Prediction and Interpretability Study of the Glass Transition Temperature of Polyimide Based on Machine Learning with Quantitative Structure-Property Relationship (Tg-QSPR)

The glass transition temperature (Tg) is a crucial characteristic of polyimides (PIs). Developing a Tg predictive model using machine learning methodologies can facilitate the design of PI structures and expedite the development process. In this investigation, a data set comprising 1257 PIs was assembled, with Tg values determined using differential scanning calorimetry. 210 molecular descriptors were computed using RDKit, and subsequently, six distinct feature selection methodologies were employed to refine the descriptor set. Quantitative structure-property relationship models targeting Tg (Tg-QSPR) were then constructed using five ensemble learning algorithms and one deep learning algorithm. These models exhibited high predictive accuracy and robustness, with the CATBoost model demonstrating the highest accuracy, achieving a coefficient of determination of 0.823 for the test set, a mean absolute error of 20.1 °C, and a root-mean-square error of 29.0 °C. The study identified the NumRotatableBonds descriptor as particularly influential on Tg, showing a negative correlation with the property. Additionally, the model's accuracy was validated using ten new PI films not included in the original data set, resulting in absolute errors ranging from 2.5 to 26.9 °C and absolute percentage error rates of 1.0-12.8%. These findings underscore the importance of utilizing extensive and diverse data sets for predictive modeling to enhance accuracy and stability. Furthermore, exploring the interpretability of the model and experimentally validating newly synthesized PIs have augmented the practical utility of the model. Under the guidance of the Tg-QSPR models, it will be possible to accelerate the performance prediction and structural design of PIs in the future.

A Novel Diamine Containing Ester and Diphenylethane Groups for Colorless Polyimide with a Low Dielectric Constant and Low Water Absorption

In this study, a novel diamine monomer containing ester and phenyl moieties, 1,2-diphenylethane-1,2-diyl bis(4-aminobenzoate) (1,2-DPEDBA), was synthesized through a three-step reaction. Using this diamine, a novel polyimide (PI) film was prepared with 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (6-FDA) as a counter dianhydride through a typical two-step chemical imidization. For comparison, poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA-ODA PI) was also synthesized via thermal imidization. The resulting 6-FDA-DPEDBA PI film was not only soluble in common polar solvents with high boiling points, such as N,N-dimethylacetamide (DMAc) and N,N-dimethylformamide (DMF), but also soluble in common low-boiling-point polar solvents, such as chloroform (CHCl₃) and dichloromethane (CH₂Cl₂), at room temperature. The resulting novel PI showed a 5% weight loss temperature (T⁵_d) at 360 °C under a nitrogen atmosphere. The resulting PI film was colorless and transparent with a transmittance of 87.1% in the visible light region ranging from 400 to 760 nm. The water absorption of the novel PI film was of 1.78%. The PI film also possessed a good moisture barrier and hydrophobicity. Furthermore, the resulting PI film displayed a low dielectric constant of 2.17 at 10⁶ Hz at room temperature. In conclusion, the novel PI film exhibited much better optical transparency, lower moisture absorption, and a lower dielectric constant as well as better solubility than the PMDA-ODA PI film, which is insoluble in any solvent, although its thermal stability is not better than that of PMDA-ODA PI.

Thermal degradation kinetics of transparent fluorinated poly(imide siloxane) copolymers

Fluorinated polyimide films are widely used in the field of flexible display because of their excellent optical transmittance. Based on previous studies, the adhesion to other substrates of fluorinated polyimide films have been improved by incorporating GAPD into the macromolecular chains, but their heat resistance is not yet very clear. In this study, thermal behaviors of fluorinated polyimide films (PIs) with and without GAPD were studied in N2 ambient and atmosphere by TG-DTG analysis under non-isothermal conditions. Activation energies (Eas) of PIs were calculated by Flynn-Wall-Ozawa method, Kissinger-Akahira-Sunose method and Kissinger method. In addition, mechanisms of thermal decomposition reaction were determined by Coats-Redfern method. By comparison, the Eas of PIs in the same atmosphere were similar and the thermal reaction mechanisms were essentially the same, indicating that adhesion of fluorinated polyimide can be improved by adding appropriate amount of GAPD, while the excellent optical permeability and heat resistance of fluorinated polyimide can be maintained, further expanding its application in flexible display and other fields.

Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS₂) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS₂ atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS₂ atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS₂ FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS₂ device structures. The photoluminescence (PL) of MoS₂ atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS₂ transistors. The review discusses the overall recent progress made in developing MoS₂ based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.

Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics

Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm²/V s, V_th < 1 V, SS < 1 V/decade, on/off ratio ≈ 10⁶) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for flexible electronics. Amorphous oxide-based transparent electronic devices are attractive to meet emerging technological demands where crystalline oxide-/silicon-based architectures cannot provide a solution. Here, we tackle this problem by using a novel amorphous oxide semiconducting material-namely, indium tungsten oxide (IWO)-as the active channel in flexible TFTs (FTFTs). Post-annealing temperature as low as 270 °C for amorphous IWO thin films deposited by radio frequency sputtering at room temperature could result in smooth morphology ( R_rms ≈ 0.42 nm), good adhesion, and high carrier density ( n ≈ 7.19 × 10¹⁸ cm^-3). Excellent TFT characteristics of flexible devices could be achieved with linear field effect mobility μ_FE ≈ 25.86 cm²/V s, subthreshold swing SS ≈ 0.30 V/decade, threshold voltage V_th ≈ -1.5 V, and on/off ratio I_on/ I_off ≈ 5.6 × 10⁵ at 3 V and stable operation during bending of the FTFT. Additionally, IWO TFTs were implemented as synapses, the building block for neuromorphic computing. Paired-pulse facilitation up to 138% was observed and showed an exponential decay resembling chemical synapses. Utilizing this characteristic, a high-pass dynamic temporal filter was devised providing increased gain from 1.55 to 21 when frequency was raised from 22 to 62 Hz. The high performance and stability of flexible TFTs obtained with IWO films demonstrate their promise for low-voltage electronic applications.

Computational approaches for investigating interfacial adhesion phenomena of polyimide on silica glass

This manuscript provides a comprehensive study of adhesion behavior and its governing mechanisms when polyimide undergoes various modes of detachment from silica glass. Within the framework of steered molecular dynamics, we develop three different adhesion measurement techniques: pulling, peeling, and sliding. Such computational methodologies can be applied to investigate heterogeneous materials with differing interfacial adhesion modes. Here, a novel hybrid potential involving a combination of the INTERFACE force field in conjunction with ReaxFF and including Coulombic and Lennard-Jones interactions is employed to study such interfaces. The studies indicate that the pulling test requires the largest force and the shortest distance to detachment as the interfacial area is separated instantaneously, while the peeling test is observed to exhibit the largest distance for detachment because it separates via line-by-line adhesion. Two kinds of polyimides, aromatic and aliphatic type, are considered to demonstrate the rigidity dependent adhesion properties. The aromatic polyimide, which is more rigid due to the stronger charge transfer complex between chains, requires a greater force but a smaller distance at detachment than the aliphatic polyimide for all of the three methodologies.

Synthesis, Characterization and Thermal Properties of Poly(ethylene oxide), PEO, Polymacromonomers via Anionic and Ring Opening Metathesis Polymerization

Branched polymers are a valuable class of polymeric materials. In the present study, anionic polymerization techniques were employed for the synthesis of low molecular weight poly(ethylene oxide) (PEO) macromonomers bearing norbornenyl end groups. The macromonomers were characterized by SEC, MALDI-TOF and NMR spectroscopy. Subsequent ring opening metathesis polymerization (ROMP) of the macromonomers using ruthenium catalysts (Grubbs catalysts of the 1st, 2nd and 3rd generations) afforded the corresponding polymacromonomers. The effects of the macromonomer molecular weight, the type of the catalyst, the nature of the solvent, the monomer concentration and the polymerization temperature on the molecular characteristics of the branched polymers were examined in detail. The crystallization behavior of the macromonomers and the corresponding polymacromonomers were studied by Differential Scanning Calorimetry (DSC). The thermal stability and the kinetics of the thermal decomposition of the samples were also studied by Thermogravimetric Analysis (TGA). The activation energies of the thermal decomposition were analyzed using the Ozawa–Flynn–Wall and Kissinger methodologies.

High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm²V⁻¹s⁻¹. The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.

Optically transparent high temperature shape memory polymers

Optically transparent shape memory polymers (SMPs) have potential in advanced optoelectronic and other common shape memory applications, and here optically transparent shape memory polyimide is reported for the first time. The polyimide possesses a glass transition temperature (Tg) of 171 °C, higher than the Tg of other transparent SMPs reported, and the influence of molecular structure on Tg is discussed. The 120 μm thick polyimide film exhibits transmittance higher than 81% in 450-800 nm, and the possible mechanism of its high transparency is analyzed, which will benefit further research on other transparent high temperature SMPs. The transparent polyimide showed excellent thermomechanical properties and shape memory performances, and retained high optical transparency after many shape memory cycles.

Novel soluble poly(ether imide)s with trifluoromethyl and chloride pendant groups for optical materials

A series of novel PEIs (4a–4e) with ether linkages and bulk side groups in the backbone have been successfully synthesized. It was very interesting that they also had excellent optical properties.

Flexible polyimide films hybrid with functionalized boron nitride and graphene oxide simultaneously to improve thermal conduction and dimensional stability

Coupling agent-functionalized boron nitride (f-BN) and glycidyl methacrylate-grafted graphene (g-TrG) are simultaneously blended with polyimide (PI) to fabricate a flexible, electrically insulating and thermally conductive PI composite film. The silk-like g-TrG successfully fills in the gap between PI and f-BN to complete the thermal conduction network. In addition, the strong interaction between surface functional groups on f-BN and g-TrG contributes to the effective phonon transfer in the PI matrix. The thermal conductivity (TC) of the PI/f-BN composite films containing additional 1 wt % of g-TrG is at least doubled to the value of PI/f-BN and as high as 16 times to that of the pure PI. The hybrid film PI/f-BN-50/g-TrG-1 exhibits excellent flexibility, sufficient insulating property, the highest TC of 2.11 W/mK, and ultralow coefficient of thermal expansion of 11 ppm/K, which are perfect conditions for future flexible substrate materials requiring efficient heat dissipation.