Singh B, Shabat MM, Schaadt DM. Large photocurrent density enhancement assisted by non-absorbing spherical dielectric nanoparticles in a GaAs layer.
Sci Rep 2020;
10:17107. [PMID:
33051531 PMCID:
PMC7555857 DOI:
10.1038/s41598-020-74186-7]
[Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2020] [Accepted: 09/25/2020] [Indexed: 11/10/2022] Open
Abstract
Herein, we report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO2) nanoparticles-based antireflection coating. The nanoparticles are embedded in a dielectric matrix (SiN) which improves the antireflection property of SiN (\documentclass[12pt]{minimal}
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\begin{document}$$\lambda /4$$\end{document}λ/4 coating) and let to pass more photons into the GaAs layer. The improvement is noticed omnidirectional and the highest is more than 100% at 85° angle of incidence with the nanoparticles’ surface filling density of 70%. Sunrise to sunset calculation of normalized photocurrent density over the course of a year have also shown improvements in the nanoparticles’ case.
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