Nonvolatile resistive memory devices based on ferrocene-terminated hyperbranched polyimide derived from different dianhydrides

Effect of a "Zn Bridge" on the Consecutively Tunable Retention Characteristics of Volatile Random Access Memory Materials

Polyimide memory materials with a donor-acceptor structure based on a charge-transfer mechanism exhibit great potential for next-generation information storage technology due to their outstanding high-temperature resistance and good dimensional and chemical stability. Precisely controlling memory performance by limited chemical decoration is one of core challenges in this field. Most reported work mainly focuses on designing novel and elaborate electron donors or acceptors for the expected memory behavior of polyimides; this takes a lot of time and is not always efficacious. Herein, we report a series of porphyrinated copolyimides coPI-Znx (x=5, 10, 20, 50, 80), where x represents the mole percentage of Zn ion in the central core of the porphyrin. Experimental and theoretical analysis indicate that the Zn ion could play a vital bridge role in promoting the formation and stabilization of a charge-transfer complex by enhancing the hybridization of local and charge transfer (HLCT) excitations of porphyrinated polyimides, endowing coPI-Znx with volatile random access memory performance and continuously tunable retention time. This work could provide one simple strategy to precisely regulate memory performance merely by altering the metal content in porphyrinated polyimides.

Redox gated polymer memristive processing memory unit

Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore’s Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. In particular, the integration of multifunctionalities into a single memristor promises an essential strategy of obtaining a high-performance electronic device that satisfies the nowadays increasing demands of data storage and processing. In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. By introducing redox active moieties of triphenylamine and ferrocene onto the pendants of fluorene skeletons, the conjugated polymer exhibits triple oxidation behavior and interesting memristive switching characteristics. Associated with the unique electrochemical and electrical behavior, the polymer device is capable of executing multilevel memory, decimal arithmetic operations of addition, subtraction, multiplication and division, as well as simple Boolean logic operations.

Though designing conductive polymers for memory devices is attractive for future low-cost flexible electronics, a proof-of-concept device has yet to be realized. Here, the authors report a redox-gated polymer memristive processing unit with programmable multilevel storage and logic functionalities.

Ferrocene-based hyperbranched poly(phenyltriazolylcarboxylate)s: synthesis by phenylpropiolate-azide polycycloaddition and use as precursors to nanostructured magnetoceramics

Ferrocene-based hb-PPTCs with redox activity are readily prepared by the catalyst-free phenylpropiolate-azide polycycloaddition. They could be used as precursors to produce nanostructured magnetoceramics upon pyrolysis.