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Zheng C, Tong T, Hu Y, Gu Y, Wu H, Wu D, Meng H, Yi M, Ma J, Gao D, Huang W. Charge-Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800756. [PMID: 29806210 DOI: 10.1002/smll.201800756] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2018] [Revised: 04/02/2018] [Indexed: 06/08/2023]
Abstract
Here, charge-storage nonvolatile organic field-effect transistor (OFET) memory devices based on interfacial self-assembled molecules are proposed. The functional molecules contain various aromatic amino moieties (N-phenyl-N-pyridyl amino- (PyPN), N-phenyl amino- (PN), and N,N-diphenyl amino- (DPN)) which are linked by a propyl chain to a triethoxysilyl anchor group and act as the interface modifiers and the charge-storage elements. The PyPN-containing pentacene-based memory device (denoted as PyPN device) presents the memory window of 48.43 V, while PN and DPN devices show the memory windows of 24.88 and 8.34 V, respectively. The memory characteristic of the PyPN device can remain stable along with 150 continuous write-read-erase-read cycles. The morphology analysis confirms that three interfacial layers show aggregation due to the N atomic self-catalysis and hydrogen bonding effects. The large aggregate-covered PyPN layer has the full contact area with the pentacene molecules, leading to the high memory performance. In addition, the energy level matching between PyPN molecules and pentacene creates the smallest tunneling barrier and facilitates the injection of the hole carriers from pentacene to the PyPN layer. The experimental memory characteristics are well in agreement with the computational calculation.
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Affiliation(s)
- Chaoyue Zheng
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Tong Tong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Yueming Hu
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu, 210003, P. R. China
| | - Yuming Gu
- Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, No.163 Xianlin Road, Nanjing, Jiangsu, 210023, P. R. China
| | - Huarui Wu
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Dequn Wu
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu, 210003, P. R. China
| | - Hong Meng
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Mingdong Yi
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu, 210003, P. R. China
| | - Jing Ma
- Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, No.163 Xianlin Road, Nanjing, Jiangsu, 210023, P. R. China
| | - Deqing Gao
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Wei Huang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
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