES 2021. [DOI: 10.1002/elsa.202100165] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023] Open
Affiliation(s)
- Justine Wagner
- Department of Materials Science and Engineering Johns Hopkins University Baltimore Maryland USA
| | - Yunjia Song
- Department of Materials Science and Engineering Johns Hopkins University Baltimore Maryland USA
| | - Taein Lee
- Department of Materials Science and Engineering Johns Hopkins University Baltimore Maryland USA
| | - Howard E. Katz
- Department of Materials Science and Engineering Johns Hopkins University Baltimore Maryland USA
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Yang JM, Jung YK, Lee JH, Kim YC, Kim SY, Seo S, Park DA, Kim JH, Jeong SY, Han IT, Park JH, Walsh A, Park NG. Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption. NANOSCALE HORIZONS 2021; 6:987-997. [PMID: 34668915 DOI: 10.1039/d1nh00452b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexible and transparent artificial synapses with extremely low energy consumption have potential for use in brain-like neuromorphic electronics. However, most of the transparent materials for flexible memristive artificial synapses were reported to show picojoule-scale high energy consumption with kiloohm-scale low resistance, which limits the scalability for parallel operation. Here, we report on a flexible memristive artificial synapse based on Cs3Cu2I5 with energy consumption as low as 10.48 aJ (= 10.48 × 10-18 J) μm-2 and resistance as high as 243 MΩ for writing pulses. Interface-type resistive switching at the Schottky junction between p-type Cu3Cs2I5 and Au is verified, where migration of iodide vacancies and asymmetric carrier transport owing to the effective hole mass is three times heavier than effective electron mass are found to play critical roles in controlling the conductance, leading to high resistance. There was little difference in synaptic weight updates with high linearity and 250 states before and after bending the flexible device. Moreover, the MNIST-based recognition rate of over 90% is maintained upon bending, indicative of a promising candidate for highly efficient flexible artificial synapses.
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Affiliation(s)
- June-Mo Yang
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Young-Kwang Jung
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
| | - Ju-Hee Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Yong Churl Kim
- Samsung Advanced Institute of Technology (SAIT), Suwon 443-803, Korea
| | - So-Yeon Kim
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Dong-Am Park
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Jeong-Hyeon Kim
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Se-Yong Jeong
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - In-Taek Han
- Samsung Advanced Institute of Technology (SAIT), Suwon 443-803, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Aron Walsh
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
- Department of Materials, Imperial College London, London SW7 2AZ, UK
| | - Nam-Gyu Park
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
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Wang L, Wang Y, Wen D. Tunable biological nonvolatile multilevel data storage devices. Phys Chem Chem Phys 2021; 23:24834-24841. [PMID: 34719695 DOI: 10.1039/d1cp04622e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The speed with which electronic products are updated is continuously increasing. Consequently, since waste electronic products can cause serious environmental pollution, the demand for electronic products made of biological materials is becoming increasingly urgent. Although biological memristors have significant advantages, their electrical characteristics still do not meet the requirements to be used in future nonvolatile memories. Therefore, how to control their electrical characteristics has become a popular topic of research. In this study, tunable biomemristors with an Al/tussah blood (TB)-carbon nanotube (CNT)/indium tin oxide (ITO)/glass structure were fabricated. Such a device exhibits stable bipolar resistance switching behavior and good retention characteristics (104 s). Experimental results show that the ON/OFF current ratio can be effectively controlled by modifying the CNT concentration in the TB-CNT composite film. Multilevel (8 levels, 3 bits per cell) storage capabilities can be achieved in the device by controlling its compliance current in order to achieve high-density storage. The resistance switching behavior originates from the formation and rupture of conductive oxygen vacancy filaments. TB is a promising natural biomaterial in the field of green electronics, and this research could blaze a new trail for the development of biological memory devices. Biomemristors with multilevel resistance states can be used as electronic synapses and are one of the choices for simulating biological synapses.
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Affiliation(s)
- Lu Wang
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| | - Yuting Wang
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
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Krishnan K, Tauquir SM, Vijayaraghavan S, Mohan R. Configurable switching behavior in polymer-based resistive memories by adopting unique electrode/electrolyte arrangement. RSC Adv 2021; 11:23400-23408. [PMID: 35479807 PMCID: PMC9036540 DOI: 10.1039/d1ra03561d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Accepted: 06/25/2021] [Indexed: 12/21/2022] Open
Abstract
The difference in resistive switching characteristics by modifying the device configuration provides a unique operating principle, which is essential for both fundamental studies and the development of future memory devices. Here, we demonstrate the poly(methyl methacrylate) (PMMA)-based resistive switching characteristics using four different combinations of electrode/electrolyte arrangement in the device geometry. From the current-voltage (I-V) measurements, all the PMMA-based devices revealed nonvolatile memory behavior with a higher ON/OFF resistance ratio (∼105-107). Significantly, the current conduction in the filament and resistive switching behavior depend majorly on the presence of Al electrode and electrochemically active silver (Ag) element in the PMMA matrix. A trap-controlled space charge limited conduction (SCLC) mechanism constitutes the resistive switching in the Al/PMMA/Al device, whereas the current conduction governed by ohmic behavior influences the resistive switching in the Ag-including devices. The depth-profiling X-ray photoelectron spectroscopy (XPS) study evidences the conducting filament formation processes in the PMMA-based devices. These results with different conduction mechanisms provide further insights into the understanding of the resistive switching behavior in the polymer-based devices by simply rearranging the device configuration.
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Affiliation(s)
- Karthik Krishnan
- Corrosion and Material Protection Division, CSIR-Central Electrochemical Research Institute (CECRI) Karaikudi TN 630-003 India
| | - Shaikh Mohammad Tauquir
- Corrosion and Material Protection Division, CSIR-Central Electrochemical Research Institute (CECRI) Karaikudi TN 630-003 India
| | - Saranyan Vijayaraghavan
- Corrosion and Material Protection Division, CSIR-Central Electrochemical Research Institute (CECRI) Karaikudi TN 630-003 India
| | - Ramesh Mohan
- Microsystem Packaging Group, CSIR-Central Electronics Engineering Research Institute Pilani Rajasthan-333031 India
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Conjugated polymers for functional applications. POLYM INT 2021. [DOI: 10.1002/pi.6191] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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