Electrochemical pore etching in Ge

Macroporous Semiconductors

Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

Long germanium nanowires prepared by electrochemical etching

Germanium (Ge) nanowires have been produced by electrochemical etching of single-crystalline n-type Ge [100] in a HCl-containing aqueous electrolyte. Macropores could be etched at various etching currents after an optimized procedure for homogeneous pore nucleation was used. Because of the narrow band gap of Ge (0.66 eV), the leakage current through pore walls is much higher than that, for example, in Si, leading to a constant dissolution of the pore walls. At sufficiently high current densities, it is then possible to form nanowires with diameters determined by the width of the space charge region, ranging from roughly 50 to 500 nm, and a length of several hundred micrometers. The role of the space charge region for stabilizing pore formation and in the formation of nanowires will be discussed.